Sanyo Electric Co., Ltd.

Semiconductor Components Industries, LLC

Casio Computer Co., Ltd.

Sanyo Semiconductor Manufacturing Co., Ltd.

Sanyo Semiconductor Co., Ltd.

Kanto Sanyo Semiconductors Co., Ltd.

Kabushiki Kaisha Toshiba

Nec Corporation

Fujitsu Microelectronics Limited

Kanto Sanyo Semiconductor Co., Ltd.

Fujitsu Semiconductor Limited

Akira Suzuki

Kojiro Kameyama

Mitsuo Umemoto

Koujiro Kameyama

Yoshio Okayama

Takashi Noma

Katsuyuki Seki

Hiroyuki Shinogi

Yukihiro Takao

Hiroshi Katsuda

Akihisa Ohmura

Yoshinori Seki

Hiroki Nishiyama

Keiichi Yamaguchi

Keita Odajima

Takaaki Ishii

Shinzo Ishibe

Takahiro Oikawa

Shigeki Otsuka

Hiroshi Yamada

Katsuhiko Kitagawa

Tetsuya Yoshitomi

Takeshi Arai

Kikuo Okada

Yasuyuki Ueshima

Masataka Hoshino

Noriaki Okada

Motoaki Wakui

Hisao Otsuka

Hiroshi Terao

Masanori Iida

Koichi Kuhara

Naofumi Tsuchiya

Kenji Takahashi

Takeshi Wakabayashi

Yosuke Nagayama

Nobuyuki Ikeda

Masaki Ogino

Susumu Kamiya

Toshimitsu Taniguchi

Shinya Mori

Yuichi Morita

Tomoyasu Kurokawa

Hiroshi Kanamori

Ippei Yamauchi

Shigeru Yokoyama

Kazuhiko Kanda

Ikuko Osajima

Tetsuhiro Maruyama

Tsutomu Shimazaki

Kenji Fukasawa

Shinji Ogishima

Takashi Tsukagoshi

Koichi Otsuka

Motohiro Takeda

Kenji c/o Kabushiki Kaisha Toshiba Takahashi

Hiroshi c/o Nec Corporation Terao

Masataka c/o Fujitsu Limited Hoshino

A wireless device includes a circuit board, a communicator disposed on the circuit board, and a casing accommodating the circuit board and the communicator. The casing has a through-hole in a side face. An antenna element is disposed on the exterior of the casing. A feeder extends through the through-hole in the casing and feeds electrical power from the communicator to the antenna element at a predetermined feeding position. A ground terminal extends through the through-hole in the casing and electrically connects the circuit board to the antenna element at a ground position of the antenna element at a predetermined distance from the feeding position.

Wireless device having low susceptibility to static electricity

A waterproof electronic device includes a waterproof case in which electronic components are embedded and a display which is able to display and which is placed in an opening of the waterproof case in an air tight manner. The waterproof electronic device includes a space for waterproof testing therein and the waterproof electronic device includes a window for waterproof testing at positions (i) corresponding to the space for waterproof testing and (ii) avoiding the display.

Waterproof electronic device

An electronic device includes a case with an opening portion; a cover member arranged in the opening portion so as to close the opening portion; a seal member provided between an outer circumferential surface of the cover member and an inner circumferential surface of the opening portion; a reinforcing portion made of a nonconductive material and provided, in the case, on a portion outside the inner circumferential surface in a direction orthogonal to an axial direction of the opening portion; an antenna; and an electronic component arranged in the case and configured to process a radio wave received by the antenna.

Electronic device

An electronic device includes a housing and an internal pressure regulator valve. The internal pressure regulator valve includes a valve body of flexible material. The valve body has a valve hole and a hollow. The hollow is continuous with the valve hole and opens into the housing. Through the valve hole, gas is released to outside.

Electronic device, wearable device, pressure regulator valve and method for manufacturing pressure regulator valve

When external pressure extremely increases, a waterproof vibration membrane tends to be resiliently deformed extremely toward the inside. However, an inward resilient deformation inhibiting member provided on the inner side of the waterproof vibration membrane with a space therebetween inhibits this extreme inward resilient deformation of the waterproof vibration membrane, whereby the waterproof vibration membrane is prevented from being ruptured or plastically deformed. On the other hand, when the internal pressure extremely increases, the waterproof vibration membrane tends to be resiliently deformed extremely toward the outside. However, an outward resilient deformation inhibiting member provided on the outer side of the waterproof vibration membrane with a space therebetween inhibits this extreme outward resilient deformation of the waterproof vibration membrane, whereby the waterproof vibration membrane is prevented from being ruptured or plastically deformed.

Microphone

A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a pad electrode formed on a semiconductor substrate through a first insulation layer, and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein the via hole includes a first opening of which a diameter in a portion close to the pad electrode is larger than a diameter in a portion close to the back surface of the semiconductor substrate, and a second opening formed in the first insulation layer and continuing from the first opening, of which a diameter in a portion close to the pad electrode is smaller than a diameter in a portion close to the front surface of the semiconductor substrate.

Method of manufacturing semiconductor device with through hole

A motor drive circuit includes: a digital filter configured to attenuate amplitude in a frequency band including a resonance frequency of an actuator in a target current signal, the target current signal being a digital signal indicative of a target value of a drive current, the drive current being supplied to a voice coil motor configured to drive the actuator; a digital-analog converter configured to convert an output signal of the digital filter into an analog signal, and output the converted analog signal as a current control signal; and a drive circuit configured to supply the drive current to the voice coil motor according to the current control signal.

