Semiconductor Energy Laboratory Co., Ltd.

Other

Toyota Jidosha Kabushiki Kaisha

Akira Mase

Shunpei Yamazaki

Masaaki Hiroki

Yasuhiko Takemura

Toshimitsu Konuma

Toshiji Hamatani

Hideki Uochi

Mitsunori Sakama

Hiroyuki Sakayori

Toshiharu Yamaguchi

Hongyong Zhang

Takashi Inujima

Takashi Inushima

Minoru Miyazaki

Masahiko Sato

Toshio Watanabe

Akio Osabe

Kaoru Koyanagi

Hideki Nemoto

Shunepi Yamazaki

Kaoru Tabata

Toru Takayama

Takeshi Nishi

Ippei Kobayashi

Osamu Aoyagi

Masakazu Odaka

Hiroshi Sugiyama

Toshimitsu Hagiwara

Hitoshi Kondo

Michio Shimizu

Tomoyoshi Kushida

Misao Yagi

Chizuru Isigaki

Shinji Imato

Hiroko Konuma

Mika Tadokoro

Takeshi Oka

Michio Shimuzu

Chizuru Ishigaki

A grey tone display and a driving method are described. The display comprises a light influencing layer, an electrode pad located adjacent to the layer at one side of the layer in order to define a pixel in the layer, an n-channel field effect transistors connected to the electrode pad at its source terminal, a p-channel field effect transistors connected to the electrode pad at its source terminal, a first control line connected to the drain terminal of the n-channel field effect transistor, a second control line connected to the drain terminal of the p-channel field effect transistor, a third control line connected to the gate terminals of the n-channel field effect transistor and the p-channel field effect transistor, and a control circuit for supplying control signals to the first, second and third control lines. By this configuration, the voltage of the electrode pad can be arbitrarily controlled by adjusting the input level at the gate terminals.

Electro-optical device and driving method for the same

An electro-optical device comprising a display drive system with the display timing related to the unit time t for writing-in a picture element and to the time F for writing-in one picture is disclosed. In the device, a gradated display corresponding to the ratio of the division can be obtained by time-sharing the signal during a write-in of time t without changing the time F.

Active matrix type display device

The method of fine gradation display by an electro-optical device with little influence by difference in elemental devices, is disclosed, which is an object of the present invention. In case of an active matrix electro-optical device, a visual gradation display can be carried out by digitizing an analog image signal externally supplied by means of binary notation, by temporarily storing the digital signal thus obtained, by outputting the digital signal to a circuit of next step in a proper order, and by controlling the output timing of the signal so as to output the signal to the active matrix electro-optical device, and whereby digitally controlling the time for applying voltage to a picture element.

Electro-optical device and method of driving the same

A novel structure of an active electro-optical device is disclosed. The device is provided with complementary thin film insulated gate field affect transistors (TFTs) therein which comprise a P-TFT and an N-TFT. P-TFT and N-TFT are connected to a common signal line by the gate electrodes thereof, while the source (or drain) electrodes thereof are connected to a common signal line as well as to one of the picture element electrodes. In case of driving the active electro-optical device, a gradation display can be carried out in a driving method having a display timing determined in relation to a time F for writing one screen and a time (t) for writing in one picture element, by applying a reference signal in a cycle of the time (t), to the signal line used for a certain picture element driving selection, and by applying the select signal to the other signal line at a certain timing within the time (t), and whereby setting the value of the voltage to be applied to a liquid crystal.

Electro-optical device and method for driving the same

Electro-optical device

An electro-optical display device comprising a first substrate having an insulating surface, at least one thin film transistor formed over the first substrate, the thin film transistor comprising a channel region, source and drain regions with the channel region extending in between, a gate insulating film adjacent to the channel region, and a gate electrode adjacent to the gate insulating film, a pixel electrode formed over a leveling film or over an interlayer insulating film and electrically connected to one of the source and drain regions of the thin film transistor, and color filters or black stripes comprising a resin formed over a second substrate. A leveling film may be formed over the at least one thin film transistor, the color filters or the black stripes. The device may comprise a second leveling film or a common electrode.

Electro-optical display device having thin film transistors including a gate insulating film containing fluorine

A thin-film semiconductor device or integrated circuit comprising an insulating substrate, TFTs (thin-film transistors) formed on the substrate, and multilayer conductive interconnections. The circuit has a first metallization layer becoming gate electrodes and gate interconnections. The surface of the first metallization layer is oxidized by anodic oxidation to form an insulating coating on the surface of the first metallization layer. A second metallization layer becoming source and drain electrodes or conductive interconnections is then formed on the insulating coating directly or via an interlayer insulator. An improvement in the production yield and improved reliability are accomplished.

Semiconductor device and method for forming the same

An insulated gate field effect semiconductor device comprising a substrate having provided thereon a thin-film structured insulated gate field effect semiconductor device, said device being characterized by that it comprises a metal gate electrode and at least the side thereof is coated with an oxide of the metal. The insulated gate field effect semiconductor device according to the present invention is also characterized by that the contact holes for the extracting contacts of the source and drain regions are provided at about the same position of the end face of the anodically oxidized film established at the side of the gate. Furthermore, the present invention provides a method for forming insulated gate field effect semiconductor devices using less masks.

A novel structure of an active display device is disclosed. The device is characterized as having at least one display device comprising a substrate having an insulated surface with at least one thin film transistor (TFT) formed over the substrate and a gate insulating film and gate electrode adjacent to the channel region, with the gate insulating layer interposed between the gate electrode and the channel region. In one embodiment, an interlayer insulating film covers the TFT and an aluminum lead electrode is formed over the interlayer insulating layer that is electrically connected to one of the source or drain regions of the TFT through a hole of the interlayer insulating film. In another embodiment of the invention the first and second holes of the interlayer insulating layer do not overlap. In a preferred embodiment, an organic resin film, with a pixel electrode form thereover, is formed over the thin film transistor, the interlayer insulating film and the lead electrode is provide a leveled upper surface. The pixel electrode is electrically connected to the TFT via the lead electrode. The present invention is applicable with any device with a display, such as a television or a personal computer.

A display and a driving method for the same capable of constructing clear visual images is described. In the display, a plurality of conductive pads are opposed to a back electrode with a light influencing medium such as a liquid crystal layer. Control signals are supplied to the conductive pads through complimentary transistors comprise a p-channel field effect transistor and an n-channel field effect transistor connected between Vand Vlines of a control circuit, which also supplies a bias voltage to the back electrode and gate control signals to the gate terminals of the p-channel field effect transistor and the n-channel field effect transistor. During operation, the bias voltage is inverted in order to invert the polarity of control signal applied across the light influencing medium.

Method of making an active-type LCD with digitally graded display

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Aichi, Japan

Akira Mase