Hitachi, Ltd.

Honda Motor Co., Ltd.

Akira Otaguro

Nobuaki Miyakawa

Tsuyoshi Fujiwara

Hidenori Sato

Kiyomi Katsuyama

Toshio Saito

Kiyohiko Sato

Ryohei Maeno

Daichi Matsumoto

Yukino Ishii

Manabu Otake

Yoshiya Takahira

Namio Katagiri

The orientation polarization (positive and negative) of the Si&#x2014;N bonds and the Si&#x2014;O bonds is canceled, thereby enabling to minimize the polarization in a capacitive insulating film. As a result, a silicon oxynitride film with a small voltage secondary coefficient is formed, and is applied as a capacitive insulating film for use in a MIM capacitor. Specifically, the refractive index 'n' of the silicon oxynitride film satisfies 1.47&#x2266;n&#x2266;1.53, for light with a wavelength of 633 nm.

Transistor with MIM (Metal-Insulator-Metal) capacitor

When a tungsten film () is embedded inside of a conductive groove (A) formed in a wafer (W) and a silicon oxide film () thereon and having a high aspect ratio, film formation and etch back of the tungsten film () are successively performed in a chamber of the same apparatus, therefore, a film thickness of the tungsten film () deposited in one film formation step is made to be thin. Whereby problems, such as exfoliation of the tungsten film (), generation of micro-cracks, and occurrence of warpage and cracks of the wafer (W), are avoided.

Manufacturing method of semiconductor device

Growing community of inventors

Ome, Japan

Akira Otaguro