Selection circuit with digital filter for VCM

An image capturing deviceincludes three blocks, that is, a lens blockhaving an imaging lens, a display block, and a frame block. The display blockhas a display unitwhich performs display using a liquid crystal, a transparent touch screenwith which the display unitis covered, a shutter buttonwhich is disposed adjacent to the display unit, and a power button. The frame blockhas a generally U-shaped frame form and surrounds the circumferences of the lens blockand the display block. Each of the display blockand the frame blockis coupled to the lens blockrotatably via a biaxial hinge unit. Especially, the display blockand the frame blockare coupled to the lens blockrotatably via a first hinge and second hinges.

Image capturing device

A motor-drive circuit includes: a filter circuit to attenuate a frequency band including a resonance frequency of an actuator in a target-current signal, the target-current signal corresponding to a digital signal indicative of a target value of a driving current; a digital-analog converter to convert an output signal of the filter circuit into an analog signal, to be outputted as a current-control signal; and a driving circuit to supply the driving current to the voice-coil motor in accordance with the current-control signal, the filter circuit including: a digital notch filter; and a digital low-pass filter, wherein either one of the digital notch filter and the digital low-pass filter configured to be inputted with the target-current signal, the other one of the digital notch filter and the digital low-pass filter configured to be inputted with an output signal of the one of the digital notch filter or the digital low-pass filter.

Motor drive circuit

This invention is directed to form a homogeneous film in a via hole formed in a semiconductor device using Bosch process. The via hole that penetrates through a predetermined region in a semiconductor substrate is formed by etching the semiconductor substrate from one of its surface to the other by the Bosch process using a mask layer as a mask. Next, the mask layer is removed. Then, scallops are removed by dry etching to flatten a sidewall of the via hole. Following the above, an insulation film, a barrier layer and the like are formed homogeneously in the via hole.

Manufacturing method of semiconductor device

A mesa type semiconductor device and its manufacturing method are offered to increase a withstand voltage as well as reducing a leakage current. An N-type semiconductor layer is formed on a surface of a semiconductor substrate, and a P-type semiconductor layer is formed on the N-type semiconductor layer. After that, a mesa groove is formed by etching the P-type semiconductor layer, a PN junction, the N-type semiconductor layer and a partial thickness of the semiconductor substrate so that a width of the mesa groove grows from a surface of the P-type semiconductor layer toward the semiconductor substrate. Subsequent wet etching removes a damaged layer in an inner wall of the mesa groove caused by the preceding etching and transforms the mesa groove in a region close to a surface of the P-type semiconductor layer so that a width of the mesa groove increases toward the surface of the P-type semiconductor layer. After that, the semiconductor substrate and the layers stacked on it are diced.

Mesa type semiconductor device

The invention provides a mesa semiconductor device and a method of manufacturing the same which enhance the yield and productivity. An N&#x2212; type semiconductor layer is formed on a front surface of a semiconductor substrate, and a P type semiconductor layer is formed thereon. An anode electrode is further formed on the P type semiconductor layer so as to be connected to the P type semiconductor layer, and a mesa groove is formed from the front surface of the P type semiconductor layer deeper than the N&#x2212; type semiconductor layer so as to surround the anode electrode. Then, a second insulation film is formed from inside the mesa groove onto the P type semiconductor layer on the outside of the mesa groove. The second insulation film is made of an organic insulator such as polyimide type resin or the like. The lamination body made of the semiconductor substrate and the layers laminated thereon is then diced along a scribe line.

Mesa semiconductor device and method of manufacturing the same

The invention provides a mesa semiconductor device and a method of manufacturing the same which minimize the manufacturing cost and prevents contamination and physical damage of the device. An N&#x2212; type semiconductor layer is formed on a front surface of a semiconductor substrate, and a P type semiconductor layer is formed thereon. An anode electrode is further formed on the P type semiconductor layer so as to be connected to the P type semiconductor layer, and a mesa groove is formed from the front surface of the P type semiconductor layer deeper than the N&#x2212; type semiconductor layer so as to surround the anode electrode. Then, a second insulation film is formed from inside the mesa groove onto the end portion of the anode electrode. The second insulation film is made of an organic insulator such as polyimide type resin or the like. The lamination body made of the semiconductor substrate and the layers laminated thereon is then diced along a scribe line.

Problems with a conventional mesa type semiconductor device, which are deterioration in a withstand voltage and occurrence of a leakage current caused by reduced thickness of an insulation film on an inner wall of a mesa groove corresponding to a PN junction, are solved using an inexpensive material, and a mesa type semiconductor device of high withstand voltage and high reliability is offered together with its manufacturing method. A stable protection film made of a thermal oxide film is formed on the inner wall of the mesa groove in the mesa type semiconductor device to cover and protect the PN junction, and an insulation film having negative electric charges is formed to fill a space in the mesa groove covered with the thermal oxide film so that an electron accumulation layer is not easily formed at an interface between an Ntype semiconductor layer and the thermal oxide film. With the structure described above, an influence of the positive electric charges in the thermal oxide film is weakened and an extension of a depletion layer into the Ntype semiconductor layer at the interface with the thermal oxide film is secured.

Mesa type semiconductor device and manufacturing method thereof

This invention improves reliability of a semiconductor device and a manufacturing method thereof. A glass substrate is bonded on a surface of a silicon wafer formed with pad electrodes. Next, via holes are formed from a back surface of the silicon wafer to pad electrodes, and a groove is formed extending along a center line of a dicing line and penetrating the silicon wafer from its back surface. After then, in processes including heating treatment, cushioning pads, wirings, a solder mask, and solder balls are formed on the back surface of the silicon wafer. Finally, the silicon wafer bolstered by the glass substrate is separated into individual silicon dice by dicing.

Semiconductor device and manufacturing method of the same

Growing community of inventors

Ota, Japan

Akira Suzuki