Gigaphoton Inc.

Kyushu University

Akira Suwa

Osamu Wakabayashi

Masakazu Kobayashi

Kouji Kakizaki

Hiroshi Umeda

Koji Kakizaki

Hiroshi Ikenoue

Hiroaki Tsushima

Hisakazu Katsuumi

Masashi Shimbori

Tomoyuki Ohkubo

Hiroaki Oizumi

A laser processing apparatus according to the present disclosure includes a placement base on which a processing receiving object is placed, an optical system that guides laser light to the processing receiving object, a gas supply port via which a gas is supplied to a laser light irradiated region of the processing receiving object, a gas recovery port via which the supplied gas is recovered, a mover that moves the irradiated region, and a controller that controls, in accordance with the moving direction of the irradiated region, the direction of the flow of the gas flowing from the gas supply port to the gas recovery port, and the controller changes the direction of the gas flow in response to a change in the moving direction of the irradiated region in such a way that the gas flows in the direction opposite the moving direction of the irradiated region.

Laser processing apparatus, laser processing system, and laser processing method

A laser irradiation method of irradiating, with a pulse laser beam, an irradiation object in which an impurity source film is formed on a semiconductor substrate includes: reading fluence per pulse of the pulse laser beam with which a rectangular irradiation region set on the irradiation object is irradiated and the number of irradiation pulses the irradiation region is irradiated, the fluence being equal to or larger than a threshold at or beyond which ablation potentially occurs to the impurity source film when the irradiation object is irradiated with pulses of the pulse laser beam in the irradiation pulse number and smaller than a threshold at or beyond which damage potentially occurs to the surface of the semiconductor substrate; calculating a scanning speed Vdx; and moving the irradiation object at the scanning speed Vdx relative to the irradiation region while irradiating the irradiation region with the pulse laser beam at the repetition frequency f.

Laser irradiation method and laser irradiation system

A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth &#x394;Zsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 &#x3bc;m to 150 &#x3bc;m inclusive at the transfer position.

Laser processing method and laser processing system

A laser doping device includes: a solution supply system configured to supply a solution containing dopant to a doping region; a pulse laser system configured to output pulse laser light including a plurality of pulses, the pulse laser light transmitting through the solution; a first control unit configured to control a number of pulses of the pulse laser light for allowing the doping region to be irradiated, and to control a fluence of the pulse laser light in the doping region; and a second control unit configured to control a flow velocity of the solution so as to move bubbles, from the doping region, occurring in the solution every time of irradiation with the pulse.

Laser doping device and semiconductor device manufacturing method

The excimer laser device receives data on a target value of pulse energy from an external device and outputs a pulse laser beam. The excimer laser device includes a master oscillator, at least one power amplifier including a chamber provided in an optical path of the pulse laser beam outputted from the master oscillator, a pair of electrodes provided in the chamber, and an electric power source configured to apply voltage to the pair of electrodes, and a controller configured to control the electric power source of one power amplifier of the at least one power amplifier to stop applying the voltage to the pair of electrodes based on the target value of the pulse energy.

Excimer laser device

A gas laser device may include: a laser chamber containing laser gas; a first discharge electrode disposed in the laser chamber; a second discharge electrode disposed to face the first discharge electrode in the laser chamber; and a condenser including a polyimide dielectric and configured to supply power to between the first discharge electrode and the second discharge electrode.

Growing community of inventors

Oyama, Japan

Akira Suwa