Hitachi, Ltd.

Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Hitachi Chemical Company, Ltd.

Akira Ikegami

Hideyuki Kazumi

Yuta Kawamoto

Takahiro Sato

Minoru Yamazaki

Makoto Ezumi

Momoyo Enyama

Hideo Arima

Hideto Dohi

Kazunari Asao

Yoichi Ose

Hiromi Tosaki

Hideo Todokoro

Naomasa Suzuki

Tokio Isogai

Ritsuo Fukaya

Yasushi Ebizuka

Tatsuaki Ishijima

Manabu Yano

Hirayoshi Tanei

Koichiro Takeuchi

Toshio Ogawa

Nobuo Sato

Osamu Nasu

Yasuhiro Shirasaki

Shoichi Iwanaga

Naoma Ban

Nobuyuki Sugishita

Tadamichi Asai

Satoru Iwama

Teruo Mozume

Yuki Ojima

Osamu Ito

Sadayasu Ueno

Mitsuru Hasegawa

Hisaya Murakoshi

Atsushi Kobaru

Takanobu Noro

Takeshi Mizuno

Junichi Kakuta

Mituru Fujii

Ichiro Tsubokawa

Hiroshi Ohtsu

Seiko Oomori

Nobuo Fujinaga

Takeshi Morimoto

Muneyuki Fukuda

Yasunari Sohda

Hajime Kawano

Jun Yamada

Takao Sasayama

Yutaka Nishimura

Takashi Namekawa

Yuko Sasaki

Masayuki Miki

Seiko Suzuki

Makoto Sakakibara

Noritsugu Takahashi

Masayoshi Kaneyasu

Yoshimi Yamamoto

Tomoyasu Shojo

Kanemasa Sato

Katsuo Abe

Toshikazu Nishiyama

Yoshitaka Matsuoka

Yasuji Kamata

Ryota Watanabe

Teizo Tamura

Takeo Nagata

Tsutomu Okayama

Noriyuki Taguchi

Seiichi Yamada

Masahiro Fukuta

Yutaka Tandai

Takao Kobayashi

Takashi Dobashi

Mitsuo Ai

Kazuhiko Ato

Takashi Naitoh

Mitsuko Ito

Toshitaka Suzuki

Katsuo Ebisawa

Yoshishige Endoh

Michio Ootani

Ryuji Nishi

Kiyoshi Sakashita

Akio Takaoka

Mituko Ito

Kiyoshi Kawabata

Hiromi Isonae

Hiroshi Otsu

Ryoo Gotoo

A photoelectron emission microscope reducing preparation time for capturing a photoelectron image with high luminance and resolution. The photoelectron emission microscope includes: a sample stage on which a sample is to be placed; an excitation light source configured to irradiate the sample with excitation light; a camera configured to detect photoelectrons emitted from the sample and capture a photoelectron image; an objective lens configured to focus the photoelectrons on a detection surface of the camera; and a control unit configured to control each unit, in which the control unit aligns, based on a luminance distribution of a first photoelectron image, a field-of-view center of the camera with an irradiation position of the excitation light, and aligns, based on a second photoelectron image and a third photoelectron image that are captured by changing a lens intensity of the objective lens, the field-of-view center with a central axis of the objective lens.

Photoelectron emission microscope

A charged particle beam device includes a plurality of detectors configured to detect one or more signal charged particle beams caused by irradiation on a sample with one or more primary charged particle beams, and a control system. The control system is configured to measure an intensity distribution of the one or more signal charged particle beams detected by the plurality of detectors, and correct the intensity distribution by using a correction function. The control system is configured to generate an image based on the corrected intensity distribution.

Charged particle beam device

Provided is a projection electron beam application apparatus suitable for use in semiconductor manufacturing lines. An electron optical system of the electron beam application apparatus includes a mirror aberration correctordisposed perpendicular to an optical axis, a plurality of magnetic field sectorsby which an orbit of electrons is deviated from the optical axis to make the electrons incident on the mirror aberration corrector, and the orbit of the electrons emitted from the mirror aberration correctoris returned to the optical axis, and a doublet lensdisposed between adjacent magnetic field sectors along the orbit of the electrons. The plurality of magnetic field sectors have the same deflection angle for deflecting the orbit of the electrons, and the doublet lens is disposed such that an object plane and an image plane thereof are respectively central planes of the adjacent magnetic field sectors along the orbit of the electrons.

Electron beam application apparatus

An object of the present disclosure is to provide a charged particle beam apparatus that can quickly find a correction condition for a new aberration that is generated in association with beam adjustment. In order to achieve the above object, the present disclosure proposes a charged particle beam apparatus configured to include an objective lens () configured to focus a beam emitted from a charged particle source and irradiate a specimen, a visual field movement deflector (and) configured to deflect an arrival position of the beam with respect to the specimen, and an aberration correction unit (and) disposed between the visual field movement deflector and the charged particle source, in which the aberration correction unit is configured to suppress a change in the arrival position of the beam irradiated under different beam irradiation conditions.

Charged particle beam apparatus

The present disclosure aims at proposing a multi-beam irradiation device capable of correcting off-axis aberrations. In order to achieve the above object, a beam irradiation device is proposed, which includes a beam source which emits a plurality of beams; an objective lens () which focuses a beam on a sample; a first lens () which is arranged such that a lens main surface is positioned at an object point of the objective lens and deflects a plurality of incident beams toward an intersection point of a lens main surface of the objective lens and an optical axis; a second lens () which is arranged closer to a beam source side than the first lens and focuses the plurality of beams on a lens main surface of the first lens; and a third lens () which is arranged closer to the beam source side than the second lens and deflects the plurality of beams toward an intersection point of a lens main surface of the second lens and the optical axis.

