Nichia Corporation

Akira Kitano

Masahiko Sano

Masatsugu Ichikawa

Yukitoshi Marutani

Hiroaki Matsumura

Yukio Narukawa

Tomotsugu Mitani

Kazuyuki Akaishi

Hitoshi Maegawa

Takao Misaki

Susumu Harada

Ken Katsuragi

Koji Honjo

It is an object of the present invention to provide a nitride semiconductor element, which uses Si as a substrate, and whose voltage in the forward direction (Vf) is lower than in the prior art. In the nitride semiconductor element which has a nitride semiconductor layer over an Si substrate, at least a portion of the Si substrate and the nitride semiconductor layer are included in an current pass region, and the electrical conductivity type of the current pass region on the Si substrate is p-type. Furthermore, in the nitride semiconductor element which has a nitride semiconductor layer over an Si substrate, at least a portion of the Si substrate and the nitride semiconductor layer are included in an current pass region, and the majority carriers of the current pass region of the Si substrate are holes.

Nitride semiconductor element having a silicon substrate and a current passing region

A nitride semiconductor laser element exhibits high-speed responsiveness by largely reducing the capacitance of the nitride semiconductor laser element. The nitride semiconductor laser element includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer each laminated on the main surface of the substrate. The nitride semiconductor laser element further includes a striped ridge portion formed in the p-type semiconductor layer, and pn-junctions of the semiconductor layer in the peripheral region remote from the ridge portion are broken by ion implantation to form an insulative region for reducing the capacitance of the element.

Nitride semiconductor laser element

To provide a point emission type light emitting element that restricts the light emitting area within a sufficiently tiny region and can be manufactured at a low cost, the point emission type light emitting element is a light emitting element that has stripe ridge comprising an n-type layer, an active layer and a p-type layer that are formed from semiconductors on a substrate, so as to emit light from one end face of the stripe ridge, wherein the stripe ridge has a protruding portion on the end face described above and the surface of the light emitting element is covered with an shading film except for the tip of the protruding portion.

Point emission type light emitting element and concentrating point emission type light emitting element

Growing community of inventors

Komatsushima, Japan

Akira Kitano