Toshiba Memory Corporation

Kabushiki Kaisha Toshiba

Akira Kuramoto

Haruko Akutsu

Takahiro Ikeda

Nobuhito Kuge

Makiko Katano

Tatsuya Fujishima

Masayuki Shishido

Teruyuki Kinno

Hideto Onuma

A sample analyzer includes a voltage source that applies a voltage to a sample. A laser irradiator irradiates the sample with a laser beam. A detector detects a particle emitted from the sample. An operation device specifies the material of the particle detected by the detection device, by mass spectrometry of the particle and analyzes the structure of the sample. The operation device calculates a ratio in structure between model information indicating the structure of the sample, which is prepared in advance, and analysis information indicating the structure of the sample, which is obtained by the mass spectrometry, and applies the ratio to the analysis information so as to correct the analysis information.

Sample analyzer and sample analysis method

According to one embodiment, an atom probe inspection device includes one or more processors configured to change a two-dimensional position of a detected ion, detect two-dimensional position information of the ion and a flying time of the ion, identify a type of an element of the ion, generate first information under a first condition and second information under a second condition, and generate a reconstruction image of the sample from the first information and the second information.

Atom probe inspection device, field ion microscope, and distortion correction method

A semiconductor memory device includes a stacked body including a plurality of word lines; a semiconductor layer extending through the word lines; a memory cell provided at a part where the semiconductor layer crosses one of the word lines, the memory cell including a plurality of cell layers, the cell layers including a first insulating layer; and at least one of a first structural body and a second structural body provided around the stacked body. The first structural body includes a plurality of monitor layers including same materials respectively as materials of the cell layers. The second structural body includes a first electrode, a second electrode and an insulating body positioned between the first electrode and the second electrode. The insulating body includes same material as a material of the first insulating layer, and has almost the same thickness as a thickness of the first insulating layer.

Semiconductor memory device and method for manufacturing same

In accordance with an embodiment, an analytical apparatus includes a member, a voltage source connected to the member and a detecting section. The member has an inserting portion into which a sample holder supporting a sample is insertable and whose shape corresponds to a shape of the sample holder. The detecting section is configured to detect a substance to be emitted from the sample by field evaporation. The shape of the inserting portion in a cross section of a direction perpendicular to an inserting direction of the sample holder is a shape excluding a perfect circle.

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Kuwana, Japan

Akira Kuramoto