Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Akira Ishiguro

Yoshihiko Fuji

Ryohei Nega

Hiroshi Katsuno

An isolator includes a first insulating portion, a first electrode provided in the first insulating portion, a second insulating portion provided on the first insulating portion and the first electrode, a third insulating portion provided on the second insulating portion, and a second electrode provided in the third insulating portion. The second insulating portion includes a plurality of first voids and a second void. The plurality of first voids are arranged in a first direction parallel to an interface between the first insulating portion and the second insulating portion. At least one of the first voids is provided under the second void.

Isolator

An isolator includes a first electrode; a first insulating portion on the first electrode; a second electrode on the first insulating portion; a second insulating portion around the second electrode; and a first dielectric portion on the second electrode and the second insulating portion. The second insulating portion is provided along a first plane perpendicular to a first direction from the first electrode toward the second electrode. The second electrode including a bottom surface facing the first insulating portion, an upper surface facing the first dielectric portion, a first side surface connected to the bottom surface, and a second side surface connected to the upper surface and the first side surface. The upper surface is wider than the bottom surface in a second direction along the first plane. The first side surface is tilted with respect to the bottom surface and the second side surface.

A semiconductor light emitting element of an embodiment includes a laminated body having first, second, and third semiconductor layers stacked on each other in a first direction, the third semiconductor layer being between the first and second semiconductor layers in the first direction. The laminated body includes a first region and a second region spaced from the first region a second direction which intersects the first direction. The first electrode is electrically connected to the first semiconductor layer. The second electrode is disposed between the first region and the second region along the second direction. The first conductive layer electrically connects the second semiconductor layer and the second electrode to each other. An outer edge of the first conductive layer is positioned inside an outer edge of the laminated body.

Semiconductor light emitting element with conductive layer having outer edge positioned inside outer edge of laminated body

In a method of manufacturing a thin-film magnetic device having a magnetic film provided with uniaxial magnetic anisotropy, the magnetic film, which is formed on a Si wafer, is patterned, before it is heat-treated in a magnetic field, in such a manner that the length of the magnetic film in a direction parallel to that of the magnetic field is greater than the length of the magnetic film in a direction perpendicular thereto. The magnetic film is divided into band-like magnetic films, and the band-like magnetic films are heat-treated in the magnetic field and each provided with uniaxial magnetic anisotropy. The band-like magnetic films are patterned and each divided again into magnetic films of a chip size. Thus, a crack or a blister can be prevented from occurring on the magnetic film, and the magnetic characteristics of the magnetic film can be prevented from deteriorating.

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Oita Oita, Japan

Akira Ishiguro