Denso Corporation

Nippondenso Co., Ltd.

Toyota Jidosha Kabushiki Kaisha

Denso Corpora Tion

Nippondenso Corporation

Akira Kuroyanagi

Masami Yamaoka

Yoshifumi Okabe

Tetsuo Fujii

Minekazu Sakai

Mikimasa Suzuki

Norihito Tokura

Yutaka Tomatsu

Yasuaki Tsuzuki

Toshiaki Nishizawa

Hidefumi Takaya

Shoji Miura

Takaaki Aoki

Masato Ichikawa

Yasushi Okura

Hidehisa Nasu

Ryouichi Kubokoya

Akira Sahashi

Tsuyoshi Yamamoto

Tadashi Hazama

Takeshi Fukazawa

Kiyonori Moroto

Takeshi Yamauchi

Yasuo Souki

Kimimori Hamada

Hajime Soga

Hirohito Shioya

Yasushi Tanaka

Yuji Ichikawa

Muneo Tamura

Katuhide Niwa

Yukio Tsuzuki

Takeshi Miyajima

Shinji Yoshihara

Susumu Kuroyanagi

Kenji Kondo

Shigemitsu Fukatsu

Takashi Suzuki

Noriyuki Iwamori

Takafumi Arakawa

Tooru Yamaoka

Kyosuke Miyagi

Fuminari Suzuki

Yoshitaka Nakano

Tomohiro Funahashi

Atushi Komura

A fuel pump includes a pump portion for pumping fuel. The fuel pump further includes a magnet having magnetic poles circumferentially alternate with each other. The fuel pump further includes an armature on a radially inside of the magnet. The armature includes a rotor core provided with a coil formed of a wire. The armature is rotatable for driving the pump portion. A commutator, which is in a substantially disc shape, is provided to an axial end of the armature for rectifying electricity supplying to the coil. The rotor core has an axial end having an outer circumferential periphery defining a commutator-side collar portion extending toward the commutator. The coil is formed by winding the wire between an outer circumferential periphery of the commutator and the commutator-side collar portion.

Method for manufacturing motor device for a fuel pump

The invention has an object to provide an insulation gate type semiconductor device and a method for producing the same in which high breakdown voltage and compactness are achieved. The semiconductor device has a gate trench and a P floating region formed in the cell area and has a terminal trench and a P floating region formed in the terminal area. In addition, a terminal trench of three terminal trenches has a structure similar to that of the gate trench, and the other terminal trenches have a structure in which an insulation substance such as oxide silicon is filled. Also, the P floating region 51 is an area formed by implanting impurities from the bottom surface of the gate trench, and the P floating region is an area formed by implanting impurities from the bottom surface of the terminal trench.

Insulated gate semiconductor device and method for producing the same

Fuel pump and motor device for the same

The present invention provides an insulated gate semiconductor device which has floating regions around the bottoms of trenches and which is capable of reliably achieving a high withstand voltage. An insulated gate semiconductor deviceincludes a cell area through which current flows and an terminal area which surrounds the cell area. The semiconductor devicealso has a plurality of gate trenchesin the cell area and a plurality of terminal trenchesin the terminal area. The gate trenchesare formed in a striped shape, and the terminal trenchesare formed concentrically. In the semiconductor device, the gate trenchesand the terminal trenchesare positioned in a manner that spacings between the ends of the gate trenchesand the side of the terminal trenchare uniform. That is, the length of the gate trenchesis adjusted according to the curvature of the corners of the terminal trench

Insulated gate semiconductor device

The invention is intended to present an insulated gate type semiconductor device that can be manufactured easily and its manufacturing method while realizing both higher withstand voltage design and lower on-resistance design. The semiconductor device comprises N+ source region, N+ drain regionP&#x2212; body regionand N&#x2212; drift regionBy excavating part of the upper side of the semiconductor device, a gate trenchis formed. The gate trenchincorporates the gate electrode. A P floating regionis provided beneath the gate trenchA further trenchdiffering in depth from the gate trenchmay be formed, a P floating regionbeing provided beneath the trench

Insulated gate type semiconductor device and manufacturing method thereof

A hot-air supply structure () comprises a hot air generator () and a housing () formed in the neighborhood of a hot-air inlet () of a molded component M in a die (). A nozzle () is formed at the forward end of the hot-air generator, and an ejection port () is formed on the side wall portion of the forward end needle unit () of the nozzle. The housing includes a support hole () in the nozzle, a relief hole (), a flow path communication passage () and a bypass (). The ejection port is movable between a first position to discharge the cool or warm air into the atmosphere through the bypass from the relief hole and a second position to introduce hot air into the flow path () of the molded component through the inlet () and the passage ().

