Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Akira Ohmae

Yusuke Kataoka

Goshi Biwa

Tatsuo Ohashi

Ippei Nishinaka

Katsunori Yanashima

Tomonori Hino

Michinori Shiomi

Noriyuki Futagawa

Takao Miyajima

Takaaki Ami

Shigetaka Tomiya

Hironobu Narui

Izuho Hatada

Yuuji Hiramatsu

Katsuhiro Tomoda

Nobukata Okano

Norifumi Kikuchi

Sayaka Aoki

Masayuki Arimochi

Gen Sakoda

Jugo Mitomo

Nobuhiro Suzuki

Yuki Maeda

Hiroki Naito

Toshio Fujino

Yusuke Oyama

Kota Tokuda

Takashi Tange

Hideyuki Nishioka

Atsushi Yasuda

Nobutaka Okano

Tsuyoshi Sahoda

A light-emitting device of one embodiment of the present disclosure includes: a light source section including a surface light source; a light reflective film that covers a surface of the light source section and has one or more openings on a light outputting surface of the light source section; and a reflecting structure that is provided on side of the light outputting surface of the light source section and has one or more light reflecting surfaces around the one or more openings, the one or more light reflecting surfaces reflecting light outputted from the one or more openings in a predetermined direction.

Light-emitting device and image display apparatus

There is provided a display device including a plurality of unit regions disposed adjacent to each other, a first region that is provided in each of the unit regions, and emits first light, and a second region that is provided outside the first region in each of the unit regions, and emits second light. The second light is different from the first light in at least one of luminance, wavelength, or surface-reflection component, the second regions are provided between adjacent ones of the first regions, and a difference in luminance, wavelength, or surface-reflection component between the second light to be emitted from adjacent ones of the unit regions is smaller than a difference in luminance, wavelength, or surface-reflection component between the first light and the second light in a same one of the unit regions.

Display device and electronic apparatus

A light emitting device of one embodiment of the present disclosure includes: a substrate; a light emitting element disposed above the substrate, and having electrodes on respective upper surface and lower surface of the light emitting element; and a light shielding layer provided between the substrate and the light emitting element.

Light emitting device and display apparatus

A light emitting device including a light emitting layer that is provided between a first face and a second face, a first electrode that is provided on the first face and is electrically coupled to the light emitting layer, a second electrode that is provided on the second face and is electrically coupled to the light emitting layer, and a non-selected electrode that is provided on the first face and is in a state not electrically coupled to a potential supply source.

Light emitting device and display

[Object] A light-emitting element includes: a semiconductor layer; a first electrode portion; a second electrode portion; a first insulating layer; and a metal layer. The semiconductor layer includes an active layer, a first-conductivity-type layer, and a second-conductivity-type layer, and has a semiconductor-layer side surface including a side surface of the active layer, a side surface of the first-conductivity-type layer, and a side surface of the second-conductivity-type layer. The first electrode portion is connected to the first-conductivity-type layer. The second electrode portion is connected to the second-conductivity-type layer. The first insulating layer is in contact at least with a part of the semiconductor-layer side surface, the part of the semiconductor-layer side surface corresponding to a part of the side surface of the active layer. The metal layer is in contact at least with an opposed surface of the first insulating layer, the opposed surface of the first insulating layer facing the side surface of the active layer. The metal layer is conducted to the first electrode portion and insulated from the second electrode portion.

Light-emitting element, light-emitting unit, light-emitting panel device, and method for driving light-emitting panel device

A light-emitting device assembly includes a light-emitting device including a light-emitting layer, a first electrode, and a second electrode, and a first connecting portion and a second connecting portion provided on a base, in which the first connecting portion and the second connecting portion are separated from each other by a separation portion, the base is exposed from the separation portion, a wide portion is on a first connecting portion side of the separation portion, the first electrode includes a first portion and a second portion, the second portion of the first electrode is connected to the first connecting portion, the first portion of the first electrode extends from the second portion of the first electrode, and an orthographic projection image of the first portion of the first electrode with respect to the base and the wide portion of the separation portion overlap with each other at least in part.

Light-emitting device assembly, method of producing the same, and display apparatus

A light emitting device includes a light emitting part, a black layer, and a light diffusion partthat is formed on or above the black layer. The black layeris provided with an opening partthat allows light emitted from the light emitting part to pass through it. Then, light having passed through the opening partpasses through the light diffusion part

[Solving Means] A semiconductor unit includes a substrate, a semiconductor device, and a plating layer. The semiconductor device includes a semiconductor layer and one or more electrodes, the one or more electrodes being connected to the semiconductor layer and including a platinum-group element as a main material. The plating layer bonds the substrate and the electrode.

Semiconductor unit, semiconductor device, light-emitting apparatus, display apparatus, and method of manufacturing semiconductor device

There is provided a light emitting apparatus, including a plurality of light emitting elements having biased light properties; and a mounting substrate where the light emitting elements are arranged such that the biased light properties are complemented within a group including at least two light emitting elements among a plurality of the light emitting elements. Also, there are provided a light emitting unit, a display apparatus, an electronic device and a light emitting element using a plurality of point light sources.

Light emitting apparatus, light emitting unit, display apparatus, electronic device and light emitting element

A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

Nitride-based III-V group compound semiconductor

Method for growing a nitride-based III-V Group compound semiconductor

Method for growing a nitride-based III-V group compound semiconductor

In a method for manufacturing a semiconductor device, the method includes the step of growing a nitride-based III-V compound semiconductor layer, which forms a device structure, directly on a substrate without growing a buffer layer, the substrate being made of a material with a hexagonal crystal structure and having a principal surface that is oriented off at an angle of not less than &#x2212;0.5&#xb0; and not more than 0&#xb0; from an R-plane with respect to a direction of a C-axis.

Method for manufacturing semiconductor device and semiconductor device

Growing community of inventors

Kanagawa, Japan

Akira Ohmae