Shin-etsu Chemical Co., Ltd.

Fujitsu Corporation

Shin-estu Chemical Co., Ltd.

The Foundation: the Research Institute for Special Inorganic Materials

Shin-etsu Chemical Ltd.

Akira Hayashida

Minoru Takamizawa

Yoshihumi Takeda

Ken Yahata

Yasuyoshi Komoto

Hiromi Ohsaki

Toshinobu Ishihara

Shigeru Mori

Yasuyuki Takiguchi

Eiichi Tabei

Taishi Kobayashi

Nobuaki Urasato

Motoo Fukushima

Motoyuki Yamada

Hiroshi Miyoshi

Hitoshi Arai

Yoshinori Hida

Mitsuo Umemura

Tatsuhiko Hongu

Michio Aizawa

Tsutomu Takeno

Masato Kanari

Jiyunitirow Maruta

Takahiro Iizuka

Kazutoshi Numanami

Akira Yamamoto

Hiroshi Yoshioka

Masaaki Yamaya

Yoshio Hasegawa

Kenichi Taguchi

Morinobu Endo

Katsuhiro Uehara

Morinobu Endou

Yoshifumi Takeda

Nichiro Suzuki

Takasi Toide

An information processing device includes a device, a management device that is connected to the device via a first transmission route and configured to acquire information regarding the device via the first transmission route, and a processing device that is connected to the device via a second transmission route, connected to the management device via a third transmission route, and configured to initialize the device and acquire the information from the management device via the third transmission route.

Information processing device and information processing method

An information processing apparatus having a verification capability of a configuration change. The information processing apparatus includes: a configuration storage unit to store information on components having been connected to the information processing apparatus as reference configuration information; a detecting unit to detect configuration information on components being connected to the information processing apparatus in booting; a comparing unit to compare, detected configuration information and the reference configuration information when the information processing apparatus is booted; a boot control unit to terminate booting of the information processing apparatus when an unequal comparison occurs; a monitoring unit to monitor, after the information processing apparatus is booted, a configuration change of the information processing apparatus in operation; and a dynamic update unit to update, when the configuration change of the information processing apparatus in operation is recognized, the reference configuration information with configuration information of the configuration-changed information processing apparatus.

Information processing apparatus with secure boot capability capable of verification of configuration change

Described is an adhesive containing a polycarbodiimide resin having repeating units represented by the following formula:

Polycarbodiimide resin-containing adhesive and flexible printed circuit

The method for preparing a crosslinked polycarbodiimide according to the present invention comprises reacting a polydicarbodiimide compound with a compound, which has in a molecule thereof two or more hydroxy or mercapto groups, in the presence of an alcoholate of an alkali metal or of an alkaline earth metal. The crosslinked polycarbodiimide obtained according to the method is excellent in heat resistance and mechanical properties.

Method for preparing crosslinked polycarbodiimides

A hydroxy- or mercapto-bearing organic compound is caused to react with a polycarbodiimide compound in the presence of an alcoholate of an alkali metal or of an alkaline earth metal. The carbodiimide linkage in the polymer which results from the above-described reaction is crosslinked.

Polycarbodiimide derivatives and method for preparing the same

A polysilane composition including a polysilane and a plasticizer can be coated as a thin film having improved mechanical strength and a high photo decomposition rate. A polysilane composition including a polysilane and an ester can be coated as a thin film which is exposed to UV and readily dyed to form a dyed polysilane film.

Polysilane compositions

A polycarbodiimide compound is reacted with an organic compound having at least two amino groups in the molecule. A polycarbodiimide compound is reacted with an amine compound having a silicon atom in the molecule. The carbodiimide bonds remained in the crosslinked material are further crosslinked. The crosslinked material is further heated/calcined to obtain an inorganic material having high heat resistance and strong toughness.

Polycarbodiimide derivative and process for producing the same

This invention provides a process wherein a stable solution of polycarbodiimide with a number-average molecular-weight of 5,000 to 60,000 can be very easily prepared by using an organic diisocyanate (e.g., 2,4-tolylene diisocyanate or 2,6-tolylene diisocyanate) as starting material, a cyclic phosphine oxide as catalyst and a chlorinated aromatic compound as solvent and by controlling certain reaction conditions within the reaction temperature range of 110.degree. to 150.degree. C.

Process for the preparation of a high-molecular-weight polycarbodiimide

This invention provides a process for the preparation of a polycarbodiimide solution wherein the polycarbodiimide is synthesized by heating an organic diisocyanate (e.g., 2,4-tolylene diisocyanate or 2,6-tolylene diisocyanate) in the presence of a carbodiimidation catlayst characterized in that a non-chlorinated aromatic hydrocarbon is used as the solvent and the resulting polycarbodiimide has a number average molecular weight from about 3,000 to about 10,000; wherein the synthesis is performed in the temperature range of from about 100.degree. to about 120.degree. C.

Process for the preparation of a polycarbodiimide solution

In a process for preparing a polysilane from a diorganodihalosilane and an alkali metal, a low molecular weight polysilane results from the process as a by-product. The low molecular weight polysilane is further reacted with an alkali metal for conversion into a high molecular weight polysilane.

Preparation of polysilanes

A polysilane is blended with a porphyrin or a metal complex thereof. The polysilane composition may further contain a plasticizer. The porphyrin is effective for suppressing photolysis of polysilane.

A hafnium-containing silazane polymer is obtained through a polymerization reaction of which the reactants are

Method for manufacturing a hafnium-containing silazane polymer and a

Polysilanes are synthesized by reacting dihalosilanes in the presence of alkali metal particles while using copper powder, cuprous oxide, cupric oxide, or an organic copper compound as a catalyst. There are obtained high molecular weight polysilanes in high yields.

An organic silazane polymer is prepared by reacting ammonia gas with a mixture of a trihalosilane and a monohalosilane, for example, methyltrichlorosilane and trimethylchlorosilane in an organic solvent to form a silazane compound, and heating the silazane compound at 200 to 350.degree. C. for polymerization. By melting, shaping, infusibilizing, and firing the silazane polymer, there is obtained a ceramic material.

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Higashimurayama, Japan

Akira Hayashida