Kabushiki Kaisha Toshiba

Nissan Motor Company Limited

Meiji Seika Kaisha, Ltd.

Hitachi, Ltd.

International Business Machines Corporation

Akira Shimizu

Fumitaka Arai

Riichiro Shirota

Yasuhiko Matsunaga

Eiji Shiotani

Daisuke Terada

Makoto Sakuma

Hidenobu Matsuyama

Keiichi Ajito

Osamu Hara

Seiji Shibahara

Shuichi Gomi

Kiyokazu Sugiyama

Yoshitsugu Noshi

Yoshito Utsumi

Minako Araake

Ken-ichi Kurihara

Nobue Kikuchi

Norihisa Arai

Itaru Nishizawa

Nobutoshi Sagawa

Shigekazu Inohara

Hirohisa Shibayama

Kiyohisa Suzuki

Tsuneo Ishizuka

Satoru Sakurai

Aiko Miyata

Yoshihisa Kojima

Seiichi Aritome

Toshitake Yaegashi

Nobuo Kawamura

Shinji Fujiwara

Kohichi Kamijoh

Shigeharu Inouye

Masayuki Ichige

Naoki Okamoto

Koki Ueno

Kimio Nishimura

Takeshi Nakano

Masao Koyama

Kazutomo Ushijima

Kiyoshi Hasegawa

Toru Sasaki

Hisataka Meguro

Tsuneo Okonogi

Takashi Yaguchi

Seisuke Tokuda

Yoshinori Izawa

Yuta Ishii

Shinji Miyadoh

Michiko Tanaka

Hiroaki Mochida

Masami Tashiro

Jun Inomata

Akiharu Tashiro

Koichi Kanai

Hiroomi Watabe

Junichi Uchiyama

Takashi Iiya

Kei Fujii

Shinji Someno

Junko Yoshida

Hiroshi Hatta

Shuji Adachi

Dai Sakai

Nobuyuki Kuroki

Masanao Yomogizawa

Ken Harada

Tadahiro Shimadzu

Eriko Tanaka

Kiyokazu Sugiyma

A computer-implemented method for increasing a recognition rate of an optical character recognition (OCR) system is provided. The method includes preprocessing by receiving an image, and extracting all vertical lines from the image. The method includes adding vertical lines at character areas of the image, extracting all horizontal lines from the image, and creating an unlined image removing all the vertical/horizontal lines from the image. The method further includes determining a border of a vertical direction of the unlined image based on the total of pixels of rows in each column, and adding vertical/horizontal auxiliary lines between characters of the unlined image. The method also includes postprocessing by receiving garbled words of OCR output, removing noise after morphologically analyzing, replacing garbled letters with correct ones based on a frequent edit operation, and outputting the correct word, weighting results of image distance calculations based on machine learning.

Optical character recognition support system

Provided is a defect detection device capable of measuring the volume of surface defects. The defect detection device includes: an imaging device configured to image an image of an inspection object; a binarization processing unit configured to subject the image to first and second binarization processing by use of different first and second binarization thresholds, so as to calculate first and second sizes for an identical defect in the image; a ratio calculation unit configured to calculate a first ratio of the second size to the first size; and a depth determination unit configured to determine a depth of the defect depending on the first ratio.

Defect detection device and production system

A manufacturing method for manufacturing a fuel cell separator assembly includes a joining step for bringing opposing projections of uneven portions of separators into contact with each other through use of pressing members to join the projections through use of a welding robot. In the joining step, an elastic member is interposed between the pressing members and at least one of first and second separators so that a pressing force from the pressing members is imparted to the first and second separators. In this way, the opposing projections are brought into contact with each other by elastic deformation of the elastic member.

Apparatus and method for producing fuel cell separator assembly

According to this invention, a data arrangement method, the computer connected to a storage system which provides a plurality of logical storage devices comprising a plurality of physical storage devices arranges data in a logical storage volume constructed by integrating the plurality of logical storage devices. The method includes: a step wherein the computer receives an instruction to build the logical storage volume using the plurality of logical storage devices or to rebuild the constructed logical storage volume; a step wherein the computer obtains information about the plurality of physical storage devices constituting each of the plurality of logical storage devices included in the received instruction; and a step wherein the arrangement position of data into the logical storage volume is determined on the basis of the obtained information about the plurality of physical storage devices.

Data arrangement method and data management system for improving performance using a logical storage volume

According to one embodiment, the memory controller outputs a first command, then outputs N pieces of second commands to first and second memory chips, and reads out the read data from the first and second memory chips. First time is for reading out the read data from a memory cell array to a buffer, and second time is for transferring data of the one-Nth of the read data from the buffer to the memory controller. The memory controller outputs the first command, then outputs M pieces of the second commands to the first memory, then outputs a first command to the second memory chip, and then outputs (N&#x2212;M) pieces of the second commands to the first memory chip. A relationship of (N&#x2212;M&#x2212;1)&#xd7;(second time)&#x3c;first time&#x3c;=(N&#x2212;M)&#xd7;(second time) is satisfied.

