Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Panasonic Holdings Corporation

Akio Ueta

Akihiko Ishibashi

Masaki Nobuoka

Naoya Ryoki

Yoshio Okayama

Yoshifumi Takasu

Isao Tashiro

Toshiya Yokogawa

Masaaki Yuri

Kentaro Miyano

Hiroshi Ohno

Ryou Kato

Takehiro Asahi

A RAMOsubstrate includes a single crystal represented by a formula of RAMO(in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected from a group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on one surface of the RAMOsubstrate, a satin-finish surface is provided on another surface. The satin-finish surface has surface roughness which is larger than that of the epitaxially-grown surface.

RAMO4 substrate and manufacturing method thereof

To provide a high-quality group III nitride semiconductor. A group III nitride semiconductor including an n-GaN layer composed of AlGaN (0&#x2264;x&#x3c;1), an InGaN layer disposed on the n-GaN layer and composed of InGaN, an n-AlGaN layer disposed on the InGaN layer and composed of n-type AlGaN (0&#x2264;y&#x3c;1), and a functional layer disposed on the n-AlGaN layer, wherein the concentration of Mg in the n-GaN layer is higher than the concentration of Mg in the n-AlGaN layer.

Group III nitride semiconductor with InGaN diffusion blocking layer

An object is to provide a high-quality ScAlMgOsingle crystal and a device. The ScAlMgOsingle crystal includes Sc, Al, Mg, and O, in which the atomic percentage ratio of Mg to Al, Mg/Al (atom %/atom %), as measured by an inductively coupled plasma emission spectrometric method, is more than 1 and less than 1.1.

ScAlMgO4 single crystal and device

An RAMOsubstrate including a single crystal represented by a general formula RAMO, wherein R represents one or more trivalent elements selected from a group consisting of Sc, In, Y, and lanthanide elements, A represents one or more trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd, in which a main plane of the RAMOsubstrate has an off-angle a tilted &#x3b8;a&#xb0; with respect to an M-axis direction from a C-plane and 0.05&#xb0;&#x2264;|&#x3b8;a|&#x2264;0.8&#xb0; is satisfied.

RAMOsubstrate and nitride semiconductor apparatus

A RAMOsubstrate is formed from single crystal represented by a formula of RAMO(in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected form a group consisting of Hg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on at least one surface of the RAMOsubstrate. The epitaxially-grown surface includes a plurality of cleavage surfaces which are regularly distributed, and are separated from each other.

A Group III nitride semiconductor containing: a RAMOsubstrate containing a single crystal represented by the general formula RAMO(wherein R represents one or a plurality of trivalent elements selected from the group consisting of Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or a plurality of divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd), and a Group III nitride crystal disposed above the RAMOsubstrate, having therebetween a dissimilar film that contains a material different from the RAMOsubstrate, and has plural openings.

Group III nitride semiconductor and method for producing same

On an RAMOsubstrate containing a single crystal represented by the general formula RAMO(wherein R represents one or a plurality of trivalent elements selected from a group of elements including: Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from a group of elements including: Fe(III), Ga, and Al, and M represents one or a plurality of divalent elements selected from a group of elements including: Mg, Mn, Fe(II), Co, Cu, Zn, and Cd), a buffer layer containing a nitride of In and a Group III element except for In is formed, and a Group III nitride crystal is formed on the buffer layer.

Group III nitride semiconductor, and method for producing same

The present invention improves luminous efficiency of a nitride semiconductor light-emitting element. In the nitride semiconductor light-emitting element, a non-polar or semi-polar AlInGaN layer having a thickness of t1 is interposed between the AlInGaN layer included in the p-type nitride semiconductor layer and the active layer (0&#x3c;x2&#x2266;1, 0&#x2266;y2&#x3c;1, 0&#x3c;z2&#x3c;1, x2+y2+z2=1). The AlInGaN layer has first and second interfaces located close to or in contact with the active layer and the AlInGaN layer, respectively. The AlInGaN layer has a hydrogen concentration distribution along its thickness direction in the inside thereof in such a manner that the hydrogen concentration is increased from the first interface to a thickness t2 (t2&#x3c;t1), reaches a peak at the thickness t2, and is decreased from the thickness t2 to the second interface. Magnesium contained in the AlInGaN layer is prevented from being diffused into the active layer to improve the luminous efficiency.

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Hyogo, Japan

Akio Ueta