Seiko Epson Corporation

Akira Mizuguchi

Takashi Yamazaki

Junichi Takeuchi

Akihiko Ebina

Noriyuki Nakamura

Yorito Sakano

A vibrator device includes a semiconductor substrate, a vibrator element, a circuit element, a wiring, a processing circuit, and a through electrode. The semiconductor substrate has a first surface and an opposite-side second surface of the semiconductor substrate from the first surface. The vibrator element is provided at the first surface. The circuit element is provided at the first surface and includes an oscillation circuit. The wiring is provided at the first surface and electrically couples the vibrator element and the oscillation circuit. The processing circuit is provided at the second surface and processes an output signal of the oscillation circuit. The through electrode penetrates the semiconductor substrate and electrically couples the oscillation circuit and the processing circuit.

Vibrator device

A vibration device includes a base substrate made of silicon and having a first surface and a second surface facing away from the first surface, a lid bonded to the base substrate, a vibrator disposed at the first surface of the base substrate and accommodated in a space between the base substrate and the lid, and a thermistor element disposed at the base substrate.

Vibration device, electronic apparatus, and vehicle

A solid-state imaging device includes: a photoelectric conversion element; a pixel region including a modulation part formed adjacent to the photoelectric conversion element; and a peripheral region in which a peripheral circuit including a driving circuit driving the photoelectric conversion element and the modulation part is disposed, wherein the peripheral region includes a transistor that a sidewall is formed on a side of a gate electrode; and the pixel region includes a transistor that no sidewall is formed on a side of a gate electrode.

Solid-state imaging device

A solid-state image sensing device is provided. In the device, a first floating p-type well and a second floating p-type well are disposed so as to overlap each other and are respectively provided in a light-receiving area and the area of a field effect transistor for light signal detection. A circular gate electrode is disposed so as to cover the overlapping section of the first floating p-type well with the second floating p-type well and is formed on an n-type channel doped layer.

Growing community of inventors

Turuoka, Japan

Akira Mizuguchi