University of Sheffield

Powdec K.k.

Akira Nakajima

Sankara Narayanan Ekkanath Madathil

Hiroji Kawai

Yasunobu Sumida

A semiconductor device comprises three semiconductor layers. The semiconductor layers are arranged to form a 2DHG and a 2DEG separated by a polarization layer. The device comprises a plurality of electrodes: first and second electrodes electrically connected to the 2DHG so that current can flow between them via the 2DHG and a third electrode electrically connected to the 2DEG so that when a positive voltage is applied to the third electrode, with respect to at least one of the other electrodes, the 2DEG and the 2DHG will be at least partially depleted.

Semiconductor devices with 2DEG and 2DHG

A low-loss GaN-based semiconductor device is provided. The semiconductor device has the InGaN layer (where 0&#x2266;z&#x3c;1), the AlGaN layer (where 0&#x3c;x&#x3c;1), the InGaN layer (where 0&#x2266;y&#x3c;1) and the p-type InGaN layer (where 0&#x2266;w&#x3c;1) which are sequentially stacked on a base substrate of a C-plane sapphire substrate, etc. At a non-operating time, the two-dimensional hole gas is formed in the InGaN layer in the vicinity part of a hetero-interface between the AlGaN layer and the InGaN layer, and the two-dimensional electron gas is formed in the InGaN layer in the vicinity part of a hetero-interface between the InGaN layer and the AlGaN layer.

Growing community of inventors

Aichi, Japan

Akira Nakajima