Sumitomo Electric Industries, Limited

Japan Atomic Energy Research Institute

Akira Mikumo

Koichi Kimura

Shigenobu Sakita

Kenichi Takahashi

Masuhiro Natsuhara

Naoki Ayai

Masanobu Koganeya

Daisuke Shimao

Munetsugu Ueyama

Tetsuyuki Kaneko

Katsuhiro Itakura

Kenji Shinma

Hirohiko Nakata

Hiroshi Tsuji

Tomoyuki Awazu

Toshinari Ando

Yuichi Yamada

Shin-ichi Kobayashi

Shin-ichi Kobayasi

Makoto Sugimoto

Norikiyo Koizumi

A heater includes a base having a first surface and a second surface, and a heat generator disposed on a third surface of the base, the third surface being parallel to the first surface. The base includes a hole portion that opens in at least the second surface. The third surface includes a plurality of blank areas on each of which the heat generator is not present and each of which is circular. The blank areas include a first blank area including a region that the hole portion overlaps and a second blank area that does not include a region that the hole portion overlaps.

Heater

A wafer holder includes a mounting table that has a mounting surface for a workpiece at a top, a supporting member that supports the mounting table from a lower side, a first cylindrical member one end of which is joined hermetically to a lower surface of the mounting table, and a second cylindrical member that is provided inside the first cylindrical member and one end of which is joined hermetically to the lower surface of the mounting table.

Semiconductor manufacturing apparatus and wafer holding table for semiconductor manufacturing apparatus

A wafer holding unit includes a disk-shaped ceramic substrate having a wafer mounting surface on an upper surface of the substrate, an RF electrode, for example, embedded within the substrate, a metal terminal inserted from a lower surface of the substrate, and a connecting terminal which electrically connects the RF electrode and the metal terminal with each other. The connecting terminal is constituted by a ceramic member and a metal layer. The ceramic member is made of the same material as the substrate and preferably has a truncated conical shape. The metal layer covers a surface of the ceramic member. An upper end of the metal layer is connected to the RF electrode, while a lower end of the metal layer is connected to the metal terminal with a metal member interposed therebetween.

Wafer holding body

A wafer holder comprising: a ceramic base having a wafer-mounting surface as an upper surface; and a conductive member embedded in the ceramic base, the conductive member including a circuit portion provided parallel to the wafer-mounting surface, a pull-out portion provided parallel to the wafer-mounting surface and spaced from the circuit portion in a direction opposite to a direction toward the wafer-mounting surface, and a connecting portion configured to electrically connect the circuit portion and the pull-out portion to each other.

Wafer holder

A showerhead provided in a chamber of a semiconductor manufacturing apparatus and facing a wafer holder includes: a disk-shaped member having a plurality of through holes penetrating the disk-shaped member in a direction of a thickness thereof; a high-frequency conductor embedded in the disk-shaped member; a hole provided in the disk-shaped member, extending in the direction of the thickness of the disk-shaped member and having a bottom exposing a portion of the conductor; an electrode terminal portion disposed in the hole and having a base portion electrically connected to the conductor and a columnar portion provided on the base portion; a cylindrical member having a first end portion fitted outside the columnar portion and facing the conductor and a second end portion facing away from the first end portion, and a sealing member surrounding the first end portion.

Showerhead and method for manufacturing the same

A showerhead provided in a chamber of a semiconductor manufacturing apparatus and facing a wafer holder includes: a plate-shaped ceramic substrate; a plurality of through holes penetrating the ceramic substrate in the direction of the thickness of the ceramic substrate; and a plurality of radio frequency conductors embedded in a plurality of zones, respectively, of the ceramic substrate, as seen on the side of a surface of the ceramic substrate facing the wafer holder.

Showerhead

Wafer holding unit

A ceramic heater attaining more uniform temperature distribution from the start to the end of cooling is provided. Further, in a cooling module used for cooling the heater, liquid leakage during use is prevented, degradation in cooling capability is prevented and the performance is maintained for a long period of use, and the manufacturing cost of the module is decreased. The ceramic heater includes a ceramic heater body and a cooling module cooling the heater body, and the cooling module has a structure formed by arranging a pipe in a trench formed in a plate-shaped structure.

Heater unit and semiconductor manufacturing apparatus including the same

In order to provide a superconducting wire that has a high critical current value, has no defects such as bulges, and has high mechanical strength, an oxide superconducting material ( ) is covered, and ceramic particles or fibers ( ) are buried in the surface of a covering ( ) made of metal

Superconducting wire

Powder including at least a superconducting phase is degassed (step S ). After the powder is filled in a silver pipe (step S ), the silver pipe is degassed at a high temperature (step S ). After a plurality of single-core wires are inserted into another silver pipe to attain a multi-core structure, the silver pipe is degassed at a high temperature (step S ). The silver pipe is sealed under a reduced pressure (step S ). Therefore, even when a multi-core superconducting wire is manufactured, a manufacturing method of a superconducting wire capable of preventing swelling of the wire caused by a residual gaseous component can be obtained.

Manufacturing method of superconducting wire

An Nb.sub.3 Al multi-filamentary superconducting wire capable of realizing both stabilization of a superconducting state and increase in capacity is provided. The Nb.sub.3 Al multi-filamentary superconducting wire includes a core formed of copper or copper alloy and located at the center of the wire; a multi-filamentary superconductor layer located around the core and having filaments containing Nb and Al as constituent elements embedded in a matrix formed of copper or copper alloy; and a high resistance layer located around the multi-filamentary superconductor layer, and is characterized in that a sectional area of the core is at least 15% of the total sectional area of the core and the matrix and that the core and the matrix are formed of copper or copper alloy of at least 99.9% purity.

Nb.sub.3 Al multi-filamentary superconducting wire

Disclosed herein are methods of measuring, adjusting and uniformalizing a sectional area ratio of a metal-covered electric wire, a method of cleaning an electric wire, a method of manufacturing a metal-covered electric wire, an apparatus for measuring a sectional area ratio of a metal-covered electric wire, and an apparatus for electropolishing a metal-covered electric wire. Electric resistance values of first and second materials are previously stored respectively so that a sectional area ratio of a metal-covered electric wire is calculated on the basis of the as-stored values and an actually measured electric resistance value of the metal-covered electric wire. Measurement and uniformalization of a sectional area ratio of a metal-covered electric wire and cleaning of an electric wire are carried out by dissolving surface layer parts of the electric wires by electropolishing.

Apparatus for adjusting sectional area ratio of metal-covered electric

Methods of measuring, adjusting and uniformalizing a sectional area ratio of a metal-covered electric wire, a method of cleaning an electric wire, a method of manufacturing a metal-covered electric wire, an apparatus for measuring a sectional area ratio of a metal-covered electric wire, and an apparatus for electropolishing a metal-covered electric wire. Electric resistance values of first and second materials are previously stored respectively so that a sectional area ratio of a metal-covered electric wire is calculated on the basis of the as-stored values and an actually measured electric resistance value of the metal-covered electric wire. Measurement and uniformalization of a sectional area ratio of a metal-covered electric wire and cleaning of an electric wire are carried out by dissolving surface layer parts of the electric wires by electropolishing.

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Itami, Japan

Akira Mikumo