Kabushiki Kaisha Komatsu Seisakusho

Komatsu Corporation

Mitsubishi Gas Chemical Company, Inc.

Kabushiki Kaisha Seisakusho

Akira Mori

Yukihiro Tsuda

Yukinori Matsumura

Taku Yamazaki

Takashi Suzuki

Takeshi Koyama

Teiichirou Chiba

Takamasa Kawakami

Rieko Nakano

Yoshinori Saito

Kansei Izaki

Masami Orisaku

Ikuo Uchino

Atsuhiko Hirosawa

Koji Yamamoto

Masashi Ichihara

Tomomichi Kanda

Toshio Watanabe

Teruyuki Ninomiya

Atsushi Iwamoto

Hideaki Okubo

Koji Yoshida

Takaki Ikebe

Hirokazu Tanaka

Misao Kato

Kunihiro Yamasaki

Shigeki Hagiwara

Kunihiro Yamazaki

Ryusuke Komura

The gas-barrier multi-layer structure of the present invention comprises at least one gas-barrier layer A and at lease one thermoplastic resin layer B. The gas-barrier layer A comprises a crystallizable polyamide resin which is produced by the polycondensation of a diamine component mainly comprising m-xylylenediamine with a dicarboxylic acid component comprising a C-C&#x3b1;,&#x3c9;-linear aliphatic dicarboxylic acid and isophthalic acid in a specific proportion so as to have a particular crystallization behavior. The gas-barrier multi-layer structure is excellent in the fabricability such as deep drawing ability and can be fabricated into a highly transparent shaped article with less discoloration and malodor generation.

Gas-barrier multi-layer structure

The polyester-based resin composition of the present invention comprises a polyamide resin, a polyester resin containing an antimony compound and a compound selected from the group consisting of inorganic acid salts and hydroxides of group-1 or -2 metals of the periodic table and transition metals. In the polyester-based resin composition, the phosphorus atom concentration, the antimony atom concentration, and the blending ratio of the inorganic acid salt or hydroxide to the phosphorus compound are regulated so as to satisfy the specific relationships to effectively prevent the darkening due to the deposition of antimony metal, thereby providing the polyester-based resin composition having excellent gas barrier properties and a good appearance with minimized darkening.

Polyester-based resin composition

A dot mark having at its center a peaked portion rising from a face to be marked is provided on a cut face or ground face of a semiconductor wafer with the face to be marked having surface roughness of 0.3 &mgr;m or less. The rising dot mark is 1 to 15 &mgr;m in maximum length along the face to be marked and 0.01 to 5 &mgr;m in height. With even such a fine size, the dot mark is superior in visibility. This makes it possible to provide a semiconductor base material in which all processing histories in a process for manufacturing a semiconductor wafer and a semiconductor, wafer ID, chip ID, and manufacturing number or the like can be recognized.

Semiconductor base material having fine dot mark

A fine protruded dot-like mark is formed on part of a semiconductor wafer surface. A growth layer is grown by epitaxial treatment on an entire surface of a semiconductor wafer including the dot mark so as to form a dot mark. During this growth process, the dot-like mark is changed into a polygon pyramid shape including a clear ridge line indicating the same azimuth of the crystal axis as that of the wafer. This ridge line is optically read out so that the azimuth of the crystal axis of the wafer can be specified. Therefore, it is possible to obtain a semiconductor wafer including a dot mark having a peculiar shape excellent in optical visibility and indicating the azimuth of the crystal axis and to provide a method of forming the dot mark.

Semiconductor wafer including a dot mark of a peculiar shape and method of forming the dot mark

Laser marking device

Laser marking system and laser marking method

Laser marking method using laser heated liquid crystal mask

Liquid crystal display for laser marker

Method and device for color laser marking

Transmission type liquid crystal mask marker

There is disclosed a process for producing a polyhydric alcohol which comprises reacting an aliphatic aldehyde with formaldehyde in the presence of a base compound consisting essentially of a hydrogencarbonate and a carbonate which have been formed by the oxidation or hydrolysis of a formic acid salt, in particular, the process according to the above process wherein a formic acid salt which has been by-produced by the reaction of an aliphatic aldehyde with formaldehyde is oxidized or hydrolyzed in the presence of a noble metal catalyst or a nickel catalyst in a reductive state to form a base compound consisting essentially of a hydrogencarbonate and a carbonate and this base compound is circulated through the reaction of the aldehyde and formaldehyde and is reused as the base compound. The above process enables easy and highly efficient production of high quality polyhydric alcohols substantially without by-producing a formic acid salt with a low value-added.

Process for producing polyhydric alcohol

Metal particle detecting sensor, metal particle detecting method and

Laser marking apparatus

A drive circuit, for use with a transmissive scattered liquid crystal display device, prevents a residual image caused by a high speed display switching, while having a reduced size and fewer parts, thereby improving reliability. The drive circuit comprises a shift register (3a), a first gate for functioning as an AND circuit (2a), a second gate for functioning as an exclusive OR circuit (2b), and a switching device (7) with a higher withstand voltage than a logic signal. These constructional elements are formed within an IC. A logic signal for driving the liquid crystal display device is input to the second gate (2b). The output of the buffer (8) is connected to a totem pole drive circuit (10) for driving a common electrode (C) with a high voltage (HV) which is synchronized with the logic signal.

Drive circuit for use with transmissive scattered liquid crystal display

Electrode structure of metallic particle detecting sensor

Growing community of inventors

Chigasaki, Japan

Akira Mori