Hitachi, Ltd.

Hitachi Denshi Kabushiki Kaisha

Nippon Telegraph and Telephone Public Corporation

Hitachi Electronics, Ltd.

Hitachi Electronics Co., Ltd.

Hitchi Electronics Ltd.

Akira Sasano

Haruo Matsumaru

Hideaki Yamamoto

Hideaki Taniguchi

Toshihisa Tsukada

Toshio Nakano

Ken Tsutsui

Ryouji Oritsuki

Shinji Matsumoto

Katsuhiko Yarita

Hirofumi Suzuki

Sakae Someya

Ryuuzoh Nashimoto

Kazuo Shirahashi

Yuka Matsukawa

Yasuo Tanaka

Michiaki Hashimoto

Yasuharu Shimomoto

Toru Baji

Eiichi Maruyama

Norio Koike

Tadao Kaneko

Mitsuo Nakatani

Ryoji Oritsuki

Yoshio Taniguchi

Saburo Oikawa

Akiya Izumi

Michio Tsukii

Tetsuaki Suzuki

Toshihiro Tanaka

Yoshiyuki Kaneko

Koichi Seki

Tadaaki Hirai

Yukio Takasaki

Shusaku Nagahara

Hideto Kanamori

Takeo Nishimura

Kikuo Ono

Masakazu Aoki

Iwao Takemoto

Kazuhiro Sato

Genshiro Kawachi

Masaharu Kubo

Yoshinori Imamura

Chushiro Kusano

Yoko Wakui

Saburo Ataka

Mikio Ashikawa

Yoshio Hatano

Kikuo Douta

Kouichi Seki

Hirofumi Kunitou

Etsuko Kimura

Haruo Matumaru

Eiich Maruyama

Tadeo Kaneko

There are disclosed various types of TFT active matrix liquid crystal display devices and method of fabrication thereof in which a pixel is divided into three parts, a capacitor is added to each pixel, light shielding is applied to each TFT, and the matrix is driven by a DC cancelling technique.

TFT active matrix liquid crystal display devices

Liquid crystal display device including thin film transistors having gate electrodes completely covering the semiconductor

An anodized oxide film of Al is formed on a scanning signal line and a gate electrode. Al&mdash;Ta is used as material of each of the scanning signal line and gate electrode. The thickness of the anodized oxide film is set to at least 1,000 angstroms. The fabrication yield and reliability can be improved.

Active matrix display device using aluminum alloy in scanning signal line or video signal line

TFT active matrix LCD devices employing two superposed conductive films having different dimensions for the scanning signal lines

The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof. In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus-lines. The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).

Thin film transistor substrate, manufacturing method thereof, liquid

There are disclosed various types of TFT active matrix liquid crystal display devices in which a pixel is divided into three parts, a capacitor is added to each pixel, light shielding is applied to each TFT, and the matrix is driven by a DC cancelling technique.

TFT active matrix liquid crystal display devices with two layer gate

An anodized oxide film of Al is formed on a scanning signal line and a gate electrode. Al--Ta is used as material of each of the scanning signal line and gate electrode. The thickness of the anodized oxide film is set to 1,000 angstroms or more. The fabrication yield and reliability can be improved.

Active matrix display device using aluminum alloy in scanning signal

In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus lines. The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).

The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. Cr or Ta is used for gate terminals; aluminum or a metal composed mainly of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance); and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, for the anodic oxidation, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .beta..gtoreq.110-20T(T: film thickness of the positive type photoresist). The photoresist is subjected to a heat treatment prior to and after exposure, preferably the after-treatment being performed before developing. The anodic oxidation film is heat-treated after formation, to reduce the leak current.

An active matrix liquid crystal display device, with a plurality of thin-film transistors provided over a glass substrate each including an anodized oxide film of aluminum gate electrode, in which transparent pixel electrodes are formed in the same plane as the gate electrodes between the glass substrate and amorphous silicon islands over which source and drain electrodes are provided.

LCD device with TFTs in which pixel electrodes are formed in the same

First pixel electrodes and scan signal electrodes are formed in the same plane, and the first pixel electrodes and video signal electrodes are insulated and separated from each other by gate SiN films. Additional capacitors are formed by second pixel electrodes which are connected to the first pixel electrodes through apertures formed in the gate SiN films and which may be cut by a laser beam, and the scan signal electrodes. Thus, a short circuit defect between the electrodes is prevented, a highly reliable additional capacitor is attained, break of wiring is reduced and an aperture factor can be improved by expanding a width of the first pixel electrode. Thus, a multi-tonality and highly fine liquid crystal display device can be manufactured with a high yield.

Liquid crystal display with supplemental capacitors and method for

Growing community of inventors

Tokyo, Japan

Akira Sasano