Ebara Corporation

Tohoku University

Akira Fukuda

Yoshihiro Mochizuki

Hirokuni Hiyama

Kazuto Hirokawa

Manabu Tsujimura

Tetsuji Togawa

Kunihiko Sakurai

Katsunori Ichiki

Yutaka Wada

Seiji Samukawa

Yoichi Shiokawa

Kazuo Yamauchi

Akio Shibata

Akiko Miya

Tomoyuki Morita

Motohiko Nomi

Shunsuke Shimizu

A method dresses a polishing member with a diamond dresser having diamond particles arranged on a surface thereof. The method includes determining dressing conditions by performing a simulation of a distribution of a sliding distance of the diamond dresser on a surface of the polishing member, and dressing the polishing member with the diamond dresser under the determined dressing conditions. The simulation includes calculating the sliding distance corrected in accordance with a depth of the diamond particles thrusting into the polishing member.

Dressing method, method of determining dressing conditions, program for determining dressing conditions, and polishing apparatus

A polishing apparatus is provided for polishing wafers at a high yield rate even if roll-off exists. The polishing apparatus polishes a wafer by applying a pressure between a polishing member (polishing pad)and the wafer held by a holding member (top ring)and moving the polishing member relative to the wafer. The polishing apparatus includes a top ringfor holding the wafer, a pressure adjusting mechanism for adjusting a supporting pressure with which the wafer is supported on a supporting surface by a retainer ring, and a control unit for controlling the pressure adjusting mechanism to bring the supporting pressure to a desired pressure based on a roll off quantity of the wafer. The top ring comprises an air bagfor pressing the wafer against the polishing pad, a retainer ring which surrounds the wafer, and an air bag for pressing the retainer ring.

Polishing apparatus and polishing method

A polishing apparatus polishes wafers at a high yield rate even if roll-off exists. The polishing apparatus polishes a wafer by applying a pressure between a polishing member (polishing pad) and the wafer held by a holding member (top ring) and moving the polishing member relative to the wafer. The polishing apparatus includes a top ring for holding the wafer, a pressure adjusting mechanism for adjusting a supporting pressure with which the wafer is supported on a supporting surface by a retainer ring, and a control unit for controlling the pressure adjusting mechanism to bring the supporting pressure to a desired pressure based on a roll off quantity of the wafer. The top ring comprises an air bag for pressing the wafer against the polishing pad, a retainer ring which surrounds the wafer, and an air bag for pressing the retainer ring.

The present invention relates to a microchip apparatus using liquids. More specifically, the invention provides a liquid mixing apparatus comprising at least two microchannels for introducing liquids and a mixing microchannel that connects to the at least two liquid-introducing microchannels, wherein the liquids are transported from the respective liquid-introducing microchannels toward the mixing microchannel, the apparatus further comprising means for enhancing the mixing of the liquids that converge in the mixing microchannel. The invention also provides an electrophoretic apparatus and a microchip electrophoretic apparatus for denaturing gradient gel electrophoresis.

Microfluidic treatment method and device

A polishing method can automatically reset polishing conditions according to a state of a polishing member based on data on a polishing profile changing with time, thereby extending life of the polishing member and obtaining flatness of a polished surface with higher accuracy. The polishing method, includes steps of: independently applying a desired pressure by each of pressing portions of a top ring on a polishing object; estimating a polishing profile of the polishing object based on set pressure values, and calculating a recommended polishing pressure value so that a difference between the polishing profile of the polishing object after it is polished under certain polishing conditions and a desired polishing profile becomes smaller; and polishing the polishing object with the recommended polishing pressure value.

Method for estimating polishing profile or polishing amount, polishing method and polishing apparatus

A beam source has a plasma generating chamber, an antenna for generating plasma in the plasma generating chamber, a first electrode disposed in the plasma generating chamber, and a second electrode disposed in the plasma generating chamber. Both of the antenna and the second electrode face the first electrode. The beam source also includes a power supply for applying a voltage between the first electrode and the second electrode to extract particles from the plasma generated by the antenna. The beam source applies various kinds of beams having a large diameter, such as a positive ion beam, a negative ion beam, and a neutral particle beam, uniformly to a workpiece.

Beam source and beam processing apparatus

A beam source has a plasma generating chamber and a gas inlet port for introducing a gas into the plasma generating chamber. The beam source includes a plasma generator for generating positive-negative ion plasma containing positive ions at a density of at least 10ions/cmand negative ions from the gas. The beam source also includes a plasma potential adjustment electrode disposed in the plasma generating chamber and a grid electrode having a plurality of beam extraction holes formed therein. The beam extraction holes have a diameter of at least 0.5 mm. The beam source has a first power supply for applying a voltage of at most 500 V between the plasma potential adjustment electrode and the grid electrode.

Growing community of inventors

Fujisawa, Japan

Akira Fukuda