Dainichiseika Color & Chemicals Mfg. Co., Ltd.

Nec Corporation

Elpida Memory, Inc.

Dentsu Inc.

Other

Dentsu Tec, Inc.

Na-ru Corporation

Akira Hoshino

Mikio Saji

Kozaburo Hayashi

Isamu Yamaguchi

Takeshi Watanabe

Mitsunari Sukekawa

Masayuki Hamada

Masao Takebayashi

Shigeaki Fujii

Keiji Yanagiya

Hisashi Inaba

Mitsunori Kikutake

Jun Naito

Yoshio Abe

Shojiro Horiguchi

Kanta Saino

Tsutomu Hayakawa

Shinichi Horiba

Hisashi Marouka

Hisashi Maruoka

Masayuki Sibata

Takae Ogiwara

A theater () can be divided into a plurality of booths () by booth partition walls (). By moving the booth partition walls (), the plurality of booths () are combined to form a combined theater (). When the theater () is divided in the plurality of booths (), each booth () provides a booth picture in which images of visitors seated in the booth () are incorporated as characters. The combined theater () provides a combined-theater picture with the use of screens () of all the booths (). Each booth () provides a default picture when a fault occurs in the function of generating a booth picture.

Attraction system and attraction providing method

A stacked capacitor formed in a capacitor hole includes a bottom electrode, capacitor insulation film and a top electrode. The bottom electrode includes a plurality of islands formed on an underlying insulating film, and a metallic film covering the islands on the underlying insulating film. The larger surface of the bottom electrode increases the capacitance of the stacked capacitor.

Semiconductor device including a stacked capacitor

There is provided a method of fabricating a gate electrode, including the steps of (a) forming a gate oxide film at a surface of a semiconductor substrate, (b) forming a multi-layered structure on the gate oxide film, the multi-layered structure including a polysilicon layer formed on the gate oxide film, a refractive metal silicide layer formed on the polysilicon layer, and a silicon nitride layer formed on the refractive metal silicide layer, (c) thermally annealing the multi-layered structure in a nitrogen atmosphere to thereby form a silicon nitride film on sidewalls of the polysilicon layer and the refractive metal silicide layer, and (d) oxidizing the semiconductor substrate and the multi-layered structure.

Gate electrode and method of fabricating the same

A deodorant and antimicrobial composition comprises an oxide or hydroxide of an alkaline earth metal, hydrated silica, and a cationic surfactant. A deodorant and antimicrobial resin composition can be obtained using the deodorant and antimicrobial composition and a thermoplastic resin. This deodorant and antimicrobial resin composition can be molded or otherwise formed.

Deodorant and antimicrobial compositions

A semiconductor memory device includes a capacitive insulating film and an upper electrode formed at the inner surface of the cylindrical lower electrode to form a capacitive cell. Near the capacitive cell, a groove with the same depth as that of the capacitive cell is formed and electric conductive layers are formed at the inner surface thereof. The electric conductive layer and upper electrode are connected by the upper electrode extending part. At the bottom of the groove, the upper electrode contact is connected to the electric conductive layer.

Semiconductor memory device and manufacturing method and mask data preparing method for the same

A deodorant and antimicrobial dispersion is formed of a deodorant and antimicrobial component, a binder resin and an aqueous or oily liquid medium. The deodorant and antimicrobial component comprises an oxide or hydroxide of an alkaline earth metal, hydrated silica, and a cationic surfactant.

Deodorant and antimicrobial dispersions

An insulation layer is formed on a semiconductor substrate and has a groove for formation of a wiring layer in a predetermined region. A barrier metal is formed on an inner wall of the groove and prevents diffusion of atoms constituting the wiring layer , into the insulation layer . A seed layer is formed on the barrier metal formed at the bottom of the groove and serves as a kernel of crystal growth when forming the wiring layer . The seed layer has crystal orientation of (1 1 1) as a dominant. The wiring layer is formed to bury the groove . Moreover, the wiring layer has crystal orientation of (1 1 1) as a dominant, which suppresses electromigration.

