Central Glass Company, Limited

Screen Holdings Co., Ltd.

Kokusai Electric Corporation

Akiou Kikuchi

Isamu Mori

Tomonori Umezaki

Akifumi Yao

Satoru Okamoto

Yasuo Hibino

Masanori Watari

Kenji Kameda

Kunihiro Yamauchi

Nobuyuki Tokunaga

Yuta Takeda

Masahiro Kimura

Manabu Okutani

Yasutoshi Tsubota

Hiroyuki Oomori

Masaya Nagato

Shin Hiyama

Tatsuo Miyazaki

Masaaki Yonekura

Masakiyo Nagatomo

Ryota Yoshimura

Hiroshi Horiuchi

Ryoma Nomura

Hikaru Kitayama

The present disclosure aims to provide a surface treatment method using a gas composition capable of removing a metal nitride at low temperatures without using plasma. The present disclosure relates to a surface treatment method including bringing a β-diketone and NOinto contact with a surface of a workpiece.

Surface treatment method, dry etching method, cleaning method, semiconductor device manufacturing method, and etching device

The metal material of the present disclosure includes: a metal base; and a film provided on a surface of the metal base and containing a fluorine-containing molybdenum compound, the fluorine-containing molybdenum compound being represented by the formula MoOFwherein x is a number from 0 to 2 and y is a number from 2 to 5.

Metal material, method of producing metal material, method of passivating semiconductor processing apparatus, method of manufacturing semiconductor device, and method of manufacturing filled container

A production method of tungsten hexafluoride according to one embodiment of the present invention includes: a first step of bringing tungsten having an oxide film into contact with a fluorine gas or inert gas containing 50 vol ppm to 50 vol % of hydrogen fluoride in a reactor, thereby removing the oxide film from the tungsten; and a second step of bringing the tungsten from which the oxide film has been removed by the first step into contact with a fluorine-containing gas to form tungsten hexafluoride.

Method for producing tungsten hexafluoride

There is provided a cleaning method improving cleaning efficiency in a process container after an oxygen-containing film forming process is having performed, including: (a) supplying at least a hydrogen fluoride gas into the process container; and (b) supplying an alcohol into the process container in a state where supply of the hydrogen fluoride gas into the process container is stopped, wherein (a) and (b) are continuously performed without providing an intermittent period therebetween.

Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus, and a non-transitory computer-readable recording medium

An etching fault is suppressed by use of an etching gas containing iodine heptafluoride. Provided is an attached substance removing method of removing an attached substance containing an iodine oxide attached to a component included in a chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas. Also provided is a dry etching method, including the steps of supplying an etching gas containing an iodine-containing gas into a chamber to perform etching on a surface of a substrate; and after the etching is performed on the surface of the substrate, removing an attached substance containing an iodine oxide attached to a component included in the chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas.

Method for removing adhering matter and dry etching method

The present invention is a sacrificial-film removal method of removing a sacrificial film from a surface of a substrate provided with a plurality of struts and the sacrificial film embedded between the plurality of struts, including: a wet etching step where the sacrificial film is removed to its halfway depth by supplying an etchant to the surface of the substrate; a rinse step where a residue adhering to the surface of the substrate is washed out by supplying a rinsing liquid to the surface of the substrate after the wet etching step; a drying step where a liquid component on the surface of the substrate is removed after the rinse step; and a dry etching step where the sacrificial film remaining on the surface of the substrate is removed by supplying an etching gas to the surface of the substrate after the drying step.

Sacrificial-film removal method and substrate processing device

Disclosed is a dry etching method for a laminated film in which at least one silicon layer and at least one silicon oxide layer are laminated together. The dry etching method includes generating a plasma gas from a dry etching agent and etching the laminated film with the plasma gas under the application of a bias voltage. The dry etching agent contains an unsaturated hydrofluorocarbon represented by the following formula: CHFwhere x is an integer of 1 to 5; y is an integer of 1 to 5; and x and y satisfy a relationship of x+y=4 or 6, and iodine heptafluoride. The volume of the iodine heptafluoride in the dry etching agent is 0.1 to 1.0 times the volume of the unsaturated hydrofluorocarbon in the dry etching agent.

