Hitachi, Ltd.

Renesas Electronics Corporation

Hitachi Automotive Systems, Ltd.

Sony Corporation

Renesas Technology Corp.

Akira Mishima

Toshiyuki Innami

Keiichi Mashino

Shinji Shirakawa

Takuro Kanazawa

Kentaro Ochi

Shinichi Fujino

Tetsuya Kawashima

Tetsuo Iijima

Hideshi Fukumoto

Norio Kido

Hiromichi Anan

Katsuo Ishizaka

Nobuyasu Kanekawa

Takuya Mayuzumi

Mitsuhiko Watanabe

Ayumu Hatanaka

Katsunori Azuma

Takashi Kaneko

Tadahiko Chida

Yoshitaka Ochiai

Masaomi Konishide

Fumiaki Nasu

Osamu Suzuki

Eisaburo Itakura

Kenji Takahashi

Hideaki Mori

Manabu Hashimoto

Satoru Inarida

Hideki Ayano

Mitsugu Aoyama

Kohei Onda

Masanori Agekura

Kenji Takagi

Ken Kaneko

Disclosed is an electromagnetic valve driving circuit capable of reducing a load of a booster circuit. A boost driving FETis connected to a route formed between the booster circuitand a first terminal of an injector. A battery-side driving FETand a battery protection diode Db are connected to a route formed between a positive-polarity side of a power supply and the first terminal of the injector. A freewheeling diode Df is connected at a first terminal thereof to a portion between the first terminal of the injectorand the battery protection diode Db, and at a second terminal thereof to a grounding side of the power supply. An injector downstream-side driving FETis connected to a route formed between the second terminal of the injectorand the grounding side of the power supply. In addition to operating the FETs, andaccording to a level of a current which flows through the injector, a control circuitactivates the battery-side driving FETduring a period in which the boost driving FETrepeatedly turns on and off a plurality of times.

Electromagnetic valve driving circuit

The present invention realizes an injector drive circuit capable of providing high output power of a boost convertor while suppressing increases in size and cost thereof. An injector energizing circuitincludes an FETwhich applies a high voltagegenerated by a boost convertorto an injection valve. The boost convertorincludes an input side capacitor, a boosting FET, a boost coil, a boost diode, and FETsandprovided in association with a negative pole of an output side capacitor. During a period in which the high voltageis applied to the injection valve, a gate signalof the FETis turned ON and a gate signalof the FETis turned OFF. Consequently, the boosting FETperforms a switching operation to turn OFF the gate signalof the FETand turn ON the gate signalof the FETduring a period for charging into the output side capacitor. Thus, energy required for boosting can be reduced and an improvement in output is enabled.

Injector drive circuit

A remote editing system has a main editing apparatus configured to transmit, to a remote editing apparatus via a network, hierarchically encoded data that forms an image, the hierarchically encoded data belonging to a predetermined hierarchical level. The remote editing apparatus is configured to accept an editing operation using the hierarchically encoded data transmitted by the main editing apparatus to edit content of the hierarchically encoded data. The remote editing apparatus is further configured to request the main editing apparatus to transmit another hierarchically encoded data, and to generate edited image data using the another hierarchically encoded data transmitted by the main editing apparatus in compliance with the request.

Remote edition system, main edition device, remote edition device, edition method, edition program, and storage medium

A semiconductor device formed by using semiconductor packages is provided. The semiconductor device includes two semiconductor packages adjacently arranged in opposite directions on an inductive conductor. Terminals of the two semiconductor packages are joined by a third lead. The third lead is arranged substantially in parallel to the inductive conductor. Leads at the joint portions have, for example, a bent structure, and the third lead is arranged to be close to the inductive conductor.

