Mitsubishi Denki Kabushiki Kaisha

Akira Nishimoto

Hiroshi Tanaka

Satoru Kotoh

Naohiko Fujino

Masashi Ohmori

Hiroshi Sasai

Eiichi Arima

Shinichi Jintate

Kazutoshi Oku

Kazuo Sudo

Natsuro Tsubouchi

Kirokazu Moyoshi

A semiconductor cleaning apparatus includes a cassette loader/unloader for moving a cassette; a product loader/unloader for loading a wafer into and unloading a wafer from a cassette; a cleaner for cleaning a wafer; a water cleaner for cleaning with water a wafer that has been cleaned in the cleaner; a dryer for drying the wafer that has been cleaned with water in the water cleaner; and a conveyance having a wafer grasping hand for directly holding a wafer unloaded from a cassette and sequentially conveying the wafer held by the wafer hand to the cleaner, the water cleaner, and the dryer.

Semiconductor cleaning apparatus and wafer cassette

A semiconductor cleaning apparatus having: a loader/unloader portion for injecting/ejecting a product cassette which accommodates a wafer; a product injecting/ejecting portion for injecting/ejecting the wafer from the product cassette; a cleaning portion for cleaning the wafer; a water cleaning portion for, with water, cleaning the wafer which has been cleaned in the cleaning portion; a drying portion for drying the wafer which has been cleaned with water in the water cleaning portion; and a conveyance portion having a wafer hand for directly holding the wafer ejected from the product cassette in the product injecting/ejecting portion and sequentially conveying the wafer held by the wafer hand to the cleaning portion, the water cleaning portion and the drying portion.

A method for manufacturing an EEPROM comprises the step of using raw gas containing an organic compound having a molecular weight of more than 44, such as ethyl acetate and tetrahydrofuran when a first polysilicon layer serving as a select gate electrode and a second polysilicon layer serving as a floating gate electrode are deposited by a CVD process. The above described step allows a voltage at the time of tunneling electrons to be decreased.

Electrical erasable and programmable read-only memory and manufacturing

An oxidizing tube encircled by an electric heater is disposed within a pressure envelope. A high pressure inert gas is supplied to the envelope and tube while hydrogen and oxygen are supplied to the tube while being kept at an elevated temperature to react with each other to form steam. The steam oxidizes the surfaces of silicon wafers placed in the tube to form silicon dioxide films on them. Alternatively a water evaporator may be disposed within the pressure envelope to directly supply steam to the tube with the high pressure gas aiding the supply of the steam.

Manufacturing apparatus for semiconductor devices

Growing community of inventors

Itami, Japan

Akira Nishimoto