Catalysts & Chemicals Industries Co., Ltd.

Jgc Catalysts & Chemicals Ltd.

Other

Fujitsu Corporation

Nippon Steel Corporation

Nippon Telegraph and Telephone Corporation

Akira Nakashima

Michio Komatsu

Miki Egami

Kazuaki Inoue

Ryo Muraguchi

Kazuhiro Nakayama

Hiroyasu Nishida

Yoshinori Wakamiya

Atsushi Tonai

Ei Yano

Katsumi Suzuki

Yoshihiro Nakata

Katsuyuki Machida

Toshiharu Hirai

Tsuguo Koyanagi

Hakaru Kyuragi

Goro Sato

Masayuki Matsuda

Yoneji Abe

Kazuo Imai

Osamu Yoshida

Yukihiro Iwasaki

Hiroki Arao

Hiroo Yoshidome

Yoko Yamaguchi

Shunji Tsuruta

Teruaki Yogo

Eiji Tsuru

Masaharu Oka

Seijun Higuchi

Yuji Tawarazako

Haruyuki Nagayoshi

Shogo Kanazawa

Naoyuki Seriu

Kazunari Yamato

Toshio Akiyama

Kazumi Sagara

Ryusuke Inoue

Tohru Watanabe

Susumu Nakazawa

Mami Tokunaga

Michio Kimatsu

Kenji Ohno

Kuniharu Teramoto

Ei c/o Fujitsu Limited Yano

Yoshihiro Fujitsu Limited Nakata

Chabazite zeolites have a problem of low hydrothermal resistance. By steam treating a chabazite zeolite having a silica-alumina ratio and a crystallinity that are within certain ranges, a chabazite zeolite having a high crystallinity and a high hydrothermal resistance can be obtained.

Chabazite zeolite with high hydrothermal resistance and method for producing same

An object of the present invention is to provide a chabazite zeolite which does not easily peel from a substrate such as a honeycomb body even when the substrate has been coated therewith, while exhibiting excellent durability. The present invention relates to a chabazite zeolite for substrate coating, which includes (i) to (iv) below.

Chabazite zeolite for substrate coating

A method for producing a high purity silica sol is provided. This method has enabled use of water glass for the starting material, and the resulting silica sol has a reduced metal impurity Cu and Ni content compared to conventional methods. The method comprises (1) ultrafiltration of an aqueous solution of an alkali silicate; (2) ion exchange process for removal of at least a part of cationic components in the purified aqueous solution of an alkali silicate; (3) another ion exchange process using a chelating ion exchange resin to obtain high purity silicate solution; and (4) adjustment of a part of the high purity silicate solution (seed solution) to alkaline pH and mixing of this solution with another part of the solution (feed solution) to produce a high purity silica sol having a Cu concentration and a Ni concentration (in relation to the dry silica) of up to 50 ppb.

High purity silica sol and its production method

A coating liquid for forming a low dielectric constant amorphous silica-based coating film with a dielectric constant of 3.0 or below and a film strength (Young's modulus) of 3.0 GPa or more, and also having a smooth surface with an excellent hydrophobicity. The coating liquid contains (1) a silicon compound obtained by hydrolyzing bis(trialkoxysilyl)alkane (BTASA) and alkoxysilane (AS) in the presence of tetraalkylammoniumhydroxide (TAAOH), or (2) a silicon compound obtained by hydrolyzing bis(trialkoxysilyl)alkane (BTASA), alkoxysilane (AS) and tetraalkylorthosilicate (TAOS) in the presence of tetraalkylammoniumhydroxide (TAAOH).

Coating liquid for forming low dielectric constant amorphous silica-based coating film and the coating film obtained from the same

In producing nodular silica sol, a polymerized silicic acid solution with viscosity of silicic acid from 0.9 to 100 mPa&#xb7;s is prepared by aging a silicic acid solution with pH from 1.0 to 7.0 and silica concentration from 0.05 to 3.0% by weight at a temperature from 1 to 98&#xb0; C. Then, a seed liquid is prepared by adding an alkali to the polymerized solution to adjust the pH from 10 to 12.5 and heating the resultant mixture solution at a temperature from 50 to 150&#xb0; C. According to necessity, an alkali is added to the obtained seed liquid to adjust the pH in from 9 to 12.5. Finally, a silicic acid solution or a highly purified silicic acid solution is dropped to the seed liquid at a temperature from 20 to 98&#xb0; C. continuously or intermittently for building up.

Method of producing nodular silica sol

A method of forming on a substrate an amorphous silica-based coating film having a low dielectric constant of 3.0 or below and a film strength (Young's modulus) of 3.0 GPa or more, which comprises, as a typical one, the steps of; (a) coating on the substrate a liquid composition containing hydrolysate of an organic silicon compound or compounds hydrolyzed in the presence of tetraalkylammonium hydroxide (TAAOH); (b) setting the substrate in a chamber and then drying a coating film formed on the substrate at a temperature in the range from 25 to 340&#xb0; C.; (c) heating the coating film at a temperature in the range from 105 to 450&#xb0; C. with introduction of a superheated steam having such a temperature into the chamber, and (d) curing the coating film at a temperature in the range from 350 to 450&#xb0; C. with introduction of a nitrogen gas into the chamber.

Method for forming amorphous silica-based coating film with low dielectric constant and thus obtained amorphous silica-based coating film

The present invention provides a sol of spinous inorganic oxide particles not containing coarse particles, in which particles having extremely homogeneous particles are dispersed in a solvent. An acidic silicic acid is added to a dispersion liquid of core particles to grow core particles, and then again the acidic silicic acid is added at the addition rate 1.2 to 1.8 higher than that in the previous step to prepare a sol of spinous inorganic oxide particles. Then the sol is subjected to centrifugation to remove coarse particles having the diameter of 800 nm or more, thus spinous inorganic oxide particles having peculiar form such as a spinous one being obtained.