Semiconductor device for power conversion

In the semiconductor device, a control power MOSFET chipis disposed on the input-side plate-like leadand the drain terminal DTis formed on the rear surface of the chipand the source terminal STand gate terminal GTare formed on the principal surface of the chipand the source terminal STis connected to the plate-like lead for sourceFurthermore, a synchronous power MOSFET chipis disposed on the output-side plate-like leadand the drain terminal DTis formed on the rear surface of the chipand the output-side plate-like leadis connected to the drain terminal DTFurthermore, source terminal STand gate terminal GTare formed on the principal surface of the synchronous power MOSFET chipand the source terminal STis connected to the plate-like lead for sourceThe plate-like leads for sourceandare exposed, and therefore, it is possible to increase the heat dissipation capability of the MCM

Semiconductor device

A brushless motor system which can suppress adverse influences of electromagnetic noise without increasing the size and enhancing the performance of a filter circuit. In a brushless motor system comprising a brushless motor, an inverter, and a direct current power source, a noise return line for returning a noise current is connected between the brushless motor and the inverter. The noise current is generated in the inverter and reaches the brushless motor. With the provision of the noise return line, a common mode current leaking from the brushless motor to a ground can be reduced.

Brushless motor system

A semiconductor device formed by using semiconductor packages is provided. The semiconductor device includes two semiconductor packages adjacently arranged in opposite directions on an inductive conductor. Terminals of the two semiconductor packages are joined by a third lead. the third lead is arranged substantially in parallel to the inductive conductor. Leads at the joint portions have, for example, a bent structure, and the third lead is arranged to be close to the inductive conductor.

A control device for an electrically operated power steering system includes: a power substrate comprising a plurality of switching elements, that converts DC electrical current to AC electrical current by switching operation of the plurality of switching elements; an output terminal for transmitting the AC electrical current to an electric motor that generates steering torque; a conductor for electrically connecting the power substrate to the output terminal; a metallic chassis that holds the power substrate and the conductor, and supports the output terminal; and a metallic cover that faces the output terminal, and that is connected to the metallic chassis.

Control device for electrically operated power steering system

A power converter of the present invention is connected between a direct current power source and controls power to a load by switching equipment. The converter is equipped with a first conductor for connecting a negative pole of the power converter and the switching equipment, and a second conductor for connecting a housing of the power converter and the negative pole of the power converter to the first conductor through a resistor.

Power converter

In the semiconductor device, a control power MOSFET chipis disposed on the input-side plate-like lead, and the drain terminal DTis formed on the rear surface of the chip, and the source terminal STand gate terminal GTare formed on the principal surface of the chip, and the source terminal STis connected to the plate-like lead for source. Furthermore, a synchronous power MOSFET chipis disposed on the output-side plate-like lead, and the drain terminal DTis formed on the rear surface of the chipand the output-side plate-like leadis connected to the drain terminal DT. Furthermore, source terminal STand gate terminal GTare formed on the principal surface of the synchronous power MOSFET chip, and the source terminal STis connected to the plate-like lead for source. The plate-like leads for sourceandare exposed, and therefore, it is possible to increase the heat dissipation capability of the MCM

The present invention provides a semiconductor device which reduces an inductance of wiring for bridge-connecting semiconductor switches and realizes a reduction in size. Within the semiconductor device formed are two controllable bridge-connected semiconductor switchesand, an output terminal, positive/negative polarity DC terminalsand, and an insulating substratein which conductor layersandhaving a conductor section and in an inner layer for bridge-connecting the semiconductor switches to the DC terminals on a surface thereof and insulating layersandare alternately laminated. The surface and inner-layer conductor layersandwhich interpose the insulating layertherebetween are electrically connected by a conductorpassing through the insulating layerinterposed between the conductor layersand. A current path (dotted line) is so provided as to allow current flowing through a bridge circuit for mounting the two semiconductor switches on the insulating substrate to flow in opposite directions between the conductor layersandwhich interpose the insulating layertherebetween.

Semiconductor device having bridge-connected wiring structure

Growing community of inventors

Mito, Japan

Akira Mishima