Kokusai Electric Corporation

Akira Horii

Tomoshi Taniyama

Takayuki Nakada

Daigi Kamimura

Kenji Shirako

Hironori Shimada

Norihiro Yamashima

Akinori Tanaka

Tatsuya Nishino

There is provided a technique capable of reducing a corrosion of a furnace opening shutter. According to one aspect thereof, a substrate processing apparatus includes: a process vessel provided with an opening and a first sealing surface around the opening; and a furnace opening shutter provided with a second sealing surface facing the first sealing surface, and capable of closing the opening. The furnace opening shutter includes: a protective cover provided corresponding to an inner surface of the furnace opening shutter, facing the process vessel and greater than the opening; and a lid provided corresponding to an outer surface of the furnace opening shutter and supporting the protective cover. The second sealing surface is configured by an outer peripheral portion of the protective cover and the lid, and a purge gas is supplied to a gap between the first sealing surface and the second sealing surface.

Substrate processing apparatus, furnace opening assembly, substrate processing method, method of manufacturing semiconductor device and non-transitory tangible medium

Even when two processing furnaces are included, space can be saved by removing needed equipment. Included are: first and second furnaces that process a substrate; a heat exchanger that cools a refrigerant discharged from the first and second furnaces; an exhaust blower that sucks the refrigerant discharged from the heat exchanger and sends out the refrigerant to a downstream side; first and second flow paths that connect the first and second furnaces, the heat exchanger, and the exhaust blower to each other such that the refrigerant can flow therethrough; first and second dampers having variable opening degrees disposed upstream from the heat exchanger in the first and second flow paths, respectively; and a controller that controls heating and cooling of the first and second furnaces. The first and second flow paths merge together in at least a part of each of the first and second flow paths.

Substrate processing apparatus, method of processing substrate, method of manufacturing semiconductor device and recording medium

There is provided a technique that includes: a first processing module including a first process container in which at least one substrate is processed, a first utility system including a first supply system which supplies a first processing gas into the first process container and a surface of the first utility system is connected or arranged close to the first processing module; and a first vacuum pump arranged at the same level as a first exhaust port of the first process container. The first vacuum pump exhausts an inside of the first process container and includes a first intake port formed laterally at a position substantially facing the first exhaust port of the first process container. A first exhaust pipe configured to substantially linearly bring the first exhaust port into fluid communication with the first intake port and including a first valve installed in a flow path.

Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

There is provided a technique that includes: a first processing module including a first process container in which at least one substrate is processed and a substrate loading port installed at a front side of the first processing module; a first utility system including a first supply system configured to supply a first processing gas into the first process container, a surface of the first utility system is connected or arranged close to a rear surface of the first processing module; and a first vacuum-exhauster arranged behind the first processing module and configured to exhaust an inside of the first process container, wherein the first vacuum-exhauster includes an outer side surface configured such that the outer side surface does not protrude more outward than an outer side surface of the first utility system.

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Toyama, Japan

Akira Horii