Kyocera Corporation

Akira Saito

Masaki Terazono

Shoji Kohsaka

Hideki Uchimura

Kazunori Koga

Kazumi Osamura

Disclosed is a silicon nitride sintered body comprising 70 to 99 mole % of silicon nitride, 0.1 to 5 moles % of a rare earth element oxide and up to 25 moles % of silicon oxide and having a silicon oxide-to-rare earth element oxide molar ratio of from 2 to 25, wherein silicon nitride crystal grains have a fine acicular structure having an average particle major axis of up to 7 .mu.m and an average aspect ratio of at least 3.

Silicon nitride sintered body and process for preparation thereof

A silicon carbide sintered body suitable for electrical discharge machining and a method for its manufacture are disclosed. The silicon carbide sintered body comprises 0.5-5% by weight of AlN, 0.5-3% by weight (as Ti) of a Ti compound, 0.5-8% by weight of C, 0-3% by weight (as B) of B or a B compound, and a remainder of substantially SiC. It has a volume resistivity at room temperature of not greater than 10 ohm-cm and a density of at least 90% of the theoretical density of SiC. The manufacturing method comprises shaping a mixture of the raw materials and sintering the shaped green body in a non-oxidizing atmosphere at a temperature of 2000.degree.-2300.degree. C.

Silicon carbide sintered body and a manufacturing method therefor

A silicon carbide powder consisting of an aluminum component such as aluminum nitride and aluminum oxide and a chromium component such as chromium carbide as essential ingredients and if desired, a rare earth element such as yttria is sintered into an integrated molded article. This sintered article has excellent strength and toughness and a markedly reduced tendency to undergo corrosion when brought into contact with iron at high temperatures.

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Kokubu, Japan

Akira Saito