Renesas Electronics Corporation

Mitsubishi Electric Corporation

Nec Corporation

Kabushiki Kaisha Toshiba

Kabushiki Kaisha Topcon

Tokyo Kogaku Kikai Kabushiki Kaisha

Global Nuclear Fuel-japan Co., Ltd.

Akira Tanabe

Yoshihiro Hayashi

Kenichiro Hijioka

Yasutaka Nakashiba

Masayuki Furumiya

Yoji Tsutsumishita

Kazuaki Ando

Munehiro Murata

Hidetoshi Ikeda

Daisuke Goto

Taichiro Tamida

Kazuya Uejima

Yoshitomo Hayashi

Masayuki Uematsu

Kosuke Tsujikawa

Kiyoshi Takeuchi

Akihiro Yamanaka

Tetsuya Tanabe

Naoya Inoue

Hiroyuki Sekiguchi

Makoto Ueda

Shiro Kamohara

Kotaro Nagaoka

Kenzo Manabe

Kei Terada

Shinichi Furutani

Masanori Ozaki

Yoshihiro Marushita

Tadashi Narabayashi

Ritsuo Yoshioka

Toshihiro Azuma

Kenjiro Katsuragi

Masahiko Yoshida

Hiroshi Miyano

Koichi Sakurada

Hiroyoshi Takeuchi

Osamu Ozaki

Noriyasu Hasegawa

Yuki Kohara

Shouichi Watanabe

Yoshihisa Uchiumi

Kazuyuki Enomoto

Yasutaka Nakahsiba

Takao Kageyama

Yuji Iwamoto

Yasuhiro Masuhara

Takanori Fukahori

Akira Mototani

Jun Uehara

Kazuya Okuyama

Wataru Mizumachi

Akio Shioiri

Hiroshi Tonegawa

Takenori Ishiyama

Qiangsong Shao

Wells formed in a semiconductor device can be discharged faster in a transition from a stand-by state to an active state. The semiconductor device includes an n-type well applied, in an active state, with a power supply voltage and, in a stand-by state, with a voltage higher than the power supply voltage, a p-type well applied, in the active state, with a ground voltage and, in the stand-by state, with a voltage lower than the ground voltage, and a path which, in a transition from the stand-by state to the active state, electrically couples the n-type well and the p-type well.

Semiconductor device

A microcomputer performs a power supply operation to a wireless communication module at a first time interval set based on a power generation amount at a lowest day power generation amount of a temperature differential power generation module. In addition, the microcomputer performs the power supply operation to a sensor at a second time interval set based on the power generation amount at the lowest day power generation amount of the temperature differential power generation module.

IoT edge module

An electronic system device comprises a power generation device generating a power supply voltage, a substrate bias generation circuit connected to the power generation device, a memory circuit, a monitor circuit, and a capacitor connected to the substrate bias generation circuit via a switch. The substrate bias generation circuit generates a substrate bias voltage from the power supply voltage and supplies charges based on the substrate bias voltage to the capacitor while the switch is ON-state. While the switch is OFF-state, the capacitor stores the accumulated charges based on the substrate bias voltage. While the switch is ON-state, the substrate bias generation circuit adds based on the substrate bias voltage to charge that was held, and states the back bias voltage. The substrate bias generation circuit supplies the back bias voltage to memory circuit.

Electronic system device and method of starting the same

An insulation detector for highly accurately detecting or measuring, with a simple configuration, insulation resistance of a load or an apparatus to a ground or a housing and connected to an electric apparatus including one or both of an intra-apparatus capacitor and a battery, the insulation detector including an intra-insulation detector capacitor, a voltage detecting unit that detects a voltage of the intra-insulation detector capacitor, and a current-path forming switch for connecting the ground or the housing, the intra-apparatus capacitor, and the intra-insulation detector capacitor in series and forming a current path including insulation resistance of the electric apparatus. The insulation detector measures the insulation resistance by measuring a time constant of a change in the voltage of the intra-insulation detector capacitor. A capacitance value of the intra-insulation detector capacitor is a value negligible in the measurement of the insulation resistance compared with a capacitance value of the intra-apparatus capacitor.

