Toyo Seikan Kaisha, Ltd.

Other

Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

Kyoto University

Yamatake-Honeywell Co., Ltd.

Akira Kobayashi

Hideo Kurashima

Katsuhiro Imazu

Tomomi Kobayashi

Tsunehisa Namiki

Koji Yamada

Kouji Yamada

Toshihide Ieki

Hajime Inagaki

Yuji Funagi

Takeshi Aihara

Hiroki Sano

Yasunori Onozawa

Tateyuki Sasaki

Tadashi Kojima

Nobuyuki Sato

Kazuhiro Sato

Hiroshi Fujimoto

Hiroshi Sasaki

Tokuhisa Ohiwa

Takuji Yoshida

Haruki Mori

Masanori Aizawa

Yutaka Yamamoto

Toshiaki Matsui

Takeshi Kawai

Norimasa Maida

Hiroshi Inazawa

Sadayuki Jimbo

Noriaki Kaguma

Masaaki Nagahara

Satoshi Fujita

Norihito Saiki

Takuji Nakamura

Hisahide Hattori

Yasuyuki Taniguchi

Hiroko Hosono

Yoichi Akashi

Imazu Katsuhiro

Norihiko Saiki

Toshiya Takabayashi

Harumi Sato

Tadashi Shinmura

Toshio Nagakura

Kazunori Sekiuchi

Atsuo Moriyama

Miwako Tanikawa

Harunobu Yuzawa

Masaaki Nishiwaki

Narimasa Maida

A microwave plasma processing device includes a fixing device for fixing a substrate as a processing target on a central axis in a plasma processing chamber, a exhausting device for depressurizing an inside and outside of the substrate, a metal processing gas supply member which is present in the substrate and forms a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to perform processing. A microwave sealing member is provided at a substrate-holding portion of the fixing device, and a connection position of the microwave introducing device is located at a node of an electric field intensity distribution formed on the processing gas supply member by introducing the microwave.

Microwave plasma processing device

An FFT analysis is performed on the decoded image data of one frame, and a cutoff frequency based on the assumption that the original signal has first-order attenuation characteristics is obtained in both the horizontal and vertical directions. A sampled-data Hfilter (digital filter), previously designed to have different parameters corresponding to different cutoff frequencies is selected. By using this filter, a filtering process is performed on the image data decoded both in the horizontal and vertical directions. Since the variety of the analog frequency characteristics of the original image is taken into account for every frame of the image, the information that seems to be noise in the original image is less likely to be removed, and mosquito noise and block noise associated with a coding/decoding process can be efficiently removed.

Method and apparatus for removing image noise

A method of forming a metal oxide film by the plasma CVD method and which includes reacting chiefly an organometal by a glow discharge in a low output region and, then, reacting the organometal with an oxidizing gas by the glow discharge in a high-output region to form a metal oxide film on the surface of a plastic substrate via an organic layer. This method forms a thin film having excellent adhesiveness, softness and flexibility on the surface of a plastic substrate relying on the plasma CVD method.

Method of forming a metal oxide film and microwave power source device used for the above method

A microwave plasma processing device can form a uniform thin film on a substrate to be processed. The microwave plasma processing device includes a fixing device for fixing a substrate to be processed onto the center axis in a plasma processing chamber, an exhaust device for depressurizing the inside and outside of the substrate, a metal processing gas supply member present in the substrate and forming a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to process it. A microwave sealing member is provided in a specified position of the substrate-holding portion of the fixing device, and the connection position of the microwave introducing device is set to a specified weak-field position out of a field intensity distribution formed in the interior of the plasma processing chamber.

Microwave plasma processing device and plasma processing gas supply member

A method of forming a vapor deposited film of a silicon oxide on the surface of a substrate by holding the substrate to be treated in a plasma-treating chamber, and effecting the treatment with a chemical plasma by feeding an organosilicon compound and an oxidizing gas into the treating chamber, wherein the rate of feeding the oxidizing gas is varied while maintaining constant the rate of feeding the organosilicon compound gas into the plasma-treating chamber during the formation of the vapor deposited film. A chemical vapor deposited film is formed featuring excellent adhesiveness, softness, flexibility, oxygen-barrier property and water-barrier property.

Chemical vapor deposited film based on a plasma CVD method and method of forming the film

A microwave plasma processing method is provided which enables a uniform thin film layer to be formed on a surface to be processed and which enables a short time processing. In the microwave plasma processing method, microwaves are introduced into a plasma processing chamber, and a processing gas is transformed into plasma to form a thin film layer on a base substancedisposed in the plasma processing chamber, and the method comprises: fixing the base substancecoaxially with a central axis of the plasma processing chamber; setting a standing wave mode of the microwaves in the plasma processing chamber to a TE mode or a TEM mode from a mouth portionto a body portionof the base substance; and setting a mode having both the TE mode and a TM mode in a bottom portionof the base substance.

Microwave plasma processing method

A silicon oxide film is formed on the surfaces of a plastic substrate and contains methyl groups and methylene groups in a portion near the interface to the plastic substrate. The silicon oxide film exhibits not only excellent adhesion to the plastic substrate, softness and flexibility but also exhibits excellent gas shut-off property (gas barrier property), makes it possible to achieve excellent gas-shutoff property with a smaller film thickness than that of the conventional films, and can be mass-produced favorably.