Memory system

A cylindrical internal surface processing method comprises forming a cylinder bore, roughening an upper section of the bore, depositing coating onto the bore, and machining a lower section of the bore and the coating. The forming of the cylinder bore includes forming the upper and lower sections with the lower section being axially spaced from the upper section and having an axial length greater than zero. The roughening creates a roughened surface such that a radially innermost edge of the roughened surface has an internal diameter smaller than an internal diameter of the lower section. The coating is deposited to cover the upper section and at least a portion of the lower section. The machining forms a tapered portion and a cylindrical portion, a radially outermost edge of the cylindrical portion having an internal diameter larger than that of a radially outermost edge of the roughened surface.

Cylindrical internal surface processing method

A method for processing a cylinder block is disclosed, wherein a protrusion protruding toward a crankcase is provided at a crankcase-side edge of a cylinder bore and a sprayed coating is formed on an inner surface of the cylinder bore and an inner surface of the protrusion continuous with the inner surface of the cylinder bore. After forming the sprayed coating, at least part of the protrusion is removed together with the sprayed coating formed on the inner surface of the protrusion. Accordingly, even in the case of removing the edge portion of the cylinder bore on the crankcase side, a sufficient margin to be removed can be ensured while a reduction in size of the cylinder block is achieved.

Method for processing cylinder block, cylinder block and thermal-sprayed cylinder block

A cylinder block is provided with a cylinder bore and a thermally sprayed metallic coating disposed on an internal wall of the cylinder bore. The internal wall has first and second wall sections that are located at different axial locations along the internal wall of the cylinder bore. The thermally sprayed metallic coating is disposed on the internal wall of the cylinder bore by spraying droplets of a molten metal. The thermally sprayed metallic coating includes a first thermally sprayed coating portion having a first iron oxide concentration and a second thermally sprayed coating portion having a second iron oxide concentration. The first thermally sprayed coating portion is disposed on the first wall section. The second thermally sprayed coating portion is disposed on the second wall section. The second iron oxide concentration is different from the first iron oxide concentration.

Cylinder block and thermally sprayed coating forming method

A sprayed film forming method and apparatus in which the thickness of the sprayed film in a predetermined region is increased so as to unify the entire thickness. A sprayed film is formed at a cylinder bore inner surface while a spraying gun is moved in an axial direction during rotation inside the bore. Air inside the bore is sucked out to prevent foreign material from being caught in the sprayed film. The flow rate inside the bore tends to become higher at an axial end on a suction side, resulting in a thinned region. The supply speed of a wire serving as a spraying material to the spraying gun or the number of sprays in this region is higher than those at other portions. The thickness at the axial end of the bore is made equal while suppressing an increase in working time and spraying material used.

Method of forming sprayed film on the inner surface of a bore

The disclosure is directed to ultrasonic bonding equipment, in which the anvil and horn include protrusions of varying height to grip the material being bonded. The outer protrusions may form smaller or differently shaped indentations in the material to reduce material stresses of the material at the outer region of the material. An exemplary embodiment of an ultrasonic bonding system includes an anvil and a horn arranged facing the anvil to ultrasonically bond a gripped portion of two or more layers of material. The gripped portion of the layers includes an inner region and an outer region. The anvil and the horn apply a gripping force to the outer region that is less than a gripping force applied to the inner region of the gripped materials.

Ultrasonic bonding equipment and resulting bonding structure

A floating gate is formed on a semiconductor substrate via a gate insulating film. Diffused layers are formed as sources or drain regions on opposite sides of the floating gate in the semiconductor substrate. First and second control gates are formed opposite to both of the diffused layers on the opposite sides of the floating gate via an inter-gate insulating film to drive the floating gate.

Nonvolatile semiconductor memory device including improved gate electrode

A trench isolation region is formed in a surface region of a semiconductor substrate to form a MOS type element region. A mask layer having an opening portion is formed on the semiconductor layer, the opening portion continuously ranging on the entire surface of the MOS type element region and on part of the trench isolation region provided around the MOS type element region. A first impurity ion is implanted into the entire surface via the mask layer to form a peak of the impurity profile is situated in the semiconductor layer under the bottom surface of the shallow trench isolation region. A second impurity ion is implanted into the entire surface via the mask layer to form a peak of the impurity profile is situated on the midway of the depth direction of the trench isolation region. Then, the first and second impurity ions are activated.

Semiconductor device having isolation region and method of manufacturing the same

A semiconductor memory device includes a first, second, and third memory cell transistors in which information can be electrically rewritten, addresses of which are consecutive in a row direction. One end of a current passage in each of a first, second, and third memory cell transistors is connected to a control electrode of the first, second, and third memory cell transistors. A write voltage, a pass voltage lower than the write voltage, and a first voltage lower than the pass voltage are applied to the other ends of the first, second, and third transfer transistors. A first control section applies the first on-voltage to make the first transfer transistor conductive, to a gate of the first transfer transistor. A second control section applies a second on-voltage to make the second and third transfer transistors conductive, to gates of the second and third transfer transistors.

Semiconductor memory device having row decoder in which high-voltage-applied portion is located adjacent to low-voltage-applied portion

Growing community of inventors

Yokohama, Japan

Akira Shimizu