Semiconductor device and production method thereof

Antimicrobial agents comprise 2,2,6,6-tetramethyl-4-piperidine derivatives. When added to resins, these antimicrobial agents provide antimicrobial resin compositions, which in turn provide antimicrobial articles. These antimicrobial agents provide resins, synthetic fibers or the like with not only outstanding antimicrobial activity but also excellent heat resistance, weatherability and deterioration resistance without impairing the transparency and safety of these materials.

Antimicrobial agents, antimicrobial resin compositions, and articles having antimicrobial activity

A Ti film is formed on a semiconductor substrate having an element formed on the surface thereof by a sputtering method by using an ordinary DC magnetron sputtering unit under the conditions where Ar gas pressure is 1 mTorr and DC power is 4.4 kW. Under these conditions, the Ti film is formed as a continuous film within one second from the start of discharge so that if the Ti film is charged with secondary electrons generated by plasma used in sputtering, local charge-up does not occur. Thereafter, sputtering is continued and a Ti film of about 300 .ANG. in thickness is formed on the entire surface. Hence, secondary plasma electrons are prevented form causing the breakdown of an insulating film of the element.

Method for manufacturing a semiconductor device

A sputtering apparatus contains a sputtering reaction chamber. A target is provided in the sputtering reaction chamber. A shielding plate is provided in the vicinity of the target. An emitter is electrically connected to the shielding plate for causing ionized sputter-particles and neutral sputter-particles to be emitted from the target and dropped at various angles into an under-space positioned under the target and in the sputtering reaction chamber. A substrate holder is provided in the sputtering reaction chamber. The substrate holder is laterally distanced from the under-space for holding a substrate so that a surface of the substrate is vertical. A generator is provided for generating a static field in a lateral direction to be applied across a laterally extending space which includes the substrate holder and the under-space so that the static field does laterally accelerate only the ionized sputter-particles toward the substrate held by the substrate holder for a lateral deposition of the ionized sputter-particles onto the surface of the substrate.

Sputtering apparatus for forming a conductive film in a contact hole of

Described is a method for producing a colored silk filament by having a colorant solution absorbed through the spiracles of each silkworm larva and then allowing the larva to secrete the colored silk filament through the spinneret thereof. In this method, a solution of a polymer-linked dyestuff is employed as the colorant solution.

Production of colored silk filament

A deodorizing resin composition is composed of 99.9-50 parts by weight of a thermoplastic resin and 0.1-50 parts by weight of a deodorizing ingredient. The deodorizing ingredient is a white or substantially colorless deodorizing agent, which may preferably be composed of 10-90 parts by weight of a zinc compound and 90-10 parts by weight of an aliphatic polycarboxylic acid or a salt thereof, an aromatic polycarboxylic acid or a salt thereof, an acidic polymer or a salt thereof, or a sulfate of aluminum. A formed deodorizing article can be obtained by forming or molding the deodorizing resin composition into a desired shape. Formed articles of the deodorizing resin composition of this invention can have desired beautiful colors and are adapted to absorb offensive odors.

Deodorizing resin compositions and formed deodorizing articles

A deodorizing coating formulation is composed of a white or substantially colorless deodorizing agent, a binder resin and a liquid medium. The deodorizing agent may preferably be composed of 10-90 parts by weight of a zinc compound and 90-10 parts by weight of an aliphatic polycarboxylic acid, aromatic polycarboxylic acid, acidic polymer or a sulfate of aluminum, or a salt thereof. A deodorizing sheet can be obtained by coating and/or impregnating a base sheet with the deodorizing coating formulation and then drying the resulting base sheet. The deodorizing sheet can shield a flavor or odor from external flavors or odors while maintaining air permeability, it is suitable for wrapping foods having strong flavors or odors.

Growing community of inventors

Tokyo, Japan

Akira Hoshino