Mitsubishi Denki Kabushiki Kaisha

Akira Ohhisa

Shigeru Harada

Hiroshi Adachi

Etsushi Adachi

Hirozoh Kanegae

Kimio Hagi

Hiroshi Mochizuki

Kazuhito Matsukawa

Masanori Obata

Takemi Endoh

The present invention is mainly characterized by providing an even surface of an interlayer insulating film for insulating and isolating an upper interconnection and a lower interconnection from each other. A lower interconnection layer is provided on a semiconductor substrate, having a pattern of stepped portions. A silicon type insulating film is provided on the semiconductor substrate so as to cover the lower interconnection layer. A silicon ladder resin film is filled in recessed portions of the surface of the silicon type insulating film for making even the surface of the silicon type insulating film. An upper interconnection layer electrically connected to the lower interconnection layer through a via hole is provided on the silicon type insulating film. The silicon ladder resin film has the structural formula: ##STR1## where R.sub.1 is at least one of a phenyl group and a lower alkyl group, R.sub.2 is at least one of a hydrogen atom and a lower alkyl group, and n is an integer of 20 to 1000.

Semiconductor device and manufacturing method thereof

Growing community of inventors

Hyogo, Japan

Akira Ohhisa