Nkk Corporation

Jfe Steel Corporation

Akira Kazama

Takahiko Oshige

Tsutomu Kawamura

Shoji Yoshikawa

Takeo Yamada

Makoto Suzuki

Kenji Araki

Hiroshi Kamio

Mitsuaki Uesugi

Yoshinobu Shima

Masaichi Inomata

Masahiro Iwabuchi

Shinichi Tomonaga

Shuji Kaneto

Shigetake Horie

Shigemi Fukuda

Osamu Uehara

Hajime Tanaka

Shuichi Harada

Yasuo Kushida

Tsuneo Suyama

Hiroyuki Sugiura

Yasumitsu Nakahama

Takeshi Yamazaki

Jun Sakai

Kaoru Tanaka

Yoshiro Yamada

Yuji Matoba

Takamitsu Takayama

Shuichiro Nomura

A surface inspection method for a steel sheet coated with a resin, includes irradiating the steel sheet with sheet-like light, which has been linearly polarized at a predetermined polarization angle, at an incidence angle different from Brewster's angle of the coating by a predetermined angle or greater; and imaging linearly-polarized light of a polarization angle of 0 degrees at an acceptance angle different from a regular reflection angle of incident light by a predetermined angle. Accordingly, it is not necessary to change the incidence angle and the acceptance angle depending on resin components and it is possible to inspect a substrate steel surface of the steel sheet highly accurately without observing abnormalities in the coating itself.

Surface inspection method and surface inspection apparatus for steel sheet coated with resin

A defect marking device includes a flaw inspection device which has a plurality of light-receiving parts that identify reflected lights coming from an inspection plane of a metal strip under two or more of optical conditions different from each other; a signal processing section that judges the presence/absence of surface flaw on the inspection plane based on a combination of reflected light components identified under these optical conditions different from each other; and a marking device which applies marking that indicates information relating to the flaw on the surface of the metal strip.

Method for marking defect and device therefor

The defect marking method comprises the steps of: installing a surface defect tester to detect surface flaw and a marker device to apply marking at defect position, in a continuous processing line of steel sheet; detecting the surface flaw on the steel sheet using the surface defect tester; determining defect name, defect grade, defect length, and defect position in the width direction of the steel sheet, on the basis of thus detected flaw information, further identifying the defect in terms of harmful defect, injudgicable defect, and harmless defect; applying tracking of the defect position for each of the harmful defect and the injudgicable defect; and applying marking to the defect position. The defect marking device comprises a defect inspection means having plurality of light-receiving parts and a signal processing section, and a marking means.

A method for detecting a surface flaw which includes the steps of (i) irradiating polarized light to a surface of a sample to be inspected and determining ellipso-parameters (.PSI., .DELTA.) of reflected light from the surface of the sample; (ii) irradiating light to a same position as irradiated by the polarized light and determining the intensity (I) of reflected light from the surface of the sample; and (iii) determining a type and grade of a flaw on the surface of the sample based on the ellipso-parameters (.PSI.,.DELTA.) and the reflected light intensity (I). A surface flaw detecting apparatus includes (i) a first measuring device for irradiating polarized light to a surface to be inspected and measuring ellipso-parameters (.PSI.,.DELTA.) of reflected light from the surface; (ii) a second measuring device for irradiating light to a same position as irradiated by the polarized light and measuring the intensity (I) of reflected light from that position; and (iii) an output device for outputting a three-dimensional coordinate position of .PSI., .DELTA., I representing the reflected light from the surface, while sorting the position into a preset zone.

Method and apparatus for detecting surface flaws

Ellipsometer and method of controlling coating thickness therewith

Movable optical parts included in an ellipsometer are omitted to increase the measurement speed and maintain constant, high measurement precision in film thickness measurement processing. A beam is radiated from a light source section onto a measurement target. A reflected beam having an elliptically polarized beam reflected by the measurement target is divided into four light components polarized in different directions. The optical intensities of the respective polarized light components are detected. Of the four detected optical intensities, one having the minimum value is omitted, and ellipsometric parameters .psi. and .DELTA. are calculated by using the remaining three optical intensities having the largest values. The ellipsometer comprises only stationary optical parts without using any movable optical parts. The polarization directions of the respective polarized light components, from which four optical intensities are obtained, are set at angles of 90.degree., 0.degree., +45.degree., and -45.degree. with respect to a reference direction. A composite beam splitter is used to extract the four polarized light components.

Measuring method for ellipsometric parameter and ellipsometer

Movable optical parts included in an ellipsometer are removed to increase the measurement speed, and a specific quadrant to which a phase difference .DELTA. as an ellipsometric parameter belongs is determined by one measuring operation. A beam is radiated from a light source section onto a measurement target, and the reflected beam having an elliptically polarized beam, which is reflected by the target, is divided into four different polarized light components. The optical intensities of the respective light components are then detected. Ellipsometric parameters .psi. and .DELTA. are calculated on the basis of the detected four optical intensities. In addition, the above-mentioned four different polarized light components are obtained by using a wave plate. Furthermore, the polarization directions of the four polarized light components whose optical intensities are obtained are respectively set at angles -45.degree., +45.degree., 90.degree., and 0.degree. with respect to a reference direction. Alternatively, a composite beam splitter is used to obtain four polarized light components.

According to the present invention, the inside of a crucible in which a molten raw material is placed is partitioned off with a partition ring so that a pulled single crystal is surrounded and the molten raw material may be moved and granular silicon is supplied to the outside of the partition ring, thereby to form the whole surface of outside molten liquid as a granular silicon soluble region so as to maintain the molten liquid surface on the inside of the partition ring at almost a constant level, and also to set the temperature of the molten liquid on the outside of the partition ring higher than the temperature of the inside thereof at least by 10.degree. C. or higher by covering the partition ring and the molten liquid surface on the outside thereof with a heat keeping board.

Manufacturing method and equipment of single silicon crystal

Method for manufacturing a large columner silicon single crystal having a diameter of 12 cm-30 cm by pulling up a crystal, growing, and rotating it in one direction, from molten silicon material in a quartz crucible rotating in the other direction. The inside of the quartz crucible is divided into two sections--the peripheral section for feeding and melting raw materials and the central section for growing and pulling the crystal--by means of a cylindrical partition. The material feeding and melting section and the partition are sufficiently covered by an insulating board to reduce radiant energy heat loss and to keep the temperature at least above the freezing point of the molten materials in order to prevent the molten materials from solidifying at or around the inner wall of the cylindrical partition.

The present invention relates to a method and apparatus for manufacturing silicon single crystals by the Czochralski method, including the steps of dividing a crucible containing molten silicon into an inner single crystal growing section and an outer material feeding section to allow said molten silicon to move slowly, and pulling a silicon single crystal from said single crystal growing section while continuously feeding silicon starting material to said material feeding section, the improvement wherein temperatures of said material feeding section and said molten silicon are maintained higher than a melting point of silicon by at least more than 12.degree. C.

Method and apparatus for manufacturing silicon single crystals

Growing community of inventors

Kawasaki, Japan

Akira Kazama