Sharp Kabushiki Kaisha Corporation

Akira Sasakura

Tohru Okabe

Hirohiko Nishiki

Yasuo Mizokoshi

A semiconductor device includes a thin film transistor (), the thin film transistor () including: a substrate (); a gate electrode () provided on the substrate (); a gate dielectric layer () formed on the gate electrode (); an island-shaped oxide semiconductor layer () formed on the gate dielectric layer (); a protective layer () provided so as to cover an upper face () and an entire side face () of the oxide semiconductor layer (), the protective layer () having a single opening () through which the upper face () of the oxide semiconductor layer () is only partially exposed; and a source electrode () and a drain electrode () which are in contact with the oxide semiconductor layer () within the single opening ().

Semiconductor device and method of manufacturing same

The main object of the present invention is to provide an ionizer that has been improved to allow reduction of ripples and of balance shift without degrading the capability of an ionizer. A grounded ground electrode that makes contact with the ions for capturing a portion of the ions is provided in the vicinity of a discharge electrode. Means for changing the area of contact between ground electrode and the ions is provided.

Growing community of inventors

Sakai, Japan

Akira Sasakura