Toyoda Gosei Co., Ltd.

Other

Nagoya University

Kabushiki Kaisha Toyota Chuo Kenkyusho

Research Development Corporation of Japan

Japan Science and Technology Agency

Akira Mabuchi

Hisaki Kato

Norikatsu Koide

Isamu Akasaki

Shiro Yamazaki

Katsuhide Manabe

Michinari Sassa

Masafumi Hashimoto

Osamu Yamanaka

Kanae Matsumura

Masanao Ishikake

Kenji Yano

Masato Kawamura

Takemasa Yasukawa

Yukio Kawakita

Michihiko Nakamura

Kenichi Watanabe

Hisashi Mizuno

Hideyuki Imai

Yoshio Yamazaki

Masato Ueno

Satoru Ono

Sadao Uchida

Hiroshi Yokoi

Kazuhiro Sakai

Satomi Watanabe

Yoshihiro Miura

Kazutoshi Miyake

Motoshi Matsuura

Naoki Yoshimura

Shinji Jinushi

Kazuya Ito

Kyouichi Fujinami

Naoyuki Kumagai

Satoshi Honda

Tsutomu Yokota

Etsuro Mori

Takayoshi Iwata

Yasuji Ozaki

Masafumi Hasimoto

Koji Wakabayashi

Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlGaN) in which the n-layer of n-type gallium nitride compound semiconductor (AlGaN) is of double-layer structure including an n-layer of low carrier concentration and an n-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlGaN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an i-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an i-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlGaN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

Method for manufacturing a gallium nitride group compound semiconductor

Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Al Ga N) in which the n-layer of n-type gallium nitride compound semiconductor (Al Ga N) is of double-layer structure including an n-layer of low carrier concentration and an n -layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (Al Ga N); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an i -layer of low impurity concentration containing p-type impurities in comparatively low concentration and an i -layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (Al Ga N) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

The present invention provides a non-drying sealer composition which does not substantially swell or shrink non-polar vulcanized rubber products. The non-drying sealer composition is suitable for sealing a gap between a sheet-metal flange and the inside of a trim part by charging the composition into the trim part of the weatherstrip for an automobile. The non-drying sealer composition comprises liquid rubber as a sealer base, a tackifier and a thixotropic agent as auxiliary materials, and a non-volatile softener (including a plasticizer) as a dispersing medium. As the non-volatile softer, a shrinking component is used alone or in combination with a swelling component. Thus the swelling action of the sealer composition against the non-polar vulcanized rubber product reaches within about &plusmn;5% in terms of the degree of swelling.

Non-drying sealer composition

A sealing member for a short-wavelength light emitting element comprises a main agent and a curing agent. The main agent comprises a first component of an alicyclic epoxy produced by hydrogenating an aromatic epoxy, preferably a bisphenol A epoxy, and a second component of an alicyclic epoxy having a lower molecular weight than the first component. The mixing amount of the second component is not less than 10% by weight and less than 30% by weight based on the main agent.

Light emitting apparatus

After a light-emitting element exhibiting an emission peak wavelength in a wavelength range of not longer than 500 nm is mounted into a cup-like portion of a base member, the cup-like portion is filled with epoxy group-containing silicone rubber. An aromatic polyamide-based resin is used as a reflector material.

Light-emitting device

An alicyclic epoxy resin is used as a material for forming a member for sealing a Group III nitride compound semiconductor light-emitting device.

Light-emitting system with alicyclic epoxy sealing member

Method for producing a light-emitting semiconductor device

Light-emitting semiconductor device using gallium nitride group compound

Gallium nitride group compound semiconductor

Light emitting device

A semiconductor device having an n-type layer of gallium nitride that is doped with silicon and has a resistively ranging from 3&times;10,&OHgr;cm to 8&times;,&OHgr;cm or a carrier concentration ranging from 6&times;10,/cm,to 3&times;10,/cm,.

Light emitting semiconductor device using gallium nitride group compound

The sealant composition disclosed herein is favorable for sealing car parts. The sealant composition is charged inside the trim of a weather strip of a car so as to seal the gap between the trim and the plate flange as inserted inside the trim. The sealant composition comprises a liquid rubber as the base component, a tackifier and a thixotropy promoter as secondary components, and a nonvolatile plasticizer and/or a process oil as the dispersion medium.

Sealant composition

The present invention is directed to a vibration insulating assembly including a rubber vibration insulator and metallic members bonded thereto. In particular, the present invention relates to a method for manufacturing the same, by which the quality of the resulting assembly is improved by providing a high bonding strength between the vibration insulator and metallic members. Retainers are provided about the peripheries of the bonding surfaces of the rubber vibration insulator in order to restrict displacement and deformation of the rubber vibration insulator across the bonding surfaces or at the bonding interface with the metallic members and to facilitate its positioning. The presence of the retainers allows for the application of a predetermined pressure on the bonding surfaces to enhance the bonding strength while preventing an undesirable strain from forming in the bonding surface of the rubber vibration insulator. At least one and preferably a plurality of grains or recessed portions are preferably formed in the bonding surfaces of the rubber vibration insulator to be bonded to the metallic members. An adhesive, which is preferably solvent-free, is applied to these bonding surfaces to effect bonding.

Vibration insulating assembly and method for making the same

A light-emitting semiconductor device using a gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) having an i.sub.L -layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) containing a low concentration of p-type impurities. An i.sub.H -layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) containing a high concentration of p-type impurities is adjacent to the i.sub.L -layer. An n-layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) of low carrier concentration is adjacent to the i.sub.L -layer. An n.sup.+ -layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) of high carrier concentration doped with n-type impurities is adjacent to the n-layer.

Growing community of inventors

Nagoya, Japan

Akira Mabuchi