Fujifilm Corporation

Akira Asano

Kensuke Morita

Makoto Muramatsu

Morio Yagihara

Hideaki Tsubaki

Katsuyuki Watanabe

Koji Wariishi

Toru Tsuchihashi

Koji Shirakawa

Yutaka Adegawa

Tadateru Yatsuo

A resist pattern forming method including in the following order, (1) a step of forming a film by using a negative chemical-amplification resist composition capable of undergoing negative conversion by a crosslinking reaction, (2) a step of exposing the film, and (4) a step of developing the exposed film by using a developer containing an organic solvent; a developer and a negative chemical-amplification resist composition used therefor; and a resist pattern formed by the pattern forming method.

Negative resist pattern forming method, developer and negative chemical-amplification resist composition used therefor, and resist pattern

A file is formed by coating a substrate with a film-forming composition including a compound having an alicyclic hydrocarbon structure and irradiating the coated composition with microwaves having a frequency of 5.8 GHz. An insulating film is formed by irradiating a film including a compound having a siloxane structure with microwave having a frequency of 5.8 GHz. These films possess excellent film properties such as dielectric constant and mechanical strength.

Film

An insulating film for semiconductor devices is obtained by curing, on a substrate, a high molecular compound obtained by polymerizing a cage-type silsesquioxane compound having two or more unsaturated groups as substituents and having a cyclic siloxane structure, wherein the structure of the cage-type silsesquioxane compound is not broken by curing, and the breakage of the cage structure can be detected by observing a peak at approximately 610 cmin Raman spectrum of the film after curing.

Insulating film

A film-forming composition comprising: a compound having a specific cage structure; a pore-forming agent; an adhesion promoter; and so on, an insulating film formed from the film-forming composition and an electronic device comprising the insulating film.

Film-forming composition, insulating material-forming composition, insulating film and electronic device

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Shizuoka, Japan

Akira Asano