Fuji Photo Film Company, Limited

Spansion Llc.

Powerchip Technology Corporation

Toyota Jidosha Kabushiki Kaisha

Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Rayon Company, Limited

Denso Corporation

Meijo University

Denso Wave Corporation

Ricoh Company, Ltd.

Sap Ag

Toppan Printing Co., Ltd.

Sapnsion LLC

Green Monster Co., Ltd.

Akira Ogawa

Akira Sato

Masaru Yano

Masanao Hinata

Haruo Takei

Kozo Aoki

Masatoshi Sugiyama

Keisuke Shiba

Toshio Matsumoto

Hiroshi Baba

Shiro Ogura

Masahiro Mizuno

Osami Tanabe

Keiichi Adachi

Hitoshi Yamamoto

Ryuji Funayama

Jun Sato

Makoto Umemoto

Osami Yamamoto

Hideki Banno

Kensaku Asahi

Keiichi Yamada

Tadashi Ikeda

Naoki Saito

Mitsuru Yamamoto

Kazuhiko Ito

Hiroshi Fukuzawa

Mototada Sakashita

Yuichi Tanaka

Kazuhiko Itoh

Shinichi Imai

Yasutaka Nakashima

Tomomichi Hino

Masanaga Ohki

Hirotetu Kato

Hiroyuki Hoshino

Eiichi Kato

Morio Yagihara

Masakazu Morigaki

Keiji Mihayashi

Masao Taguchi

Shigeo Hirano

Seiji Ichijima

Nobuo Seto

Hideki Arakawa

Masaaki Igarashi

Yoshio Ishii

Naoharu Shinozaki

Akihiro Matsufuji

Jun Sasaki

Tadao Shishido

Kotaro Nakamura

Yuji Mihara

Kei Sakanoue

Shinpei Ikenoue

Takao Masuda

Hisashi Satonaka

Toshiyuki Watanabe

Nobuo Sakai

Takayoshi Kamio

Akira Umehara

Fujio Kakimi

Yukio Yokota

Reiichi Ohi

Hajime Nakagawa

Satoshi Nagaoka

Tetsuo Yoshioka

Kazuo Ito

Keisuke Suga

Masakazu Maekawa

Tsutomu Nakai

Daisuke Kawase

Nobuyuki Tsujino

Mario Aoki

Atsuo Iwamoto

Tomoya Takatani

Toshiaki Asano

Takao Minato

Hirota Touma

Syunichi Kondoh

Yasuhiro Kabu

Nobuhiko Ito

Hiroshi Sawaguchi

Atsuko Sugano

Yoshitaka Noda

Yasuharu Nakamura

Toshihiro Sato

Motoki Kanada

Kazutaka Yoshida

Kouichi Hanaki

Satoshi Ide

Daisuke Yui

Hajime Aoki

Momotoshi Tsuda

Noritaka Yatsuya

Hajime Ohnishi

Yoshio Kawamura

Seiji Miyazaki

Ichiro Nakanishi

Yasumasa Akimoto

There is provided a prediction device that analyzes a chart image indicating price fluctuations of a financial instrument and predicts a future price of the financial instrument, the prediction device including an image acquiring unit that acquires a prediction target image to be a prediction target of the future price, an outputting unit that inputs the prediction target image to a learned model and outputs type data serving as a type of a chart included in the prediction target image from the learned model, and a predicting unit that outputs a predicted value of the future price based on a price after a lapse of a predetermined period from the type data.

Prediction device, prediction method, prediction program

A semiconductor device production method includes performing trench etching to form a trench in a thickness direction of a semiconductor layer so that both of a first pattern portion and a second pattern portion whose side walls face each other across the trench are formed. In the trench etching, the semiconductor layer is etched and removed while a protective film is formed on a surface of the semiconductor layer, and the trench etching is performed so that the first pattern portion and the second pattern portion are configured to have a same potential or a same temperature during the trench etching.

