Yazaki Corporation

Akira Baba

Kazuhiro Murakami

Masayuki Saito

Hiroo Yabe

Takaaki Izawa

Yoshihiko Watanabe

Tomohiro Ikeda

Yukinari Naganishi

Satoshi Saito

Atsushi Nakata

Kazuyuki Oiwa

Takao Ota

Kazuo Sugimura

Kazuhiko Watanabe

Yoshikazu Nagashima

Kazuto Sugiyama

Takashi Odajima

Yoshihiko Mine

Kimio Tsuchiya

Masaaki Katsumata

Shigemi Endo

Keizo Yamamoto

Hirohito Habara

Satoshi Miwa

Hideaki Saitoh

Akihiro Koyama

A ground connection structure is a structure for collectively connecting, to a body of a vehicle, a plurality of grounding wires which are connected to respective electrical components installed in the vehicle. The ground connection structure includes: a connection box to which the plurality of grounding wires are connected; a grounding terminal part connected to the vehicle in an electrically conducting state; and an electrically conducting connection part having one end connected to the connection box and the other end connected to the grounding terminal part, the electrically conducting connection part connecting the connection box and the grounding terminal part in an electrically conducting manner. The electrically conducting connection part is made of a low-inductance material having low inductance.

Ground connection structure

There is provided a noise eliminating wire harness capable of enhancing a noise elimination performance. In the wire harness, an intermediate portion of a sheathof a wireis removed to expose a conductor, thereby forming a conductor connection portion, and a capacitoris directly connected to this conductor connection portion. The capacitoris directly connected to the conductor connection portionwithout using any wire serving as a branch wire. The capacitoris connected to the conductor connection portionin perpendicularly intersecting relation thereto. The capacitoris connected to the wirein such a condition that there is not provided any portion extending side by side with the wire

Noise eliminating wire harness

The cable-enrolling conductive thin-film sheetconsists of a conductive thin filmand an insulated cable. The conductive thin filmhas a conductor layerand first and second insulating layers. The first insulating layeris laminated on one face of the conductor layer, while the second insulating layeris laminated on the other face of the conductor layer. The insulated cablehas an electrically conductive core wireand an insulating sheathcovering the core wire. The insulated cablelaid on the first insulating layeris partially welded to the sheetby ultrasonic welding to obtain the cable-enrolling conductive thin-film sheet. The first insulating layeris welded to be secured to the sheath, and the conductor layeris mechanically connected to the core wireby the ultrasonic welding.

Cable-enrolling conductive thin-film sheet and manufacturing method thereof

A conductor-equipped conductive thin film sheet includes a conductive thin film sheet and a metallic piece . The conductive thin film sheet is composed of a conductive layer and an insulating layer . The metallic piece is superposed on the insulating layer and is partially bonded to the conductive layer by ultrasonic welding. In this configuration, when the sheet is wound around an electric wire, noise can be surely dissipated. A shield harness using the conductive thin film is also disclosed.

Conductive thin film sheet, shield harness and method of manufacturing the same

In a semiconductor relay system for supply a power source to a lamp load under the on/off control by a microcomputer using a semiconductor relay, a method of cutting off a circuit under an overcurrent, a first prescribed value is which is a current value higher than a rated load current for the load and a maximum current value supplied to the lamp load, and a second prescribed value is set which is a current value between said first prescribed value and said rated current value; the current value flowing through the lamp load is sampled at predetermined time intervals and comparing the current value thus sampled with the second prescribed value; and when a higher current than said first prescribed value flows through the lamp load, the current supplied to the lamp load is controlled within a prescribed range between said first prescribed value and said second prescribed value, and when the sampled current value higher that said second prescribed value is counted by a prescribed number of times, the sampled current is decided as an overcurrent thereby cutting off the semiconductor relay to stop the current supply to said lamp load.

Method of cutting off circuit under overcurrent, circuit cutting-off device under overcurrent, and method of protecting semiconductor relay system

A flat shield harness includes a flat harness including a plurality of first conductive cores arranged in parallel and an insulating cladding which clads the first conductive cores; a thin film sheet having a thin film conductive layer; and an electric wire including a second conductive core and a second cladding which clads the second core. The thin film sheet is wound around the outer periphery of the flat harness with its ends superposed in a width direction of the flat harness, the electric wire is superposed on the ends, and the conductive layer at the ends of the thin film sheet at the ends is bonded to the second core. In this configuration, the flat shield harness can surely dissipate externally the noise which is about to invade the core of an electric wire and suppress an increase in the cost in the wire harness to be assembled.

