Idemitsu Kosan Company, Limited

Akira Kaijo

Kazuyoshi Inoue

Nobuo Tanaka

Koki Yano

Satoshi Umeno

Tokie Tanaka, Legal Representative

Shigekazu Tomai

Masato Matsubara

Tadao Shibuya

A sputtering target which is composed of a sintered body of an oxide which contains at least indium, tin, and zinc and includes a spinel structure compound of ZnSnOand a bixbyite structure compound of InO. A sputtering target includes indium, tin, zinc, and oxygen with only a peak ascribed to a bixbyite structure compound being substantially observed by X-ray diffraction (XRD).

Sputtering target, transparent conductive film and transparent electrode

A transparent conductive film including an indium oxide, a tin oxide and at least one lanthanoid metal oxide, the film including a portion connected to a conductor, and at least the connection portion having crystallinity.

Transparent conductive film, and substrate, electronic device and liquid crystal display using the same

A sputtering target which is formed of a sintered body including an oxide main components of which are In and Sm. A sputtering target in which a sintered body of an oxide including In and Sm as main components is doped with at least one element with an atomic valency of positive tetravalency or higher in an amount of 20 at. % or less relative to the total sum of all cation elements.

In Sm oxide sputtering target

In a sputtering target comprising at least indium oxide and zinc oxide, the atomic ratio represented by In/(In&plus;Zn) is set to a value within the range of 0.75 to 0.97, a hexagonal layered compound represented by In O (ZnO) wherein m is an integer of 2 to 20 is contained, and the crystal grain size of the hexagonal layered compound is set to a value of 5 &mgr;m or less.

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Sodegaura, Japan

Akira Kaijo