Soko Kagaku Co., Ltd.

Nec Corporation

Asahi Glass Company, Limited

Osaka Gas Company Limited

Agc Inc.

Nikkiso Company Limited

Fuji Xerox Co., Ltd.

Liquid Gas Co., Ltd.

Other

Nippon Electric Co., Ltd.

Soko Kagau Co., Ltd.

Uv Craftory Co., Ltd.

Suzuki Yushi Industrial Co., Ltd.

Akira Hirano

Yosuke Nagasawa

Masamichi Ippommatsu

Cyril Pernot

Masashi Nishigaki

Tsuyoshi Tsurutani

Ko Aosaki

Katsumi Nukada

Wataru Yamada

Takatsugu Doi

Masamichi Ipponmatsu

Yuji Ikeda

Tetsuhiko Inazu

Hisao Ohnishi

Tsuyoshi Nakajima

Hitoshi Takimoto

Minoru Suzuki

Masahide Tsujishita

Eriko Tsuruoka

Eiichi Ando

Koji Utsugi

Hiroyuki Endoh

Satoshi Kamiyama

Shigefusa Chichibu

Koichi Osada

Yuta Furusawa

Yoshihiko Sakane

Kazunobu Kojima

Kiho Yamada

Shoko Nagai

Yuki Suehara

Masahiro Iwasaki

Satoru Toguchi

Naoyasu Ikeda

Isamu Akasaki

Ryota Nakamura

Hiroshi Amano

Toshio Koga

Shunsuke Sadakane

Kenji Ishizeki

Junichi Ebisawa

Hiroshi Tada

Yasuo Hayashi

Yasuhiro Sanada

Satoshi Takeda

Hirokazu Sasaki

Naoki Morishima

Shinya Shibata

Hisashi Nishiyama

Shinya Ohmura

Hisakazu Tsuchiya

Myunghee Kim

Michiko Kaneda

A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element structure part with an n-type layer, an active layer, and a p-type layer stacked vertically, which are made of AlGaN-based semiconductors with wurtzite structure. The n-type layer has an n-type AlGaN-based semiconductor, the active layer has well layers including an AlGaN based semiconductor, and the p-type layer has a p-type AlGaN-based semiconductor. Each semiconductor layer in the n-type and the active layers is an epitaxially grown layer having a surface on which multi-step terraces parallel to the (0001) plane are formed. The n-type layer has first Ga-rich regions which include n-type AlGaN regions in which an AlGaN composition ratio is an integer ratio of AlGaN, and each extending direction of the stratiform regions is inclined with respect to the upper surface of the n-type layer.

Nitride semiconductor ultraviolet light-emitting element

A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element with n-type, active, and p-type layers stacked vertically and made of AlGaN-based wurtzite structured semiconductors. The active layer has a quantum-well structure and each layer is epitaxially grown having a surface on which multi-step terraces parallel to the (0001) plane are formed. The n-type layer has a stratiform regions with locally lower AlN mole fraction which is inclined with respect to an upper surface of the n-type layer. The p-type layer has a lowermost electron blocking layer and an uppermost contact layer. Each semiconductor layer in the active layer and the electron blocking layer have inclined regions with respect to the (0001) plane connecting adjacent terraces of the multi-step terraces, and terrace regions other than inclined regions. An AlN mole fraction of the terrace regions in the electron blocking layer is between 69% and 89%, inclusive.

Nitride semiconductor ultraviolet light emitting element

A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element structure part with an n-type layer, an active layer, and a p-type layer stacked vertically, which are made of AlGaN-based semiconductors with wurtzite structure. The n-type layer has an n-type AlGaN-based semiconductor, the active layer has well layers including an AlGaN based semiconductor, and the p-type layer has a p-type AlGaN-based semiconductor. Each semiconductor layer in the n-type and the active layers is an epitaxially grown layer having a surface on which multi-step terraces parallel to the (0001) plane are formed. The n-type layer has first Ga-rich regions which include n-type AlGaN regions in which an AlGaN composition ratio is an integer ratio of AlGaN. The well layer includes a second Ga-rich region, which includes an AlGaN region in which an AlGaN composition ratio is an integer ratio of AlGaN.