Silicon oxide film

Roadside wireless devices are installed at roadside positions corresponding to the traffic lanes entering an intersection. Roadside wireless devices are also installed at roadside positions corresponding to the traffic lanes exiting an intersection. The roadside wireless devices on the entrance side receive an identification number from vehicle-mounted wireless ID devices of vehicles entering the intersection and transmit them to a roadside traffic monitoring device. Thereafter, the roadside wireless devices on the exit side receive an identification number from the vehicle-mounted wireless ID devices of vehicles exiting the intersection and transmit them to the roadside traffic monitoring device. From the identification numbers received, the roadside traffic monitoring device is able to determine the entrance from which a vehicle judged to be the same one had entered and the exit from which it exited, along with the type of vehicle. Short-term and long-term statistical data on the flow of vehicles and the situation of road usage can be acquired efficiently.

Road traffic monitoring system

The present invention provides a method for manufacturing laminated material which can remove ear portions of a resin film extruded from an extruding machine and can directly laminate the resin film to a substrate and can make the processing of end portions of a laminated material after lamination unnecessary. The present invention also provides an apparatus used for such a manufacturing method. In the method for manufacturing laminated material which laminates a resin film formed by extruding molten thermoplastic resin from a T-die to a substrate, a laminating film is formed by cutting ear portions of the resin film before lamination and the laminating film is laminated to the substrate. Further, the apparatus for manufacturing laminated material according to the present invention comprises heating means which preheats a substrate, a T-die which extrudes molten thermoplastic resin as a resin film, cutting means which forms a laminating film by cutting ear portions of the resin film before lamination, lamination rolls which laminate the laminating film to the substrate, and a cooling device which quenches the formed laminated material.

Method and apparatus for manufacturing laminated material

A cable holder is deposited and fixed on an inner wall of a sewage pipe made of resin and supports an optical fiber for communication, which is passed through the pipe. The cable holder has a longitudinal section similar to that of an inverted pot and a narrowed inlet opening, and is provided with a pair of claws arranged in the axial direction of a pipe at its upper part. A cable holder driving device is raised in a state where the cable holder is heated and a pair of claws are pressure-fitted into the inner wall of the pipe. The pressure-fitting is carried out to such a degree that the cable fitted to and supported by the cable holder is brought into contact with the inner wall of the pipe. After the cable holder is cooled down and fixed, the cable passed through the pipe is pushed in the cable holder through its inlet opening.

Method for attaching cable and cable holder

The present invention provides a method for trimming a resin film which can recycle lug portions of the resin film after trimming, can easily trim the resin film even when the resin film is made of resin which becomes fragile by cooling, and enhance the use efficiency of a laminated sheet by making resin coated portions disposed at both sides of the laminated sheet thin. At the time of coating molten resin at least on one surface of a substrate to form a resin film after making the molten resin pass between coating rolls, the lug portions of the resin film are trimmed before the lug portions of the resin film are cooled.

Method for trimming resin film

Disclosed is a method of treatment with a microwave plasma by maintaining a reduced pressure in a plasma-treating chamber for treatment with a plasma in which a substrate that is to be treated with a microwave plasma is contained, introducing a treating gas into the plasma-treating chamber and introducing microwaves into the plasma-treating chamber, wherein a metallic antenna is disposed in the plasma-treating chamber. The plasma is generated within a very short period of time maintaining stability after the microwaves are introduced into the plasma-treating chamber, and the treatment is accomplished maintaining stability.

Method of treatment with a microwave plasma

A method of producing an extrusion-laminated member comprises extruding a thermoplastic resin from a T-die into the form of a film and laminating the film on a heated metallic base member using a pair of laminating rolls, wherein a pre-roll is disposed between the T-die and one of the laminating rolls to receive the film on the side opposite to the side that adheres onto the base member over the whole width of the film. The film is wound on the pre-roll at an angle (&agr;) of from 10 to 90 degrees. The film received by the pre-roll is fed to the laminating rolls, conveyed by being supported by the laminating rolls on the side opposite to the side that adheres onto the base member, and is fed to a nipping position so as to be melt-adhered onto the heated metallic base member.

Method of producing extrusion-laminated member

The process for producing a resin-metal laminate material of the present invention is characterized by comprising providing a heating zone for a metal substrate, a die for feeding a thermoplastic resin in a film form, a pair of temperate laminate rolls for adhering the thermoplastic resin to at least one surface of the metal substrate, and quenching means for quenching the resulting laminate material, along a passage for the metal substrate, supporting and conveying a molten film of the thermoplastic resin from the die with the corresponding temperate laminate rolls and feeding it to a nipping position between the temperate laminate rolls, and fusing the thin film of the thermoplastic resin to at least one surface of the heated metal substrate by means of the temperate laminate rolls. This method can lead to the formation of a uniform and thin-film resin coating on the metal substrate at a high speed, and in addition, the formed resin film has very high intimate adhesiveness and film properties.

Process for producing a resin-metal laminate

A shock resistant seamless can comprising a side wall having an inside surface and an outside surface formed from a laminate of a metal substrate and a thermoplastic resin layer provided on the inside surface of the can side wall, wherein the inner surface of the side wall resin layer opposite the metal substrate comprises a plurality of dotted projections.

Seamless can and process for making the same

Growing community of inventors

Yokohama, Japan

Akira Kobayashi