Denso Corporation

Nippondenso Co., Ltd.

Shin-etsu Chemical Co., Ltd.

Akira Shintai

Hiroshi Shibata

Yusuke Tainaka

Fuyuki Maehara

Hidetoshi Kato

Masashi Totokawa

Shinji Kawano

Hirokazu Imai

Yuji Ootani

Toshio Shiobara

Koji Futatsumori

Takashi Aoki

Yukihiro Kato

Hiroshi Nomura

Seizi Katayama

Shinsuke Nagasaka

Takashige Saitoh

Yasutaka Yoshida

Masahiro Matsunoshita

Atsushi Munaoka

Osamu Arao

Shuji Hirata

Kazuo Katoh

A radar apparatus includes a board, a high-frequency integrated circuit mounted to the board, a metallic housing arranged to face the high-frequency integrated circuit, and a radio-absorbing and heat-dissipating unit. The radio-absorbing and heat-dissipating unit includes a radio-absorbing and heat-dissipative gel. The radio-absorbing and heat-dissipating unit is configured to cover at least part of the high-frequency integrated circuit and to be in contact with the metallic case.

Radar apparatus

In a radar apparatus, a high-frequency integrated circuit is mounted to a board, and a shielding case encloses the high-frequency integrated circuit. A radio-absorbing and heat-dissipative gel is arranged to cover at least part of the high-frequency integrated circuit and to be in contact with the shielding case.

A radar device includes: a substrate including multiple high-frequency conductor layers arranged on a front surface; a semiconductor component in contact with the high-frequency conductor layers via conductive members; and an adhesive that bonds the semiconductor component to the front surface of the substrate. The semiconductor component has a bottom surface and a first side surface facing in a first direction. All the multiple high-frequency conductor layers include at least high-frequency conductor layers bending in a plane of the front surface and thereby extend, on the front surface, from inside ends facing the bottom surface to outside ends positioned in the first direction from the first side surface. The adhesive is in contact with the front surface except for the sites of the multiple high-frequency conductor layers formed and in contact with the side surfaces of the semiconductor component.

Radar device

A conductor composition being able to easily secure the conductivity at the same level as an Ag bulk at low temperature process, a mounting substrate utilizing the conductor composition and a mounting structure utilizing the conductor composition are provided. In a mounting structure, wherein one or more electrodes () of a mounting substrate () and one or more surface mounting components () are connected through a conductor composition (), and one or more surface wirings () of the mounting substrate (), one or more inner-layer wirings () and one or more via conductors () are formed with the conductor composition, the conductor composition contains conductive particles with electrical conductivity, and the conductive particles are composed of low crystallized Ag fillers with the crystal size of 10 &#x3bc;m or less.

Conductor composition, a mounting substrate and a mounting structure utilizing the composition

An electronic device includes an electronic element having a detecting part on one surface thereof, a base member, bumps, and an adhesive film. The base member is arranged to face the one surface of the electric element. The bumps are arranged between the electric element and the base member for electrically coupling the electric element and the base member. The adhesive film is attached to the one surface of the electronic element and has an electronic insulating property. In addition, the adhesive film has a hollow part at a portion corresponding to the detecting part in a manner separated from the detecting part. Furthermore, a first pressure in the hollow part is higher than a second pressure outside the hollow part.

Electronic device and method of manufacturing the same

An electronic component unit including a metallic member and an electronic component, such as a semiconductor element, mounted on the metallic member is encapsulated with molding resin such as epoxy resin, thereby forming an electronic package. The electronic component unit is covered with primer made of a material such as resin to increase an adhesive force of the molding resin to the electronic component unit. A glass transition temperature of both of the molding resin and the primer is set to a temperature higher than 200&#xb0; C. to keep the adhesive force unchanged at least up to the ambient temperature of 200&#xb0; C. and to secure a reliability of the electronic package. A metallic lead wire connected to the electronic component may be encapsulated together with the electronic component unit. An entire surface of the electronic component unit may be covered with the primer to further improve the adhesive force.