Nitride semiconductor ultraviolet light-emitting element and production method therefor

A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element structure part with an n-type layer, an active layer, and a p-type layer stacked vertically, which are made of AlGaN-based semiconductors with wurtzite structure. The n-type layer has an n-type AlGaN-based semiconductor, the active layer has well layers including an AlGaN based semiconductor, and the p-type layer has a p-type AlGaN-based semiconductor. Each semiconductor layer in the n-type and the active layers is an epitaxially grown layer having a surface on which multi-step terraces parallel to the (0001) plane are formed. The n-type layer has first Ga-rich regions which include n-type AlGaN regions in which an AlGaN composition ratio is an integer ratio of AlGaN. The well layer includes a second Ga-rich region, which includes an AlGaN region in which an AlGaN composition ratio is an integer ratio of AlGaNor AlGaN.

Nitride semiconductor ultraviolet light-emitting element and manufacturing method thereof

Glass for a vehicle includes a glass plate; a test-region A demarcated in the glass plate, the test-region A being specified in JIS R3212; a shielding layer provided more outwardly than the test-region A in a plan view; an information transmission/reception region demarcated within an opening portion provided in the shielding layer, and through which a device mounted in the vehicle transmits/receives information; and an infrared reflective layer positioned peripheral to the information transmission/reception region in a plan view, the infrared reflective layer having a portion that overlaps with the shielding layer in a plan view, wherein a solar direct transmittance of the test-region A is 60% or less and a solar direct reflectance of a region in which the infrared reflective layer is provided peripheral to the information transmission/reception region is greater than a solar direct reflectance of the test-region A by at least 5%.

Glass and laminated glass

To improve a wall plug efficiency in a nitride semiconductor light-emitting element for extracting ultraviolet light emitted from an active layer toward an n-type nitride semiconductor layer side to outside of the element. In the n-type AlGaN-based semiconductor layerconstituting the nitride semiconductor light-emitting element, a plurality of thin film-like Ga-rich layers that is a part of the n-type layerhaving a locally high Ga composition ratio exists spaced apart from each other in a vertical direction that is orthogonal to the upper surface of the n-type layer, an extending direction of at least a part of the plurality of Ga-rich layers on a first plane parallel to the vertical direction is inclined with respect to an intersection line between the upper surface of the n-type layer and the first plane, the plurality of Ga-rich layers exists in stripes on the second plane parallel to the upper surface of the n-type layerin an upper layer region having a thickness of 100 nm or less at lower side from the upper surface of the n-type layer, AlN molar fractions of the Ga-rich layersare greater than AlN molar fraction of a well layerin an active layerconstituting the light-emitting element

A light-emitting devicecomprises a base, a nitride semiconductor light-emitting elementflip-chip mounted on the base, and an amorphous fluororesin sealing the nitride semiconductor light-emitting element. The light-emitting devicecomprises a deformation-prevention layerfor preventing a shape change of an amorphous fluororesin by heat treatment after shipment of the light-emitting device, and the deformation-prevention layeris formed of a layer in which a thermosetting resin or an ultraviolet curing resin is cured, and the cured layer directly covers the surface of the amorphous fluororesin.

Light-emitting device

The nitride semiconductor light-emitting element comprises a light-emitting element structure portion having a plurality of nitride semiconductor layers including at least an n-type layer, an active layer and a p-type layer. The active layer has a quantum well structure comprising at least one well layer composed of a GaN-based semiconductor. In the well layer, the shortest distance between a first surface on the n-type layer side and a second surface on the p-type layer side varies in an orthogonal plane to the layering direction of the nitride semiconductor layers, and the peak emission wavelength of light emitted from the light-emitting element structure portion is shorter than 354 nm.

Nitride semiconductor light-emitting element

The ultraviolet light-emitting device includes a base, a nitride semiconductor ultraviolet light-emitting element flip-chip mounted on the base, and a lens for sealing a nitride semiconductor ultraviolet light-emitting element to focus or diffuse light emitted from the nitride semiconductor ultraviolet light-emitting device. The lens is composed of an amorphous fluororesin in which a structural unit of a polymer or copolymer has a fluorine-containing aliphatic cyclic structure and a terminal functional group is a perfluoroalkyl group, and a density of the amorphous fluororesin is higher than 2.11 g/cm.