Insulation detector and electric apparatus

A numerical control device includes: an estimation unit to estimate an accumulation amount of swarf to be produced when a tool mounted on a machine tool cuts a workpiece on the basis of a machining condition in cutting the workpiece by the tool and a value of current to be applied to a motor for moving a shaft of the machine tool when the tool cuts the workpiece. The numerical control device further includes a correction unit to correct the accumulation amount of swarf estimated by the estimation unit on the basis of a machining mode specifying a shape of swarf to be produced when the tool cuts the workpiece.

Numerical control device

A motor control apparatus is an apparatus that controls a motor that drives a machine apparatus that moves a subject to be moved, and includes a resolution conversion unit that converts, on the basis of a ratio of resolution of a first detector that detects a position of an object and resolution of a second detector that detects a position of the object, a detection signal that indicates the position of the object that is detected by the second detector to a signal of the resolution of the first detector. The motor control apparatus further includes a current control unit that controls a voltage to be applied to the motor on the basis of a command signal that specifies a destination position of the subject to be moved and the signal obtained by the conversion performed by the resolution conversion unit on the detection signal.

Motor control apparatus

A magnetic pole position detection device of a motor control device includes a calculation unit to estimate a magnetic pole position. The calculation unit generates a voltage pulse command for three-phase connection to actuate all of three legs included in an inverter, and a voltage pulse command for one phase opened to actuate only two of the three legs, and narrows down the estimation range on the basis of a first magnetic pole position estimated value estimated on the basis of a motor current that flows during application of the voltage pulse command for three-phase connection, and a second magnetic pole position estimated value estimated on the basis of a motor current that flows during application of the voltage pulse command for one phase opened.

Magnetic pole position detection device and motor control device

Related-art back bias generation circuits cause a problem where a long time is required for transition between an operating state and a standby state because driving power is lowered to reduce the power consumption in the standby state. A back bias generation circuit outputs a predetermined voltage. The predetermined voltage is the back bias voltage of a substrate in a standby mode. A bias control circuit stores an electrical charge while a circuit block is in an operating mode, supplies the stored electrical charge to the substrate of a MOSFET included in the circuit block when the circuit block transitions from the operating mode to the standby mode, and subsequently supplies the output of the back bias generation circuit to the substrate of the MOSFET.

A vibration cutting process diagnostic device diagnoses the propriety of a vibration cutting process to machine the sectional shape of a working object into a non-complete round shape by reciprocating a movable shaft. This device includes a frequency analyzer to calculate a frequency component contained in a position command signal for the movable shaft on the basis of shape data, which is machining shape data on a workpiece treated as the working object, and a machining speed set value; and a process diagnosis executor to diagnose the propriety of machining the shape data under the machining speed set value on the basis of the frequency component and a movable shaft parameter of the movable shaft.

Vibration cutting process diagnostic device

An inductor element is formed in a multiple layer lead structure including a lead, an insulative layer that insulates leads above and below, and a via provided in the insulative layer and connecting leads above and below wherein lead layers are multiply laminated layers, characterized in that: at least a portion of at least a pair of vertically adjacent leads are coiled leads; the coiled leads are connected in series, wherein current directions of vertically adjacent coiled leads are the same by a via provided on an end portion thereof, and form a serial inductance; and an inter-lead capacitance of the vertically adjacent coiled leads is larger than an inter-lead capacitance between other coiled leads formed in the same lead layer.

Inductor element, inductor element manufacturing method, and semiconductor device with inductor element mounted thereon

A voltage supply apparatus includes: a primary cell; and a constant voltage supply unit. The constant voltage supply unit has set therein a voltage drop determination value, which is a threshold that is higher than a positional-data loss level and is lower than a second output voltage, which is a constant voltage at a steady voltage level that the constant voltage supply unit outputs when in a steady state. The constant voltage supply unit converts a first output voltage of the primary cell to the second output voltage and supplies it to the absolute-position detection apparatus until the first output voltage falls below the threshold. When the first output voltage falls below the threshold, the constant voltage supply unit converts the first output voltage to a third output voltage which is a voltage at the same level as the threshold, and supplies it to the absolute-position detection apparatus.

Voltage supply apparatus

Growing community of inventors

Tokyo, Japan

Akira Tanabe