Other

Japan as Represented by Director General of Agency of Industrial Science

National Institute of Advanced Industrial Science and Technology

Agency of Industrial Science and Technology

Nippon Zeon Company, Ltd.

Kanto Denka Kogyo Co., Ltd.

Daikin Industries, Ltd.

Asahi Glass Company, Limited

Hitachi-Kokusai Electric Inc.

Showa Denko Kabushiki Kaisha

Research Institute of Innovative Technology for the Earth

Japan as Represented by Director General of the Agency of Industrial

Akira Sekiya

Toshiro Yamada

Yutaka Ohira

Kuniaki Goto

Taisuke Yonemura

Masanori Tamura

Tetsuya Takagaki

Yuki Mitsui

Hiroyasu Ishida

Mitsuru Sugawara

Shinsuke Morikawa

Yasuhisa Furutaka

Ginjiro Tomizawa

Masami Iwasaki

Katsuya Fukae

Moriyuki Fukushima

Kazunori Watanabe

Tsuyoshi Takaichi

Shunichi Yamashita

Yasuo Nakazawa

Yasuo Hibino

Norifumi Ohtsuka

Shigeru Kurosawa

Kensuke Suda

The process for producing carbonyl fluoride according to the invention is a process for safely and easily producing high-purity carbonyl fluoride having a low content of carbon tetrafluoride, and comprises feeding carbon monoxide and fluorine to a reactor and allowing carbon monoxide to react with fluorine under the conditions of a reactor internal pressure of less than atmospheric pressure.

Process for producing carbonyl fluoride

A method for removing harmful substances in a vent gas containing a halogen or halogen compound gas remaining in the pipeline of a cylinder cabinet, which comprises contacting the vent gas with a treating agent comprising an alkaline earth metal compound, an alkali metal compound, zeolite, and a carbonaceous material.

Method for removing harmful substance in vent gas

A plasma cleaning gas for CVD chamber is a gas for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after film forming treatment on a substrate by a plasma CVD apparatus. The cleaning gas includes 100% by volume of fluorine gas which gas can generate plasma by electric discharge. When 100% by volume of fluorine gas is plasma-generated by electric discharge and then used as a cleaning gas, an extremely excellent etching rate can be attained and further plasma can be stably generated even in the total gas flow rate of 1000 sccm and at a chamber pressure of 400 Pa. Further, the uniformity of cleaning can be also ensured in the above conditions. Additionally the fluorine gas concentration is 100% so that the apparatus is not complicated and thereby the cleaning gas has excellent practicability.

Plasma cleaning gas and plasma cleaning method

The first chamber cleaning gas and the first silicon-containing film-etching gas of the present invention comprise at least one compound selected from the group consisting of FCOF, CF OCOF and CF OCF OCOF, and O in the specific amount, and optionally other gases. The second chamber cleaning gas and the second silicon-containing film-etching gas comprise CF COF, C F COF or CF (COF) and O in specific amounts, and optionally may comprise other gases. The chamber cleaning gases and silicon-containing film etching gases of the present invention have a low global warming potential and hardly generate substances in the exhaust gases such as CF , etc, which are harmful to the environment and have been perceived as contributing to global warming. Therefore, the gases are friendly to the global environment, and have easy handling and excellent exhaust gas treating properties. Further, the chamber cleaning gases of the invention have excellent cleaning rate.

Cleaning gases and etching gases

Disclosed is fluorocarbon-based dry etching gas which is free of global environmental problems and a dry etching method using a plasma gas obtained therefrom. The dry etching gas includes a fluorinated ether of carbon, fluorine, hydrogen and oxygen and having 2-6 carbon atoms.

Dry etching gas

A substrate to be etched is subjected to dry etching by using a dry etching gas containing a perfluorocycloolefin while a plasma with a high density region of at least 10 /cm is generated. As the perfluorocycloolefin, those having 3 to 8 carbon atoms, especially 4 to 6 carbon atoms are preferably used.

Dry etching method

A gaseous composition for dry etching, comprising a perfluorocycloolefin and 1 to 40% by mole, based on the perfluorocycloolefin, of at least one oxygen ingredient selected from oxygen gas and oxygen-containing gaseous compounds. As the perfluorocycloolefin, those having 3 to 8 carbon atoms, especially 4 to 6 carbon atoms, are preferably used.

Gas composition for dry etching and process of dry etching

In a process for preparing a fluorinated olefin having a carbon&mdash;carbon double bond, the carbon atoms of which have a fluorine atom, by reacting a halogenated olefin having at least one carbon&mdash;carbon double bond, a carbon atom or the carbon atoms of which bond have a chlorine atom or atoms bound thereto, and, in which the carbon atom or atoms with a single bond in the molecule have no halogen atom other than a fluorine atom, with an alkali metal fluoride, said reaction of the halogenated olefin with the alkali metal fluoride is conducted in the presence of an organic halogen-containing compound having a carbon&mdash;carbon single bond, a carbon or the carbons of which have at least one halogen atom other than fluorine atom.

Process for the preparation of fluorinated olefin

Process for producing fluorinated alkene and fluorinated alkane

Process for preparing trifluorohydrocarbon compound

A novel fluorine-containing polymeric compound represented by the general formula

Fluorine-containing polymeric compound and a method for the preparation

Fluorine-containing polymeric compound and method for the preparation

When a poly(allyl amine) is reacted with a perfluoroalkanoic acid ester of the formula R.sub.f --CO--OR, in which R.sub.f is a perfluoroalkyl group having 6 to 15 carbon atoms and R is an alkyl group having 1 to 5 carbon atoms, e.g., ethyl perfluorooctanoate, the amino groups in the poly(allyl amine) are almost quantitatively amidated to introduce the perfluoroalkyl groups into the polymer as bonded through amide linkages. When the degree of amidation of the amino groups is 40% or smaller, the fluorine-containing polymeric compound is soluble in organic solvent to give a solution, from which Langmuir-Blodgett's films, i.e. monomolecular and built-up film, can be readily prepared.

Fluorine-containing polymeric amine-amide compound and a method for the

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Tsukuba, Japan

Akira Sekiya