Electronic package encapsulating electronic components therein

A conductor composition being able to easily secure the conductivity at the same level as an Ag bulk at low temperature process, a mounting substrate utilizing the conductor composition and a mounting structure utilizing the conductor composition are provided. In a mounting structure, wherein one or more electrodes () of a mounting substrate () and one or more surface mounting components () are connected through a conductor composition (), and one or more surface wirings () of the mounting substrate (), one or more inner-layer wirings () and one or more via conductors () are formed with the conductor composition, the conductor composition contains conductive particles with electrical conductivity, and the conductive particles are composed of low crystallized Ag fillers with the crystal size of 10 nm or less.

An IC chip for signal processing circuit is enclosed in a mold IC and a pressure sensitive element unit is integrally provided thereon. When the mold IC is housed in a case, the mold IC is fixed to the case under a state where ends of connector pins insert-molded to the case are electrically connected to external terminals of the mold IC. Thereby, a sensor signal is outputted from other ends of the connector pins. By integrating the IC chip for signal processing circuit in the mold IC, the IC chip for signal processing circuit can be protected against a contaminated environment at a location where the pressure sensitive element unit is arranged.

Semiconductor physical quantity sensor device having semiconductor

A hybrid IC substrate and a power transistor are mounted on a mounting base so as to form a lead frame assembly. The hybrid IC substrate and the power transistor are electrically connected by wires. The lead frame assembly is held between upper and lower molding dies. Inner leads are arranged in a vicinity of an air vent communicating with a molding cavity defined between the upper and lower molding dies so as to protrude into the molding cavity. A liquefied molding resin is injected into the molding cavity from a gate at an upstream side of the molding cavity opposed to the inner leads. The injected molding resin is separated into upper and lower resin flows advancing above and below the lead frame assembly. Then, either of the upper and lower resin flows reaches a downstream side of the molding cavity and merges into the other resin flow after passing through clearances between the inner leads at a reduced speed decelerated by the inner leads, thereby filing the molding cavity with the molding resin without causing any void.

Manufacturing method for a resin sealed semiconductor device

An epoxy resin composition comprising (i) an epoxy resin, (ii) a phenolic curing agent, (iii) an organophosphorous curing agent, (iv) alumina, and (v) a separating means for separating the organophosphorous curing agent and the alumina, which may be a coating over the surfaces of the organophosphorous curing agent.

Epoxy resin composition and cured product thereof

A resin-sealed semiconductor device, including a lead frame. A semiconductor chip is formed on the lead frame and is electrically connected with the lead frame. At least a part of the lead frame and the semiconductor chip are sealed with a theremosetting resin which includes a base resin, aluminum oxide and fused silica. Stress acting on the semiconductor chip is reduced because the thermal expansion coefficient of the thermosetting resin becomes low due to the fused silica. At the same time the thermal conductivity of the thermosetting resin is increased because of the aluminum oxide.

Resin-sealed semiconductor device

This invention provides a resin sealed IC regulator, which comprises a first connecting terminal electrically connected to a generator, a second connecting terminal electrically connected to a device other than the generator, a monolithic IC which controls an operation of the generator, mounted on a conductive member, and connected to both the first connecting terminal and the second connecting terminal and a resin molded portion of an electric insulating resin sealing the monolithic IC and at least a portion of the first and second connecting terminals are connected to the monolithic IC. Whereby an IC regulator which can be effectively used with an electrical load can be obtained, and further, an IC regulator having a more reliable control performance and able to be produced at low production cost can be obtained.

Resin sealed semiconductor device and a method for making the same

This invention provides a resin sealed IC regulator, which comprises a first connecting terminal electrically connected to a generator, a second connecting terminal electrically connected to a device other than the generator, a monolithic IC which controls an operation of the generator, mounted on a conductive member, and connected to both the first connecting terminal and the second connecting terminal and a resin molded portion of an electric insulating resin sealing the monolithic IC and at least a portion of the first and second connecting terminals are connected to the monlithic IC. Whereby an IC regulator which can be effectively used with an electrical load can be obtained, and further, an IC regulator having a more reliable control performance and able to be produced at low production cost can be obtained.

Growing community of inventors

Chita, Japan

Akira Shintai