Kabushiki Kaisha Toshiba

Toshiba Engineering Corporation

Akira Sudo

Yusuke Kohyama

Toshiharu Watanabe

Katsuhiko Sato

Haruhiko Koyama

Masaki Yoda

Naruhiko Mukai

Motohiko Kimura

Susumu Yoshikawa

Yuji Sano

Muneyoshi Kikunaga

Seishi Shima

A laser maintaining and repairing apparatus including a laser oscillator 7, beam guiding apparatus 8 connected to guide a laser beam of the laser oscillator 7, and emitting head 12 for converging the laser beam from the beam guiding apparatus 8 and emitting the beam to a portion to be processed. The beam guiding apparatus 8 includes liquid-tight tubular beam guiding members 9a to 9h. The beam guiding members 9a to 9h are provided with reflecting members 13a, 13b and at least one of mechanisms 10a, 10b and 11a, 11b for providing horizontal turning, horizontal extending, vertical turning and vertical extending operations at the beam guiding members 9a to 9h. With the laser maintaining and repairing apparatus of the noted structure, a laser beam of high energy density can be utilized and processing by the laser beam can be facilitated or the applying range can be increased.

Laser maintaining and repairing apparatus

The first element separation oxide film consisting of a plurality of line-shaped portions parallel to the bit line is formed on the surface of the P-type silicon substrate. The first and second trenches are formed in that portion of the P-type silicon substrate which is located between an adjacent pair of line-shaped portions of the first element separation oxide film such that both sides of the trenches come in contact with the first element separation oxide film. A sheath plate capacitor is formed in each of the trenches. The second element separation oxide film having a thickness less than that of the first element separation oxide film is formed on that portion of the surface of the P-type silicon substrate which is located between the first and second trenches.

Method of manufacturing a semiconductor memory device

This invention is related to a method of manufacturing a semiconductor including a MOSFET. The method comprises a step of forming an opening in a first insulating layer covering a second insulating layer and a surface of semiconductor substrate, so that the second insulating layer covering a gate electrode, and a surface of a source region and a drain region are exposed, a step of burying a conductive material in the opening, and a step of etching the conductive material so that a surface of the second insulating layer is exposed.

Method of manufacturing semiconductor device

A gate oxide film is formed on the surface of a P-type silicon substrate. A gate electrode is formed on the gate oxide film. Phosphorus is ion-implanted into the P-type silicon substrate, using the gate electrode as a mask. Thus, N.sup.- -type layers of LDD regions are formed in the P-type silicon substrate. Sidewall regions of material having a high dielectric constant are formed on both sides of the gate electrode. The P-type silicon substrate is etched downward adjacent to both the sidewall regions. N.sup.+ -type layers of source and drain regions are formed in the etched surface of the P-type silicon substrate.

MOSFET having improved driving performance

An element separating oxide film is formed on a P-type semiconductor substrate by means of a selective oxidation method, and then a gate oxide film is formed on the element separating oxide film by a thermal oxidation method. A gate electrode film made of an N-type polysilicon material is formed so as to extend along a step portion of the element separating oxide film on the semiconductor substrate. The upper surface of the gate electrode film is flattened by means of a surface polishing method. Then, isotropic etching is performed by using a resist pattern as a mask, thereby forming a gate electrode. Since in the method the upper surface of the gate electrode film in the flattened, the semiconductor substrate is prevented from being subject to over-etching when a gage electrode is formed, so that the changes of characteristics of MOS transistors are prevented whose gate insulative films have been becoming thinner as their elements have been finer.

Method of making a semiconductor device with conductors on stepped

The present structure is characterized by the electrode of a trench capacitor of a DRAM and a periphery thereof. A trench is formed adjacent to an N type region in a substrate. An insulating film is formed on the side wall of this trench and only a part of the insulating film around the upper portion of the trench is removed, forming a window. An N type polycrystalline silicon film of a lower capacitor electrode is formed over a region from the bottom of the trench to below the window, and a capacitor insulating film is formed on this polycrystalline silicon film. A polycrystalline silicon film which becomes a first upper capacitor electrode is formed on the capacitor insulating film, filling the trench up to the lower edge of the window. A monocrystalline silicon film which becomes a second upper capacitor electrode is formed on the latter polycrystalline silicon film in such a way as to contact an N type region, filling the upper portion of the trench. An insulating film similar to a gate insulating film on the substrate is formed on the monocrystalline silicon film.

Trench capacitor cells for a dram having single monocrystalline

Semiconductor memory device having cell isolation structure

Semiconductor device with conductors on stepped substrate having planar

A semiconductor body has a first and a second element formation surface. The semiconductor body is constructed in such a manner that a first semiconductor substrate, which has a first main surface at which the plane appears, is laminated to a second semiconductor substrate, which has a second main surface at which the plane appears. Made in the first semiconductor substrate is at least one opening at which the second main surface of the second semiconductor substrate. The first main surface of the first semiconductor substrate becomes the first element formation surface of the semiconductor body, and the second main surface of the second semiconductor substrate becomes the second element formation surface of the body.

Growing community of inventors

Yokohama, Japan

Akira Sudo