Mitsubishi Electric Corporation

Akira Kiyoi

Kenji Suzuki

Koichiro Nishizawa

Hidenori Koketsu

Yuki Haraguchi

Yusuke Miyata

Takuya Yoshida

Haruhiko Minamitake

Taiki Hoshi

A semiconductor device according to the present disclosure includes: a first conductivity-type silicon substrate including a cell part and a termination part surrounding the cell part in plan view; a first conductivity-type emitter layer provided on a front surface of the silicon substrate in the cell part; a second conductivity-type collector layer provided on a back surface of the silicon substrate in the cell part; a first conductivity-type drift layer provided between the emitter layer and the collector layer; a trench gate provided to reach the drift layer from a front surface of the emitter layer; and a second conductivity-type well layer provided on the front surface of the silicon substrate in the termination part. Vacancies included in a crystal defect in the cell part are less than vacancies included in a crystal defect in the termination part.

Semiconductor device and manufacturing method therefor

In a step, acceptor ions are implanted from a back surface of a semiconductor substrate. In a step, a wet process of immersing the semiconductor substrate in a chemical solution including hydrofluoric acid is performed, to introduce hydrogen atoms into the semiconductor substrate. In a step, proton radiation is provided to the back surface of the semiconductor substrate, to introduce hydrogen atoms into the semiconductor substrate and form radiation-induced defects. In a step, an annealing process is performed on the semiconductor substrate, to form hydrogen-related donors by reaction of the hydrogen atoms and the radiation-induced defects and reduce the radiation-induced defects.

Method of manufacturing semiconductor device, and semiconductor device

A semiconductor device manufacturing method of present application includes a catalytic step of depositing catalytic metal on a surface of a semiconductor substrate, an oxide removing step of removing oxide formed on the surface of the semiconductor substrate in the catalytic step, an additional catalytic step of depositing catalytic metal on the surface of the semiconductor substrate exposed in the oxide removing step, and a plating step of forming a metal film on the surface of the semiconductor substrate by means of an electroless plating method after the additional catalytic step.

Semiconductor device manufacturing method and semiconductor device

Growing community of inventors

Tokyo, Japan

Akira Kiyoi