Ultraviolet light-emitting device, method for manufacturing ultraviolet light-emitting device and method for manufacturing ultraviolet light-emitting module

A template includes a sapphire substrate with a (0001) plane or a plane inclined by a predetermined angle with respect to the (0001) plane as a main surface, and an AlN layer composed of AlN crystals having an epitaxial crystal orientation relationship with the main surface directly formed on the main surface of the sapphire substrate. In the template, an average particle diameter of the AlN crystals of the AlN layer at a thickness of 20 nm from the main surface is 100 nm or less.

Template, nitride semiconductor ultraviolet light-emitting element, and method of manufacturing template

A manufacturing method of a nitride semiconductor ultraviolet light-emitting element having a peak emission wavelength of 285 nm or shorter comprises a first step of forming an n-type semiconductor layer composed of an n-type AlGaN-based semiconductor (1&#x2265;X&#x2265;0.5) on an upper surface of an underlying portion including a sapphire substrate, a second step of forming, above the n-type semiconductor layer, an active layer that includes a light-emitting layer composed of an AlGaN-based semiconductor (X&#x3e;Y&#x3e;0) and that is composed of an AlGaN-based semiconductor as a whole, and a third step of forming a p-type semiconductor layer composed of a p-type AlGaN-based semiconductor (1&#x2265;Z&#x3e;Y) above the active layer. In the manufacturing method, a growth temperature at the second step is higher than 1200&#xb0; C. and equal to or higher than a growth temperature at the first step.

Manufacturing method of nitride semiconductor ultraviolet light emitting element, and nitride semiconductor ultraviolet light emitting element

A nitride semiconductor ultraviolet light-emitting elementcomprises a sapphire substrateand an element structure partformed on a main surfaceof the substrate. In the substrate, in a first portionextending from the main surfaceby a first distance, a sectional area of a cross section parallel to the main surfacecontinuously increases with distance from the main surface, and in a second portionextending from a side opposite to the main surfaceby a second distance, a sectional area of a cross section parallel to the main surfacecontinuously increases with distance from the side opposite to the main surface. The sum of the first distance and the second distance is equal to or less than the thickness of the substrate

Method for manufacturing nitride semiconductor ultraviolet light-emitting element and nitride semiconductor ultraviolet light-emitting element

To prevent degradation of electrical characteristics caused by a resin filled between electrodes in an ultraviolet light-emitting operation, the present invention provides a basethat comprises an insulating base materialand two or more metal filmsandthat are formed on one side of the insulating base materialand electrically separated from each other. The two or more metal films are formed to include an upper surface and a side wall surface that are covered by gold or a platinum group metal, to be capable of mounting thereon one or more nitride semiconductor light-emitting elements and the like, and to have, as a whole, a predetermined planar view shape including two or more electrode pads. On the one side of the base material, along a boundary line between an exposed surface of the base materialthat is not covered by the metal filmand a side wall surface of the metal film, at least a first part of the exposed surface of the base materialcontinuous with the boundary line that is sandwiched between two adjacent electrode pads and the side wall surfaces of the metal filmsandthat oppose to each other with the first part interposed therebetween are covered by a fluororesin film, and a part of an upper surface of the metal filmthat composes at least the electrode pad is not covered by the fluororesin film

Nitride semiconductor light-emitting element base and manufacturing method thereof

A nitride semiconductor light emitting element comprises a sapphire substrate, and a light emitting element structure portion that has a plurality of nitride semiconductor layers formed on the sapphire substrate. The nitride semiconductor light emitting element is a back-surface-emitting type nitride semiconductor light emitting element that outputs light from the light emitting element structure portion to an outside of the element through the sapphire substrate. The nitride semiconductor light emitting element is divided into a chip whose planarly-viewed shape is a square or a rectangle. A thickness of the sapphire substrate is 0.45 to 1 times an average length of sides of the planarly-viewed shape of the chip.

Nitride semiconductor light emitting element

Growing community of inventors

Aichi, Japan

Akira Hirano