Tdk Corporation

Nec Corporation

Akira Takeishi

Munemitsu Hamada

Makoto Takahashi

Dai Matsuoka

Masatada Yodogawa

Hiraku Harada

Yoshihiro Hayashi

Takeshi Masuda

Hideo Mitsuhashi

Takahiro Onodera

Haruo Taguchi

Noriyuki Kubota

Katsuhisa Ohkawa

Yasutoshi Yamaguchi

To remove the turbulence affecting the positioning control of a bonding head along the Z axis when a stage is moved in the XY direction, and to exercise accurate wire loop control, a feed forward compensator is provided for a control unit. The feed forward compensator calculates a reaction force, which is applied to a bonding head due to the acceleration generated during horizontal movement along the XY axes, based on the distance between the center of a rotary shaft and the center of gravity of the bonding arm, the mass of the bonding arm, and the acceleration generated when the XY stage is moved along the XY axes. The obtained reaction force is transmitted as a feed forward value to a controller, in order to offset the reaction force.

Wire bonding apparatus

An electron-emitting electrode for discharge lamps etc. uses an electron-emitting material which contains a first metal component selected from Ba, Sr and Ca and a second metal component selected from Ta, Zr, Nb, Ti and Hf and also contains oxynitride perovskite. The electron-emitting material has restrained evaporation during electric discharge and a high resistance to ion sputtering.

Electrode

A polishing process monitoring apparatus of a semiconductor wafer is provided, which is capable of monitoring correctly the process independent of various factors affecting optical measurement, such as the configuration, material, and size of a layered structure on the wafer, and the geometric shapes of patterns and their arrangement for respective semiconductor chips. This apparatus is comprised of (a) a light irradiating means for irradiating a detection light beam to a semiconductor wafer, (b) a first light receiving means for receiving a specular-reflected light beam generated by reflection of the detection light beam at the wafer and for outputting a first signal according to an amount of the specular-reflected light beam, (c) a second light receiving means for receiving a scattered/diffracted light beam generated by scattering or diffraction of the detection light beam at the wafer and for outputting a second signal according to an amount of the scattered/diffracted light beam, and (d) a monitoring means for monitoring a polishing process of the wafer by using the first and second signals.

Polishing process monitoring method and apparatus, its endpoint detection method, and polishing machine using same

An electron-emitting material contains a first metal component selected from Ba, Sr and Ca and a second metal component selected from Ta, Zr, Nb, Ti and Hf and also contains oxynitride perovskite. The electron-emitting material has improved electron emission characteristics, restrained evaporation at elevated temperatures, and minimized consumption by ion sputtering. The electron-emitting material is prepared by firing a metal component-containing raw material disposed in proximity to carbon in a nitrogen gas-containing atmosphere to thereby create oxynitride perovskite.

Electron-emitting material and preparing process

Ceramic cathode fluorescent discharge lamp

Growing community of inventors

Tokyo, Japan

Akira Takeishi