Mitsubishi Materials Corporation

Mitsubishi Materials Electronic Chemicals Co., Ltd.

Akira Nakabayashi

Yoshirou Kuromitsu

Motohiko Yoshizumi

Kunio Sugamura

Seiji Toyoda

Shigeharu Sasaki

Maki Yamaguchi

Kazutoshi Yamamoto

This silver-coated spherical resin includes: a spherical resin; and silver coated on a surface of the spherical resin, wherein an amount of the silver is in a range of 2 to 80 parts by mass with respect to 100 parts by mass of the silver-coated spherical resin, and a crystallite diameter of the silver measured by X-ray diffractometry is in a range of 18 to 24 nm. This method for producing a silver-coated spherical resin includes: a process of subjecting a spherical resin to a pretreatment using an aqueous solution of a tin compound; and a subsequent process of subjecting the spherical resin to an electroless silver plating using a reducing agent, wherein, during the pretreatment, a temperature of the aqueous solution of the tin compound is set to be in a range of 20 to 45&#xb0; C.

Silver-coated spherical resin, method for producing same, anisotropically conductive adhesive containing silver-coated spherical resin, anisotropically conductive film containing silver-coated spherical resin, and conductive spacer containing silver-coated spherical resin

An infrared ray cut-off material is formed of phosphorus-doped antimony tin oxide powder, in which a content of antimony in terms of SbOis not less than 14 parts by mass and not more than 30 parts by mass with respect to 100 parts by mass of the infrared ray cut-off material, a content of phosphorus in terms of POis not less than 1 part by mass and not more than 25 parts by mass with respect to 100 parts by mass of the infrared ray cut-off material, and a balance other than antinomy oxide and phosphorus oxide is tin oxide.

Infrared ray cut-off material, dispersion of infrared ray cut-off material, infrared ray cut-off film-forming composition, and infrared ray cut-off film

An aluminum nitride (AlN) substrate comprising an AIN sinter, an Al.sub.2 O.sub.3 layer provided on the sinter, and a glass-mixed Al.sub.2 O.sub.3 layer which is provided on the Al.sub.2 O.sub.3 layer and contains Al.sub.2 O.sub.3 and glass mixed therewith, preferably with an oxide particle-dispersed glass layer and a main glass layer provided on the glass-mixed Al.sub.2 O.sub.3 layer. The AlN substrate has heat dissipation properties closer to those of AlN itself, does not cause generation of air bubbles at the junction interface between the AlN sinter and the glass-containing layer, and has excellent surface smoothness and corrosion resistance. The very fine conductive layer, etc. may be readily and firmly formed on the substrate in a stable manner.

Aluminum nitride substrate and method of producing the same

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Sunto-gun, Japan

Akira Nakabayashi