Mitsubishi Electric Corporation

Akira Goto

Rei Yoneyama

Mariko Ono

Yoshitaka Kimura

Akihiko Yamashita

Ryo Goto

Takehiro Araki

Takami Otsuki

Taichi Obara

Nobuchika Aoki

Masatake Harada

Takayuki Ushio

Yoshihisa Oguri

Jyunya Kanazawa

Mariko Ohara

A semiconductor device includes a case enclosing a region filled with a sealing material. The case is made of resin. An electrode is fixed to the case. A section, which is a part of the electrode, is provided with a cutout that allows a part of the resin making the case to be exposed to the region.

Semiconductor device

A semiconductor apparatus includes: a case made of resin; an insert terminal including an external terminal portion embedded in the case and having a first terminal exposed from the case, and an internal terminal portion bent in a L shape with respect to a second terminal of the external terminal portion and having a first surface exposed from the case and an anchor part in close contact with the case; and a bonding wire bonded to the first surface of the internal terminal portion.

Semiconductor apparatus

A metal base substrate of the present invention includes a copper plate made of copper, a metal layer that is formed on the copper plate and is made of a metal different from the copper, an insulating resin sheet that is formed by bonding a sheet made of an insulating resin onto the metal layer, and a circuit pattern formed on the insulating resin sheet.

Metal base substrate, power module, and method for manufacturing metal base substrate

A semiconductor device includes an insulating substrate, a wiring pattern formed on the insulating substrate, a semiconductor chip secured to the wiring pattern, a junction terminal formed of the same material as the wiring pattern and electrically connected to the semiconductor chip, one end of the junction terminal being secured to the insulating substrate, the other end of the junction terminal extending upward away from the insulating substrate, and a control circuit for transmitting a control signal for the semiconductor chip, the control circuit being electrically connected to the junction terminal.

Semiconductor device and method of manufacture thereof

A semiconductor module includes a case, a semiconductor component provided in the case for switching a current, encapsulating resin provided in the case for covering the semiconductor component, a magnetic shield contacting the encapsulating resin and containing a magnetic material, and an embedded magnetic shield embedded in the case, the embedded magnetic shield containing a magnetic material.

Semiconductor module and power converter

A semiconductor device includes a metal substrate, semiconductor elements, wires, a control terminal, a main electrode terminal, a control substrate, a cover, a sealing resin, a case, and an insulator. The metal substrate includes a metal plate, an insulating layer formed on the top surface of the metal plate, and electrode patterns provided on the insulating layer. The semiconductor elements are secured to different ones of the electrode patterns by solder. The sealing resin seals the components within the case, such as the semiconductor elements. The insulator covers a portion of the surface of the insulating layer and at least a portion of the edge of each electrode pattern.

A package apparatus is for packaging a power semiconductor device that includes a substrate formed, a mold part molded on the substrate, and electrode terminals extended from the mold part to a side opposite from the substrate by a predetermined length; includes: a holding unit that has insertion slots and is to holding the power semiconductor device, the insertion slots each being an opening into which the power semiconductor device is insertable in a direction perpendicular to extending direction of the electrode, edges of the opening being formed to make contact with the mold part and the substrate; and a container box that contains the holding unit. The insertion slots are provided to the holding unit so that an interval between the insertion slots in an extending direction of the electrode terminals of the power semiconductor device inserted is greater than the extending length of the electrode terminals.

Growing community of inventors

Fukuoka, Japan

Akira Goto