Flat shield harness and method for manufacturing the same

A fuseless DC-DC converter is provided to protect a circuit from overcurrent without involvement of a protective fuse. This is accomplished by providing a load circuit in the converter that includes a first overheat self-interruption-type semiconductor switch in series between a DC power supply and a load, and a reference circuit including a second overheat self-interruption-type semiconductor switch in parrallel with the first switch, and a reference resistor with one end connected to the source of the second switch, and the other end grounded. Also included is a comparator circuit that compares the source voltage of the first switch with a reference voltage applied to the source of the second switch, and thereby determines if the circuit has overcurrent. If overcurrent is detected, the results from the comparator circuit are used by a power supply controller to deactivate the semiconductor switch.

Fuseless dc-dc converter

A power supply control unit of this invention has a stabilized power source by a DC/DC converter and a Zener diode for supplying selectively plural voltages and supplies a power to a current vibration type shut-off function provided switching circuit. When power supply from a power source to a low voltage load is controlled via switching by a temperature sensor incorporated FET, a reference voltage having a voltage characteristic equivalent to that of a voltage between terminals of the temperature sensor incorporated FET to which a predetermined load is connected is generated by a reference FET and a resistor. A difference between a voltage between the terminals of the temperature sensor incorporated FET and the reference voltage is detected by a comparator. Then, the ON/OFF of the temperature sensor incorporated FET is controlled depending on a difference between the voltage between the terminals and the reference voltage by a driving circuit.

Power supply control unit and power supply control method

An improved electric power supply control device for supplying electric power to a load from a battery is described. The electric power supply control device is composed of a semiconductor switch connected between the electric power source and the load in order to controlling the power supply to the load, an excessive electric current detecting circuit for detecting an excessive electric current flowing through the load, a protection circuit connected to the semiconductor switch for turning off the semiconductor switch if the excessive electric current detecting circuit detects an excessive electric current, and a control circuit for disabling the protection circuit from turning off the semiconductor switch if the rate of increase of the electric current as flowing through the load is smaller than a predetermined rate.

Device and method for supplying electric power to a load

To turn on or off semiconductor switches based on the current-duration product of a current flowing through them, the device of the present invention detects an ambient temperature of the harness and, based on thus detected ambient temperature, corrects a detected current value to compare the current-duration product of thus corrected current value to the threshold data, so that if that product value equals or exceeds that threshold data value, the semiconductor switches are turned off, thus avoiding the affection due to the heat from the engines or the semiconductor switches to effectively prevent the harness from fuming.

Switching apparatus

First threshold corresponding to a large electric current capable of breaking a MOS-FET even if the electric current flows even in a short period is provided for a difference amplifying circuit and second threshold lower than the first threshold is stored in a memory. If a detected electric current value is higher than the first threshold or if a CPU determines that an electric current higher than the second threshold has flowed continuously for a period longer than a predetermined period, the semiconductor switch is switched off.

Intelligent power switch and switching apparatus

A switching device which can reduce effectively noise that is generated from a charge pump used to generate a drive voltage for driving a plurality of semiconductor switches. In the switching device, the charge pump used to generate the drive voltage for operating the plurality of the semiconductor switches is shared in common by these semiconductor switches, and the plurality of the semiconductor switches can be driven by the drive voltage that is generated by the single charge pump. Due to this structure, the noise to be generated by the charge pump can be controlled to a minimum and the noise interfering into the power line can be removed by a single noise remove circuit, which makes it possible to simplify the structure of the switching device.

Switching device

A photo SI thyristor driving circuit which has a good switching characteristic suitable to be used for a photo relay, and a protection circuit therefor for protecting a photo SI thyristor element from being broken down due to a thermal runaway. The photo SI thyristor driving circuit comprises a photo SI thyristor, a MOS transistor provided in a gate circuit of the photo SI thyristor to draw charges accumulated at the gate of the photo SI thyristor when the photo SI thyristor is turned off, and a plurality of photo electromotive force elements provided in a gate circuit of the MOS transistor to generate a photo current for biasing the MOS transistor. The protection circuit includes a snubber circuit connected between the anode and the cathode of the photo SI thyristor and a light emitting element for irradiating light to the photo electromotive elements in response to an output from the snubber circuit.

Photo SI thyristor driving circuit and its protection circuit

A LTQ (light triggered & quenched) static induction thyristor circuit of the present invention is to provide a LTQ static induction thyristor circuit obtaining an excellent dv/dt capability and operating ambient temperature characteristics, a large optically controllable current capability, and simple structure. A main static induction thyristor turns on when its gate receives an optically triggering pulse and causes a current to flow through a load from a positive terminal of a power supply. A photothyristor turns on when its gate receives an optically quenching pulse and causes the gate to a negative power supply voltage to turn off. At this point, a first resistor functions in such a manner as to hold turned on for a predetermined time period even after application of has been ended. By the flow of such current through a first resistor, the gate is biased to a negative voltage.

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Shizuoka, Japan

Akira Baba