Fujitsu Corporation

Fujitsu Semiconductor Limited

Kyushu Fujitsu Electronics Limited

Akira Takashima

Takao Nishimura

Fumihiko Taniguchi

Yoshikazu Kumagaya

Hiroshi Onodera

Masataka Mizukoshi

Mitsutaka Sato

Eiji Yoshida

Tadashi Uno

Kazuyuki Aiba

Fumihiko Ando

Hiroshi Yoshimura

Tetsuya Hiraoka

Mitsuhisa Watanabe

Kaname Ozawa

Junichi Kasai

Michio Sono

Kazuo Teshirogi

Tetsuya Fujisawa

Katsuhiro Hayashida

Yoshito Akutagawa

Takao Ohno

Shinichirou Taniguchi

Yuji Akashi

Mitsutaka Ikeda

Masahiko Ishiguri

Yoshihiro Tsukidate

Koji Sawahata

Kouichi Nakamura

Katsuhito Kikuma

Kosuke Otokita

Kazunari Kosakai

Toshihisa Higashiyama

Mitsuru Sato

Takashi Suzuki

Yasurou Matsuzaki

Yoshiharu Kato

Takaaki Suzuki

Satoru Kawamoto

Tsuyoshi Aoki

Toshiyuki Honda

Haruo Kojima

Yuichi Asano

Masaki Waki

Hidehiko Akasaki

Akihiro Kubota

Hayato Okuda

Koji Honna

Kazuhiro Yonetake

Koichi Sibasaki

Kazuya Kamimura

Sachiko Nogami

Kouhei Orikawa

Kousuke Otokita

A semiconductor device includes a semiconductor element having a main surface where an outside connection terminal pad is provided. The semiconductor element is connected to a conductive layer on a supporting board via a plurality of convex-shaped outside connection terminals provided on the outside connection terminal pad and a connection member; and the connection member commonly covers the convex-shaped outside connection terminals.

Semiconductor device

A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side. The hole is formed by etching, with the electrode pad serving as an etching stopper layer. An embedded electrode is formed in the hole. This embedded electrode serves to electrically lead the electrode pad to the principal surface on the bottom side of the silicon semiconductor substrate.

Semiconductor device suitable for a stacked structure

A semiconductor chip is secured in a state deformed into a substantially cylinder shape by a coating material formed on its surface. The deformed semiconductor chip is flip-chip connected to an interposer and sealed with sealing resin onto the interposer. Solder balls are provided, as external terminals, on the other side of the interposer.

Deformable semiconductor device

A stacked semiconductor device is disclosed that has a three-dimensional structure using general-purpose semiconductor device units (semiconductor devices) that are stacked with an interposer substrate being provided between an upper device unit and a lower device unit. The upper device unit includes a semiconductor device, a first wiring substrate, and an external connection terminal. The lower device unit includes a semiconductor device, a second wiring substrate, and a connection electrode that is prepared on the upper surface of the second wiring substrate. The interposer substrate includes a circuit board, a first conductive material connecting to the connection electrode, a second conductive material formed in a form position of the external connection terminal that is electrically connected to the second conductive material, and a third conductive material for electrically connecting the first conductive material and the second conductive material.

Stacked semiconductor device

The present invention relates to a semiconductor device having an MCP (Multi Chip Package) structure in which a plurality of semiconductor chips are mounted in the same package, a manufacturing method therefor and a semiconductor Substrate used therein. Atop a first semiconductor chip that is a memory chip is mounted a second Semiconductor chip that is a logic chip, with a first functional chip and a second functional chip that together form the first semiconductor chip being joined together via an unsliced scribe line. Additionally, a first functional chip and a second functional chip are given the same chip composition (32-bit memory) and respectively rotated 180 degrees relative to each other. These configurations are intended to improve performance, reduce costs and improve yield.

Multi chip package structure having a plurality of semiconductor chips mounted in the same package

A stacked-type semiconductor device has a reduced overall height and an improved reliability in the mechanical strength of the stacked structure. The semiconductor device also has an improved heat release characteristic. A first interposer has a surface on which first electrode pads are formed and a first semiconductor element is mounted with a circuit forming surface facing the first interposer. A second interposer has a surface on which second electrode pads are formed and a second semiconductor element is mounted with a circuit forming surface facing the second interposer. External connection terminals are provided on a surface of the second interposer opposite to the surface on which the second semiconductor element is mounted. The first and second interposers are electrically connected to each other by conductive members provided therebetween. A back surface of the first semiconductor element and a back surface of the second semiconductor element are fixed to each other by an adhesive.

Semiconductor device and manufacturing method thereof

A high-contrast image recognition can be performed by recognizing an image of a recognition mark from a back surface of a wafer by a visible-light camera by irradiating a visible light from a circuit pattern surface of a silicon substrate. A thickness of the silicon substrate is set to 5 &#x3bc;m to 50 &#x3bc;m. A white or visible light having a wavelength equal to or less than 800 nm is irradiated onto the circuit-pattern forming surface of the substrate. A visible light that has transmitted through the silicon substrate is received by a visible-light camera on a side of a back surface of the silicon substrate. An image of a recognition mark formed on the circuit-pattern forming surface of the silicon substrate is recognized by the visible-light camera.

Recognition method of a mark provided on a semiconductor device

A semiconductor device comprises: a semiconductor element; an external terminal used for an external connection; an interposer having the semiconductor element mounted on a first surface thereof and having the external terminal formed on a second surface thereof opposite to the first surface so as to electrically connect the semiconductor element and the external terminal; a resin sealing the semiconductor element on the first surface; and an interconnecting portion formed within the resin, the interconnecting portion having a first connecting part electrically connected to the external terminal and having a second connecting part exposed on an outer surface of the resin.

Semiconductor device having an interconnecting post formed on an interposer within a sealing resin

In a stacked semiconductor device which has a plurality of semiconductor chips of desired sizes stacked as one package, a first semiconductor chip is mounted on a flexible printed wiring board provided with external connecting terminals. A printed circuit board is placed and mounted on the first semiconductor chip by flip-chip bonding. A second semiconductor chip is secured onto the printed circuit board. The second semiconductor chip is connected to the flexible printed wiring board by wire bonding. The first semiconductor chip is connected to the flexible printed wiring board by wire bonding via the printed circuit board.

Stacked semiconductor device and method of producing the same

A semiconductor device is configured of a first semiconductor chip mounted on a substrate, a plate member arranged on the first semiconductor chip, and a second semiconductor chip arranged on the plate member. Bonding wires electrically connect the pads of the first semiconductor chip and the pads of the second semiconductor chip to the pads of the substrate, and a sealing resin seals the first semiconductor chip and the second semiconductor chip. A first portion of the plate member is displaced away from the ends of the first and second semiconductor chips, and a second portion of the plate member extending perpendicular to the first portion, projects outward from the first and second semiconductor chips to be exposed to the outside.

Semiconductor device with stack of semiconductor chips

A plurality of semiconductor devices can be mounted on a mounting board in a three-dimensional structure by stacking one on another with a simple structure. A semiconductor element is mounted on a first surface of an interposer. Electrode pads connected to the semiconductor element are arranged around the semiconductor element on the first surface of the interposer. Protruding electrodes are provided on the respective electrode pads. Through holes are formed in the interposer so as to extend from a second surface opposite to the first surface of the redistribution substrate to the respective electrode pads. The semiconductor element is encapsulated by a seal resin. Each of the protruding electrodes is higher than the sealed portion of the semiconductor element.

Semiconductor device having protruding electrodes higher than a sealed portion

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Kawasaki, Japan

Akira Takashima