Sharp Kabushiki Kaisha Corporation

Akira Ariyoshi

Toshiyuki Kawakami

Osamu Hamaoka

Hisayuki Shinohara

Kentaroh Tani

A semiconductor laser element is provided with: a substrate formed of a semiconductor; a semiconductor laminated film, which is laminated on the substrate, and which includes an active layer; a first electrode and a second electrode, which are provided on surfaces parallel to the active layer on the side where the semiconductor laminated film is formed on the substrate; and a facet protection film that is provided on both the facets, which are perpendicular to the active layer, and which face each other. In the semiconductor laser element, the facet is used as a fixing surface for the semiconductor laser element, said facet having the facet protection film formed thereon.

Semiconductor laser element and near-field light output device using same

Provided is a semiconductor laser chip improved more in heat dissipation performance. This semiconductor laser chip includes a substrate, which has a front surface and a rear surface, nitride semiconductor layers, which are formed on the front surface of the substrate, an optical waveguide (ridge portion), which is formed in the nitride semiconductor layers, an n-side electrode, which is formed on the rear surface of the substrate, and notched portions, which are formed in regions that include the substrate to run along the optical waveguide (ridge portion). The notched portions have notched surfaces on which a metal layer connected to the n-side electrode is formed.

Semiconductor laser chip, semiconductor laser device, and semiconductor laser chip manufacturing method

A semiconductor laser device has a semiconductor laser and a polarizing diffraction grating that is arranged ahead of the semiconductor laser. A reflected light from an optical recording medium is diffracted by the polarizing diffraction grating according to the polarization direction of the reflected light. The reflected light is thereby deviated from the direction toward the semiconductor laser to prevent the reflected light from returning to the semiconductor laser.

Semiconductor laser device and optical pickup device

A semiconductor laser device has a laser chip and a submount therefor. The submount has a fore end surface inclined in a direction of thickness of the submount. The laser chip is mounted on the submount in such a manner that an edge line of the fore end surface is perpendicular to a light emission axis of the laser chip, and that a light-emitting end surface of the laser chip projects from the edge line by a projection length in the direction of the light emission axis of the laser chip. Thereby, the laser chip receiving no return light is easily positioned with high accuracy.

Semiconductor laser device

A semiconductor laser chip has an emission point on a PN junction thereof. The emission point is located at a distance of 80 &mgr;m or less along the PN junction from a lateral side surface of the semiconductor laser chip.

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Nara, Japan

Akira Ariyoshi