Hitachi-kokusai Electric Inc.

Canon Kabushiki Kaisha

Akira Morohashi

Nobushige Korenaga

Ryota Sasajima

Keishin Yamazaki

Iwao Nakamura

Ryuji Yamamoto

Takaaki Noda

Sadao Nakashima

Kojiro Yokozawa

Tadashi Kimura

Tomoharu Shimada

Junji Asahi

The present invention provides a guide apparatus including a guide member located on a base, and a moving member movable along the guide member. The guide apparatus comprising a plurality of plate members each including a portion facing the base and extending from the portion in a direction to separate from the base, wherein the plurality of plate members are located apart from each other in a direction to separate from the moving member.

Guide apparatus, exposure apparatus, and method of manufacturing article

A stage apparatus has a base; a movable portion including a stage movable relative to the base; a flexible utility line for supplying utility to the movable portion; and a cover for covering the utility line, the cover including: a housing member provided to one of the base and the movable portion, in which an opening is formed; and a sealing member provided to the other of the base and the movable portion, which is arranged opposite to a side, in which the opening is formed, of the housing member with a gap therebetween, and has a side for sealing the opening.

Stage apparatus with flexible utility line, lithography apparatus, and article manufacturing method

The present invention provides a driving apparatus including an axis member supported on a base, and a movable member movable along the axis member, comprising a plurality of plate members each including a through-hole through which the axis member penetrates and surrounding the axis member, wherein the plurality of plate members are located apart from each other in a moving direction of the movable member.

Driving apparatus, exposure apparatus, and method of manufacturing article

A heat treatment apparatus wherein a nozzle is accurately provided on an adaptor to prevent the nozzle from interfering with other part items and a possibility of breakage due to heat expansion of the nozzle can be reduced. The heat treatment apparatus () is provided with a reaction tube () for treating a substrate (), a quartz adaptor () for supporting the reaction tube (), a nozzle () connected to the adaptor () for supplying a treatment gas into the reaction tube (), and a heater () provided outside the reaction tube () for heating inside the reaction tube (). The nozzle () is connected to an upper plane of the adaptor () in the reaction tube () at least a part which is of the nozzle () and is connected with the adaptor () is made of quartz and other nozzle parts are made of silicon carbide.

Heat treatment apparatus and method of manufacturing substrates

A heat-treating apparatus capable of realizing a highly precise processing maintaining a high degree of safety, and a method of producing substrates are provided. The heat-treating apparatus comprises a reaction tube for treating substrates; a manifold for supporting the reaction tube; and a heater provided surrounding the reaction tube to heat the interior of reaction tube; wherein the reaction tube and the manifold are in contact with each other as their continuous flat surfaces come in contact with each other; a cover member is provided to cover the contact portion between the reaction tube and the manifold from the outer side; and the cover member is provided with at least either a gas feed port or an exhaust port communicated with a space formed among the cover member, the reaction tube and the manifold.

Heat-treating apparatus and method of producing substrates

Heat treatment apparatus and a method of manufacturing a substrate are provided, in which drop of particles produced by a rubbing action between a support strip and a support member can be prevented. Heat treatment apparatushas a reactorfor treating a substrate, and a support toolfor supporting the substratein the reactor. The support toolhas a support partto be contacted to the substrate, and a support stripfor supporting the support part. A back of the support parthas a convex portion or a concave portion, and the back of the support partis configured to be not contacted to an edge of the support strip, and contacted to a top of the support stripat inner than the edge of the support strip

Heat treatment apparatus and method of manufacturing substrate

A semiconductor device fabricating method for forming a boron doped silicon film includes the step of forming the boron doped silicon film on a substrate at an inner temperature of the reaction furnace ranging from about 460 to 600&#xb0; C. or at an average velocity of reaction gases in the reaction furnace being not great than about 2200 cm/min. Further, a substrate processing apparatus for forming a boron doped silicon film on a substrate includes a gas supply line for supplying BClto the reaction furnace. The gas supply line is installed in a portion of the reaction furnace opposite to a heater, and has an outlet for discharging BCl. The outlet of the gas supply line is provided at an upstream side of gas flow in the reaction furnace.

Growing community of inventors

Utsunomiya, Japan

Akira Morohashi