Other

Kyushu Institute of Technology

Nec Corporation

Shin-etsu Chemical Co., Ltd.

Mitsui Chemicals, Inc.

Anelva Corporation

Hideki Matsumra

Akira Izumi

Hideki Matsumura

Atsushi Masuda

Yasunobu Nashimoto

Yosuke Miyoshi

Shuji Nomura

Kazuo Sakurai

Shouichi Aoshima

Masamichi Ishihara

Masatoshi Takahashi

Hiroyuki Ohtsuka

Kimihiko Saitoh

A solar cell () comprising a semiconductor solar cell substrate () having a light receiving surface formed on the first major surface and generating photovoltaic power based on the light impinging on the light receiving surface, wherein the light receiving surface of the semiconductor solar cell substrate () is coated with a light receiving surface side insulating film () composed of an inorganic insulating material where the cationic component principally comprising silicon, and the light receiving surface side insulating film () is a low hydrogen content inorganic insulating film containing less than 10 atm % of hydrogen. A solar cell having an insulating film exhibiting excellent passivation effect insusceptible to aging can thereby be provided.

Solar cell and method of fabricating the same

A gas inlet is disposed in a lower portion of a reaction chamber, a copper substrate is disposed in an upper portion thereof, and a tungsten catalytic body heated to 1600&#xb0; C. is disposed midway between the two. Ammonia gas introduced from the gas inlet is decomposed by the tungsten catalytic body, a chemical species generated by the decomposition reacts with a surface of the copper substrate, and reduces and removes a contaminant on the copper surface, and a CuN thin film is formed on the copper substrate surface. This CuN film has the action of a film which prevents the oxidation of copper. This CuN film is thermally decomposed and removed when heated to temperatures of not less than 300&#xb0; C., leaving a clean copper surface behind.

Method for processing copper surface, method for forming copper pattern wiring and semiconductor device manufactured using such method

The present invention provides a packaged stacked semiconductor device which includes bumps serving as external electrode terminals, the bumps being provided on both a front surface and a back surface of the device, and which is sacked on another semiconductor device, substrate, or board having electrode terminals so that the bumps are directly and electrically connected to the electrode terminals. The semiconductor device includes a semiconductor substrate having through-electrodes formed therein. The semiconductor device has, on the front surface side of the semiconductor substrate, a wiring layer connected to the through-electrodes, an insulating film formed on the wiring layer, additional wiring formed on the insulating film, post electrodes connected to the wiring, and external connection bumps connected to the post electrodes. The semiconductor device has, on the back surface side of the semiconductor substrate, an insulating film formed so as to cover the back surface of the semiconductor substrate, exclusive of tip end portions of the through-electrodes, wiring which is formed on the insulating film and to which the through-electrodes are connected, and external connection bumps connected to the wiring.

Packaged stacked semiconductor device and method for manufacturing the same

This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 10 eV cm or less, which is brought by the above pre-treatment in the insulator film deposition process.

Method and apparatus for depositing a thin film, and semiconductor device having a semiconductor-insulator junction

A semiconductor thin film including a well layer is laminated on a semiconductor substrate, the semiconductor substrate and the semiconductor thin film is cleaved, and a cleavage plane of the semiconductor substrate and the semiconductor thin film, which is obtained by the cleaving, is exposed to an atmosphere produced by decomposition of a gas containing N-atoms under the presence of a heated catalytic substance, thereby a surface layer of the cleavage plane is removed and a nitride layer is formed on the surface. Subsequently, a dielectric film is formed on the cleavage plane. According to the above technique, a natural oxide film formed on the cleavage plane can be removed and also a protective film can be formed by using a catalytic CVD apparatus.

Method for manufacturing semiconductor laser device

This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 10.sup.12 eV .sup.-1 cm.sup.-2 or less, which is brought by the above pre-treatment in the insulator film deposition process.

Method for depositing a thin film

Growing community of inventors

Kitakyushu, Japan

Akira Izumi