Beam irradiation device

To provide a charged particle beam device capable of preventing generation of geometric aberration by aligning axes of electrostatic lenses with high accuracy even when center holes of respective electrodes which constitute the electrostatic lens are not disposed coaxially. The charged particle beam device according to the invention includes an electrostatic lens disposed between an acceleration electrode and an objective lens, wherein at least one of the electrodes which constitutes the electrostatic lens is formed of a magnetic body, and two or more magnetic field generating elements are disposed along an outer periphery of the electrode.

Charged particle beam device and electrostatic lens

A charged particle beam application apparatus includes a beam separator. The beam separator includes a first magnetic pole, a second magnetic pole facing the first magnetic pole, a first electrode and a second electrode that extend along an optical axis of a primary beam and are arranged in a first direction perpendicular to the optical axis, on a first surface of the first magnetic pole which faces the second magnetic pole, and a third electrode and a fourth electrode that extend along the optical axis and face the first electrode and the second electrode, respectively, on a second surface of the second magnetic pole which faces the first magnetic pole.

Charged particle beam application apparatus

The objective of the present invention is to provide a charged-particle beam device capable of moving a field-of-view to an exact position even when moving the field-of-view above an actual sample. In order to attain this objective, a charged-particle beam device is proposed comprising an objective lens whereby a charged-particle beam is focused and irradiated onto a sample; a field-of-view moving deflector for deflecting the charged-particle beam; and a stage onto which the sample is placed. The charged-particle beam device is equipped with a control device which controls the lens conditions for the objective lens in such a manner that the charged-particle been focuses on the sample which is to be measured; moves the field-of-view via the field-of-view moving deflector while maintaining the lens conditions; acquires a plurality of images at each position among a reference pattern extending in a specified direction; and uses the plurality of acquired images to adjust the signal supplied to the field-of-view moving deflector.

Charged-particle beam device

The present invention enlarges a range of movement of field of view by beam deflection with a simple deflector configuration and suppresses deterioration of a signal electron detection rate caused by the beam deflection. A scanning electron microscope according to the present invention is provided with a first deflection field setting module that sets plural deflectors to move a scanning area on a specimen by a primary electron beam to a position deviated from an axis extended from an electron source toward the center of an objective lens and a second deflection field setting module that sets the plural deflectors so that trajectories of signal electrons are corrected without changing the scanning area set by the first deflection field setting module. The control unit controls the plural deflectors by adding a setting value set by the second deflection field setting module to a setting value set by the first deflection field setting module.

Scanning electron microscope

A purpose of the present invention is to provide a charged particle beam device that suppresses an off-axis amount when a field of view moves, said move causing an aberration, and allows large field of view moves to be carried out. In order to achieve the above-mentioned purpose, this charged particle beam device is provided with an objective lens and deflectors for field of view moves, said deflectors deflecting a charged particle beam, and is further provided with an accelerating tube positioned between the objective lens and the deflectors for field of view moves, a power source that applies a voltage to the accelerating tube, and a control device that controls the voltage to be applied to the power source in response to the deflection conditions of the deflectors for field of view moves.

In a charged particle beam device including an objective lens that focuses a charged particle beam; a first deflector that deflects the charged particle beam to emit the charged particle beam to a sample from a direction different from an ideal optical axis of the objective lens; and a second deflector that deflects a charged particle emitted from the sample, a charged particle focusing lens to focus the charged particle emitted from the sample is disposed between the sample and the second deflector and strengths of the objective lens and the charged particle focusing lens are controlled, according to deflection conditions of the first deflector.

An object of the invention is to provide a charged particle beam apparatus which can perform optimized adjustment of a focusing condition of a charged particle beam focused on a sample and optimized adjustment of an orbit of a charged particle emitted from the sample. In order to achieve the above-described object, there is provided a charged particle beam apparatus including a passage restriction member that partially restricts passage of a charged particle emitted from a sample, a first lens that is arranged between the passage restriction member and the sample, and that controls an orbit of the charged particle emitted from the sample, and a second lens that is arranged between the passage restriction member and the charged particle source, and that changes a focusing condition of the charged particle beam in accordance with a control condition of the first lens.

The charged particle beam application device is provided with a charged particle source and an objective lens that converges charged particle beam generated by the charged particle source onto a sample. In this case, the charged particle beam application device is further provided with an aberration generating element installed between the charged particle beam source and the objective lens, a tilt-use deflector installed between the aberration generating element and the objective lens, a deflection aberration control unit for controlling the aberration generating element, a first electromagnetic field superposing multipole installed between the aberration generating element and the objective lens, and an electromagnetic field superposing multipole control unit for controlling the first electromagnetic field superposing multipole. The aberration generating element has such a function that when the charged particle beam is tilted relative to the sample by the tilt-use deflector, a plurality of resulting aberrations are cancelled with one another. Moreover, the first electromagnetic field superposing multipole has a function to change the orbit of a charged particle beam having energy different from that of the main charged particle beam in the charged particle beam.

Charged particle beam application device

Growing community of inventors

Mito, Japan

Akira Ikegami