Sol of spinous inorganic oxide particles, method of producing the sol, and polishing agent containing the sol

The present invention provides a sol of spinous silica-based particles in which silica-based particles having peculiar forms, spinous forms are dispersed in a solvent. The spinous silica-based particles have verrucous projections formed on surfaces of spherical silica-based particles. In the spinous particles, a value of the surface roughness (SA/SASAindicating a specific surface area measured by the BET method or the Sears method and SAindicating a specific surface area converted from an average particle diameter (D) measured by the image analysis method) is in the range from 1.7 to 10. Furthermore the average diameter (D) measured by the image analysis method is in the range from 7 to 150 nm.

Spinous silica-based sol and method of producing the same

The present invention relates to a coating liquid for forming an amorphous silica-based coating film with a low dielectric constant of 2.5 or below and the Young's modulus of 6.0 GPa or more and having excellent hydrophobic property, and to a method of preparing the same. The coating liquid may contain a silicon compound obtained by hydrolyzing tetraalkyl ortho silicate (TAOS) and specific alkoxysilane (AS) in the presence of tetraalkyl ammonium hydroxide (TAAOH), or may contain a silicon compound obtained by hydrolyzing or partially hydrolyzing tetraalkyl ortho silicate (TAOS) in the presence of tetraalkyl ammonium hydroxide (TAAOH), mixing the reaction product with specific alkoxysilane or a hydrolysate or a partial hydrolysate thereof, and hydrolyzing all or a portion of the mixture according to the necessity. In addition, the coating liquid is prepared by mixing components described above at a specific ratio and under specific process conditions.

Coating liquid for forming amorphous silica-based coating film with low dielectric constant

Disclosed is a coating liquid for forming a protective film having high film strength and a low specific dielectric constant for semiconductor processing, and a method for preparing the coating liquid. The coating liquid is a liquid composition comprising (a) silicon compound obtained by hydrolyzing tetraalkyl orthosilicate (TAOS) and alkoxysilane (AS) in the presence of tetraalkyl ammonium hydroxide (TAAOH) and water, or a silicon compound obtained by hydrolyzing or partially hydrolyzing tetraalkyl orthosilicate (TAOS) in the presence of tetraalkyl ammonium hydroxide (TAAOH) and water, mixing the hydrolyzed or partially hydrolyzed product with alkoxysilane (AS) or a hydrolyzed or partially hydrolyzed product thereof, and hydrolyzing all or a portion of the mixture, (b) an organic solvent, and (c) water. The coating liquid is characterized in that a quantity of water contained in the liquid composition is in the range from 35 to 65% by weight.

Coating liquid for formation of protective film for semiconductor processing and method for preparation of the same

Porous silica-based particles with relatively larger average diameter of 1 micron or more and a low particle density are prepared. The method includes the steps of (a) preparing two-layer separated liquid including an organic silicon compound layer and a water layer, then adding an organic solvent, an alkali, and a surfactant into the water layer while agitating at least the water layer so that the organic silicon compound layer and the water layer are not completely mixed with each other, further hydrolyzing and/or partial hydrolyzing the organic silicon compound in the mixed aqueous solution to prepare silica-based particle precursors, (b) adding sodium aluminate into the mixed aqueous solution containing the silica-based particle precursors and then preparing silica-based particles having pores, cavities or voids inside the particles, and (c) washing and drying the silica-based particles. The particles are useful for various applications such as microcapsules, adsorbents, catalysts, and so on.

Method of producing porous silica-based particles

The present invention relates to an amorphous silica-based coating film with a low specific dielectric constant of 2.5 or below and the Young's modulus of 6.0 GPa or more and having excellent hydrophobic property, and to a method of forming the same. A liquid composition containing a silicon compound obtained by hydrolyzing tetraalkyl ortho silicate (TAOS) and specific alkoxysilane (AS) in the presence of tetraalkyl ammonium hydroxide (TAAOH) is prepared. The liquid composition is then applied on a substrate, heated and cured to obtain a coating film. The coating film obtained as described has a smooth surface and also has specific micropores therein.

Method of forming amorphous silica-based coating film with low dielectric constant and thus obtained silica-based coating film

A coating liquid for forming a silica-containing film with a low-dielectric constant which enables formation of low-density film having a dielectric constant as low as 3 or less and having excellent resistance to oxygen plasma and process adaptation but also in the adhesion to a substrate and film strength. A substrate coated with the silica-containing film having the above characteristics, obtained by the use of the above coating liquid. The coating liquid for forming a silica-containing film with a low-dielectric constant comprises a polymer composition mainly constituted by a polysiloxane and a readily decomposable resin, said polysiloxane being a reaction product between fine particles of silica and a hydrolyzate of at least one alkoxysilane represented by the following formula (I): XSi(OR), wherein X represents a hydrogen atom, a fluorine atom, an unfluorinated or fluorinated alkyl group of 1 to 8 carbon atoms, an aryl group or a vinyl group; R represents a hydrogen atom, an alkyl group of 1 to 8 carbon atoms, an aryl group or a vinyl group; and n is an integer of 0 to 3.

Substrate coated with silica-containing film with low-dielectric constant

Silica particles for polishing have a three-dimensional polycondensation structure with an average particle diameter in a range from 5 to 300 nm. The silica particles have residual alkoxy groups therein and a carbon content in a range from 0.5 to 5 weight % retained in the residual alkoxy groups.

Silica particles for polishing and a polishing agent

Coating liquid for forming a silica-containing film with a low-dielectric constant

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Kitakyushu, Japan

Akira Nakashima