Tokyo Electron Limited

Shin-etsu Chemical Co., Ltd.

Akira Kodashima

Suguru Motegi

Takashi Kumagai

Koji Miyata

Jun Hirose

Kazuhiro Kubota

Shigeki Tozawa

Yuki Chiba

Takehiro Kato

Keisuke Yoshimura

Shinichi Miyano

A substrate processing system includes a first chamber, a second chamber, and a cooling passage. The first chamber has therein a space for processing a substrate transferred from a first transfer chamber maintained in a vacuum atmosphere. The second chamber is disposed below the first chamber to be vertically aligned with the first chamber and configured to communicate with the first transfer chamber and a second transfer chamber maintained in an atmospheric atmosphere. The second chamber has substantially the same footprint as a footprint of the first chamber. Further, a cooling passage is disposed between the first chamber and the second chamber and configured to allow a coolant to flow therethrough.

Substrate processing system

A substrate processing system installed on a floor face is provided. The substrate processing system includes a substrate transfer module, a supporting table including a top plate disposed separately from the floor face, a plurality of substrate processing modules disposed on the top plate and coupled to the substrate transfer module along a lateral side of the substrate transfer module, and a plurality of power units disposed below the top plate. Further, the plurality of power units correspond to the plurality of substrate processing modules, respectively, and each of the power units is configured to supply electric power to the corresponding processing module.

In a magnetic field generator for magnetron plasma generation which comprises a dipole-ring magnet with a plurality of columnar anisotropic segment magnets arranged in a ring-like manner, or in an etching apparatus and a method both of which utilize the magnetic field generator, the uniformity of plasma treatment over the entire surface of a wafer (workpiece) is improved by controlling the direction of the magnetic field relative to the working surface of the wafer (workpiece) which is subject to plasma treatment such as etching.

Magnetic field generator for magnetron plasma, and plasma etching apparatus and method comprising the magnetic field generator

A substrate processing apparatus which enables the work efficiency of maintenance to be improved. The substrate processing apparatus comprises a plurality of processing chambersfor carrying out plasma processing on a wafer to be processed. Each processing chamberhas a chamber lidthat can be suspended and supported by a crane unit. The crane unitcomprises an air cylinderand a linear guide. The air cylinderholds the chamber lidmovably in a vertical direction thereabove. The linear guideholds the chamber lidmovably in a horizontal direction.

Substrate processing apparatus and lid supporting apparatus for the substrate processing apparatus

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Miyagi, Japan

Akira Kodashima