Dry etching method

Disclosed is a gas generation devicethat has a mist trapequipped with a tubular housing, a gas inlet portfor allowing the gas generated from an electrolytic cell, a gas outlet portfor allowing the gas to flow out of the housing, a filler receiving sectionthat is positioned between the gas inlet portand the gas outlet portand receives a fillerfor adsorbing mist and microparticles, and a gas diffusion sectionthat is positioned between the gas inlet portand the filler receiving sectionand is for diffusing the gas generated from the electrolytic cellthrough the housing, that the gas outlet porthas a gas inlet tubeconnecting to the interior of the housing, and that a gas entry portionof the gas inlet tubeis arranged so as to be embedded in the fillerreceived in the filler receiving section

Gas generation device

An IF-derived iodine fluoride compound recovery method includes putting gas containing IFinto contact with a material to be fluorinated, thereby converting the IFinto IF; and cooling gas containing the IF, thereby trapping the IFas an IF-derived iodine fluoride compound. The recovered IFmay be reacted with fluorine to generate IF, which may be reused for a semiconductor production process.

[object Object]

A dry etching method according to the present invention is for etching a silicon layer as a processing target in a processing room, characterized by supplying an iodine heptafluoride-containing etching gas from a gas supply source at a supply pressure of 66 kPa to 0.5 MPa, evacuating the processing room to an internal pressure lower than the supply pressure of the etching gas and, while maintaining the etching gas at the supply pressure, introducing the etching gas into the evacuated processing room so as to etch the silicon layer by the etching gas. It is possible by this dry etching method to etch the silicon upon adiabatic expansion of the etching gas under mild pressure conditions, with no fear of equipment load and equipment cost increase, and achieve good uniformity of in-plane etching amount distribution.

Silicon dry etching method

Disclosed is an electrode for electrolytic synthesis of a fluorine compound, including: an electrode substrate having at least a surface thereof formed of a conductive carbon material; a conducting diamond layer formed on a part of the surface of the electrode substrate; and a metal fluoride-containing coating layer formed on an exposed part of the electrode substrate that is uncovered by the conducting diamond layer. It is possible for the electrolytic synthesis electrode to limit the growth of a graphite fluoride layer on the electrode surface, prevent decrease in effective electrolysis area and allow stable electrolysis in an electrolytic bath of a hydrogen fluoride-containing molten salt.

Method for synthesizing fluorine compound by electrolysis and electrode therefor

A dry etching agent according to the present invention contains (A) a fluorinated propyne represented by the chemical formula: CFC&#x2261;CX where X is H, F, Cl, Br, I, CH, CFHor CFH; and either of: (B) at least one kind of gas selected from the group consisting of O, O, CO, CO, COCland COF; (C) at least one kind of gas selected from the group consisting of F, NF, Cl, Br, Iand YFn where Y is Cl, Br or I; and n is an integer of 1 to 5; and (D) at least one kind of gas selected from the group consisting of CF, CHF, CF, CFH, CFH, CF, CFH, CClFH and CF. This dry etching agent has a small environmental load and a wide process window and can be applied for high-aspect-ratio processing without special operations such as substrate excitation.

Dry etching agent and dry etching method using the same

The present invention provide a water content measurement method for a hydrogen fluoride-containing compound represented by the general formula: XF.nHF (where X is either one of K, NH, Na and Li; and n is a rational number greater than 0), including the steps of causing thermal decomposition of the hydrogen fluoride-containing compound, thereby generating a thermal decomposition gas, and then, determining the water content of the hydrogen fluoride-containing compound by quantification of the water content of the thermal decomposition gas. By this measurement method, it is possible to accurately quantify the content of water in the hydrogen fluoride-containing compound XF.nHF.

Method and device for measuring water content in hydrogen fluoride-containing fluoride salt compounds

A pattern forming method is provided for forming a pattern of a multilayer film including insulative films and electrically conductive films stacked together and having a hole formed therein on a substrate with the electrically conductive film being selectively accurately indented from an inner peripheral surface of the hole. The pattern forming method includes the steps of: alternately stacking at least two insulative films and at least two polysilicon films on a substrate to form a multilayer film including the at least two insulative films and the at least two polysilicon films; forming a hole extending through the at least two insulative films and the at least two polysilicon films in the multilayer film; and selectively etching the polysilicon films from a side wall of the hole through isotropic etching by feeding into the hole an etching gas prepared by diluting fluorine-containing halogen gas with an inert gas.

Growing community of inventors

Ube, Japan

Akiou Kikuchi