Method of production of semiconductor device having semiconductor layer and support substrate spaced apart by recess

In a robot control system, the distance from an operating region of a robot arm to a person who is approaching the region is measured using a laser sensor. Information necessary to acquire a safety skill level that is stored in an RFID tag possessed by the person is acquired using an RFID reader. A controller classifies distances into a short distance, which is a distance within the operating region of the arm, a long distance, which is a distance that exceeds a movable region of the arm, and an intermediate distance, which is a distance between the short distance and the long distance. The motion of the arm is controlled by the controller, depending on the distance (i.e., the long distance, the intermediate distance, or the short distance) and the safety level.

Method and system for controlling robot

A robot operation apparatus includes touch panel, touch operation detecting unit, action command generating unit, and selection operation detecting unit. The action command generating unit is capable of performing an operation determining process and an action command generating process. The operation determining process is a process for determining a drive axis or an action mode of a robot to be operated based on the selection operation detected by the selection operation detecting unit, and when a touch operation detected by the touch operation detecting unit is a drag operation, determining a movement amount of the drag operation. The action command generating process is a process for determining a movement amount of the robot based on the movement amount determined by in the operation determining process, and generating an action command for moving the robot at the drive axis or in the action mode to be operated by the movement amount.

Robot operation apparatus, robot system, and robot operation program

A capacitance type physical quantity sensor including a movable electrode formed in a weight part, and a fixed electrode facing the movable electrode is provided. A first movable sensing electrode and a first fixed sensing electrode face each other in a first y direction. A second movable sensing electrode and a second fixed sensing electrode face each other in a second y direction. A first movable damping electrode is located in the middle between two first fixed damping electrodes, faces one of the first fixed damping electrodes in the first y direction and faces the other of the first fixed damping electrodes in the second y direction. A plurality of the first movable damping electrodes are located point-symmetrically with respect to the center of the weight part or line-symmetrically with respect to a center line passing the center in the y direction.

Capacitance type physical quantity sensor

The disclosure provides an internal power supply voltage auxiliary circuit for an internal power supply voltage generating circuit, wherein the internal power supply voltage generating circuit includes: a differential amplifier, comparing an internal power voltage supplied to a loading circuit with a predetermined reference voltage, and outputting a control voltage from an output terminal; and a driving transistor, driving an external power voltage according to the control voltage. The internal power supply voltage auxiliary circuit includes: a time sequence detecting circuit, detecting a transition of a data signal, generating and outputting a detecting signal; and an internal power voltage auxiliary supplying circuit, auxiliary supplying a current for the loading circuit based on the detecting signal. Therefore, it is possible to output an internal power voltage stably, while power consumption would not increase greatly, even when being used in the semiconductor memory device with the DDR.

Internal power supply voltage auxiliary circuit, semiconductor memory device and semiconductor device

A writing circuit for a non-volatile memory apparatus is provided. The non-volatile memory apparatus includes a control circuit determining that a programming process of each memory cell is finished when performing data writing. An on/off state of a first switch is controlled according to data stored by a memory component, wherein the memory component stores a programming verify status of the corresponding memory cell. A determination control MOS transistor performs a determination control on a programming validation. A second switch applies a voltage for controlling the determination control MOS transistor to a gate of the determination control MOS transistor according to a determination control signal and sets a gate voltage of the determination control MOS transistor to a voltage value equal to a threshold voltage of the determination control MOS transistor plus a predetermined control voltage value.

Non-volatile memory apparatus and writing circuit and method for non-volatile memory apparatus

A sound source detecting system that detects a predetermined sound source on the basis of sounds collected by sound collectors includes: a noise extracting unit that extracts a noise from signals of the collected sounds; and a noise suppressing unit that suppresses a signal component of the noise extracted by the noise extracting unit from the signals of the collected sounds. The sound source detecting unit detects a location of the predetermined sound source, such as an approaching vehicle, using information about the sounds having the signals of which the noise is suppressed.