Heated medium supplying method and structure for secondary molding of resin molded component

The change-over device changes over, to one of three passages, between the runner groove connected to the injection nozzle and the communicating groove communicated with the mold side passage. At the first position, the second passageis communicated with the communicating groove and the temperature of a flow of hot air is measured by the thermocouple and the flow is discharged into the atmosphere. At the second position, the runner groove and the communicating groove are communicated with each other when the runner groove and the communicating groove are open to the second passageand resin material is injected into the mold. At the third position, the material in the injection passage and the material in the runner groove are deposited to each other when the injection passage is shut off from the communicating passage and the third passageis communicated with the runner groove.

Method of manufacturing resin molding and change-over device for changing over between heating medium and resin material in process of secondary forming

A trench-gate type transistor has a gate insulating film formed on an inner wall of a trench. The gate insulating film includes a first portion located on a wall of the trench and a second portion located on upper and bottom portions of the trench. The first portion includes a first oxide film, a nitride film, and a second oxide film. The second portion includes only an oxide film and is thicker than the first portion. Accordingly, electric field concentration on upper and lower corner portions of the trench can be reduced to improve the withstand voltage. In addition, and end of the trench may have an insulation layer that is thicker than the first portion.

Trench-gate transistor with ono gate dielectric and fabrication process therefor

The device includes: a runner block arranged at a position close to the injection port for resin material for secondary forming; and a slide core moved relatively with the runner block. In the runner block, a guide passage is formed which is communicated with a passage formed when pipe-shaped passages of the primary moldings are butted against each other. A heating medium passage or a resin material passage formed in the slide core are moved so that either the heating medium passage or the resin material passage can be selectively communicated with the guide passage formed in the runner block.

Change-over device for changing over between a heating medium and a resin material at a time of a secondary forming

A semiconductor device including an N-type semiconductor substrate which includes arsenic as an impurity, a first electrode formed on a main surface of the N-type semiconductor substrate, a ground surface formed on another surface of the N-type semiconductor substrate, a second electrode formed on the ground surface and ohmically-contacted with the N-type semiconductor substrate, a semiconductor element formed in the N-type semiconductor substrate and flowing current between the first electrode and the second electrode during On-state thereof. The device has a reduced ON-resistance thereof.

Semiconductor device and method of manufacturing same

A drift layer is formed on a substrate. A base region is formed on the drift layer. A plurality of source regions are formed in a surficial layer of the base region. A plurality of gate electrodes face to the base region and the source region via a gate insulating film. A source electrode is brought into contact with the base region and the source region. A nitrogen cluster containing layer is embedded in the drift layer so as to extend laterally under the base region so that at least part of the drift region is left under the nitrogen cluster containing layer.

Metal oxide semiconductor transistor having a nitrogen cluster containing layer embedded in the substrate

A method of manufacturing a vertical semiconductor device includes preparing a semiconductor wafer which has a heavily doped semiconductor substrate and a lightly doped semiconductor layer disposed over the semiconductor substrate, forming a semiconductor element at a surface portion of the semiconductor layer, forming a first metal layer for a first electrode of the semiconductor element over the surface portion of the semiconductor layer, grinding a back of the semiconductor substrate to thin the semiconductor substrate and roughen a back surface of the semiconductor substrate, performing a wet etching upon the back surface; and forming on the back surface a second metal layer for a second electrode of the semiconductor element.

Method of manufacturing a vertical semiconductor device

In a semiconductor device such as MOSFET, a single crystal semiconductor substrate is provided. An epitaxitial layer is formed on the single crystal semiconductor substrate. A p-well regions are formed on the epitaxitial layer, respectively, and nsource regions are formed on the p-well regions, respectively. A gate electrode is formed through a gate insulation film on a part of each p-well region and that of each nsource region. The gate electrode is covered with an insulation film. On the insulation film, a source electrode is formed so that the n-channel MOSFET includes body diodes BD imbedded therein. A drain electrode is formed on the single crystal semiconductor substrate. A cluster-containing layer is implanted in the single crystal semiconductor substrate as a gettering layer so that the cluster-containing layer contains a cluster of nitrogen.

Semiconductor device

A semiconductor device including an N-type semiconductor substrate which includes arsenic as an impurity, a first electrode formed on a main surface of the N-type semiconductor substrate, a ground surface formed on another surface of the N-type semiconductor substrate, a second electrode formed on the ground surface and ohmically-contacted with the N-type semiconductor substrate, a semiconductor element formed in the N-type semiconductor substrate and flowing current between the first electrode and the second electrode during ON-state thereof. The device has a reduced ON-resistance thereof.

Power semiconductor device

Semiconductor device and method for manufacturing the same

Growing community of inventors

Okazaki, Japan

Akira Kuroyanagi