National Institute of Advanced Industrial Science and Technology

Agency of Industrial Science and Technology

Japan Science and Technology Agency

Kagoshima University

Tokyo University of Science

Akira Iyo

Yasumoto Tanaka

Tsuneo Watanabe

Kazuyasu Tokiwa

Norio Terada

Hideo Ihara

Adrian Crisan

Masayuki Hirabayashi

Naoto Kikuchi

Parasharam Shirage

Shiro Kawabata

Athinarayan Sundaresan

Dilip Shivagan

A control method is proposed that controls inter-component phase difference solitons by using splitting or fusion caused by the interaction between inter-component phase difference solitons themselves, without the need for application of external energy. By using a line structure () in which an inter-component phase difference soliton propagation line through which an inter-component phase difference soliton (So) which can exist in a superconducting environment can travel is divided into a plurality of branch lines (-and-) at least at a branch end (Po) set in the middle of the line, an inter-component phase difference soliton (So) in a main line (M) which is an undivided line portion is allowed to be split and to enter the plurality of branch lines (-and-) without a supply of external energy, or inter-component phase difference solitons (Soand So) in the respective branch lines (-and-) are fused together without a supply of external energy, whereby an inter-component phase difference soliton (So) is allowed to propagate through the main line (M).

Method for controlling inter-component phase difference soliton and inter-component phase difference soliton circuit device

A method of searching for a material fated to generate an interband phase difference soliton includes the steps of generating an AC in a soliton candidate material, identifying a loss of AC magnetic susceptibility of the siliton candidate material due to a turn and a twist cut of a vortex line and judging whether or not the soliton candidate material is capable of generating soliton.

Method for searching for material generating interband phase difference soliton

The length portion of part of a multiband superconductor lineis used as a closed circuit line part Rc that constitutes part of a closed circuit allowing passage of an electric current Io generated by an electric current source. Meantime, the line part extending and continuing into the closed circuit line part Rc is used as an open circuit line part Ro adapted to serve as an open circuit regarding the electric current source. By keeping the multiband superconductor lineunder a temperature environment falling short of the critical soliton temperature and injecting a nonequilibrium electric current Io from the electric current sourceinto the closed circuit line part of the multiband superconductor line, it is rendered possible to induce generation of an interband phase different soliton So. The generated interband phase difference soliton So is forwarded as separated from the electric current Io to the open circuit line part Ro and is made to run therein. The open circuit line part Ro is provided with a Josephson junctionand consequently enabled to induce extinction of the interband phase different soliton So that has advanced thereto, during which time the voltage generated by the AC Josephson effect is detected with the voltage detecting device

Method of generation and method of detection of interband phase difference solition and interband phase difference circuit

A quantum Turing machine constituted using a quantum bit created by localizing a phase difference soliton S between superconducting electrons existing in each of multiple of bands in a ring Rthat includes a ring main body Rformed of a superconductor, and well-shaped portions W, Wformed with a reduced line-width at at least two positions on the ring main body R, can easily constitute a quantum bit, can surely execute a basic logical operation, has multiple-bit capability and, moreover, can ensure sufficient time for executing a quantum algorithm.

Quantum turing machine

A process for preparing a superconductor which is a low anisotropy, high temperature superconductor, includes providing a target in molded form comprised of one of the superconductor or constituent elements of the superconductor, the superconductor having a layered crystal structure, having a superconducting transition temperature, Tc, of 110 K or more, and having a composition expressed by Cu,M,Ae,Ca,Cu,O,where M is at least one member selected from the group consisting of (a) a trivalent ion of Tl, and (b) polyvalent ions of Mo, W, and Re, Ae is at least one of Ba and Sr, x ranges from 1 to 10, and y ranges from 2x&plus;1 to 2x&plus;4, and z ranges from 0<z&lE;0.5; and forming a film of the superconductor from the target on a substrate by one of sputtering or laser abrasion.

Process for the preparation of a high temperature superconductor

A high temperature superconductor which has a layered crystal structure, which has a superconducting transition temperature, Tc, of 110 K or more, and which has a composition expressed by:

High temperature superconductor

Growing community of inventors

Tsukuba, Japan

Akira Iyo