Sound source detecting system and sound source detecting method

The invention is an internal power voltage generating circuit, adjusted such that an internal power voltage becomes the reference voltage. The internal power voltage generating circuit further includes: a charge share circuit, including a charging capacitor, an initial voltage adjusting circuit and a charge reset circuit. The charging capacitor is connected to a differential amplifier via a switch circuit, and is charged by charges of a control voltage. The initial voltage adjusting circuit adjusts and applies an initial voltage to the charging capacitor. The charge reset circuit discharges the charging capacitor. When the internal power voltage is lower than a reference voltage, the charging capacitor having the initial voltage is connected to the differential amplifier, and the charges of the control voltage are transferred to the charging capacitor during a transfer period.

Internal power voltage generating circuit, semiconductor memory device and semiconductor device

An approaching vehicle detecting system that detects an approaching vehicle on the basis of sounds collected by a plurality of sound collectors mounted on a host vehicle determines whether a transverse moving direction of a sound source detected by the plurality of sound collectors is a direction approaching the host vehicle, determines whether a vertical position of the sound source detected using the plurality of sound collectors is in the same plane as that of the host vehicle, and detects that sound source as the approaching vehicle when it is determined that the transverse moving direction of the sound source is the direction approaching the host vehicle and the vertical position of the sound source is in the same plane as that of the host vehicle.

Approaching vehicle detecting system and approaching vehicle detecting method

A sound source detection system for detecting a sound source (e.g., running sound of a vehicle) based on sound collected by microphones extracts characteristic amounts from the sound collected by the microphones, sets a plurality of classes according to the position of the sound source by a multi-class pattern recognition method (e.g., multi-class SVM) using the characteristic amounts, extracts characteristic amounts from sound collected by the microphones for detection of a sound source, determines a class to which the extracted characteristic amounts belong, from the preset plurality of classes, and estimates the sound source based on the class.

Sound source detection system

A semiconductor chip Dof a flash memory which is stacked together with other semiconductor chips D&#x2dc;DN to form a multi-chip package (MCP), including a memory cell arrayof the flash memory for storing an ID code and an upper address, wherein the ID code is written into the a fuse data regionF of the memory cell arraybefore the assembly process. According to the invention, ID codes and upper addresses can be assigned and written to each of the semiconductor chips of a multi-chip package easily without increasing the size of the semiconductor chips in comparison with the prior art.

Semiconductor memory device and writing method of ID codes and upper addresses

A level shift circuit, for outputting a data output signal with a second level via an output inverter after a data input signal with a first level is stored in a latch, includes a level set circuit, when the output data signal outputs with a low level, setting the output data signal to a low level in response to a change of the input data signal. The level set circuit is connected to an output terminal of the output inverter, and has an NMOS transistor having a drain electrode and a source electrode coupled to a ground, wherein the NMOS transistor turns on in response to the input data signal with a high level.

Level shift circuit and semiconductor device using level shift circuit

The present invention provides a semiconductor memory and a control method therefor, the semiconductor device including a first current-voltage conversion circuit connected to a core cell provided in a nonvolatile memory cell array, a second current-voltage conversion circuit connected to a reference cell through a reference cell data line, a sense amplifier sensing an output from the first current-voltage conversion circuit and an output from the second current-voltage conversion circuit, a compare circuit comparing a voltage level at the reference cell data line with a predefined voltage level, and a charging circuit charging the reference cell data line, if the voltage level at the reference cell data line is lower than the predefined voltage level during pre-charging the reference cell data line. According to the present invention, the pre-charging period of the reference cell data line can be shortened, and the data read time can be shortened.

Semiconductor device and control method of the same

TASK: to provide an internal voltage trimming circuit having a simple configuration and operated by a consumption current smaller than that using a comparator. MEANS FOR SOLVING THE PROBLEM: An internal voltage trimming circuit comprises a trimming controller using a change in a counting value of a clock according to a current flowing through a transistor of a power supply current source for a clock generator to trim an internal voltage generated by an internal voltage generator. The trimming controller counts a first counting value of the clock when a predetermined reference voltage is applied to a control terminal of the transistor and a second counting value of the clock when the internal voltage is applied to the control terminal of the transistor and controls the internal voltage generated by the internal voltage generator to substantially coincide the second counting value with the first counting value.

Internal voltage trimming circuit, method thereof and semiconductor circuit device comprising the same

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Tokyo, Japan

Akira Ogawa